# US 10,770,568 B2 · Method to remove III-V materials in high aspect ratio structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,568 B2 - Document ID: US10770568B2 - Status: Granted - Kind: B2 - Application number: 16/277,634 - Filed: 2019-02-15 - Published: 2019-06-13 - Granted: 2020-09-08 - Earliest claimed: 2017-01-20 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Xinyu Bao; Ying Zhang; Qingjun Zhou; YungChen Lin - Web page: https://patentgrep.com/patent/US10770568B2 ## CPC - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 62/115: {Dielectric isolations, e.g. air gaps} - H10D 84/0158: {the components including FinFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/834: {comprising FinFETs} - H10P 14/2925: {Surface structures} - H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations} - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Methods for forming semiconductor devices, such as FinFETs, are provided. In an embodiment, a fin structure processing method includes removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation. ## Claims ### Claim 1 A fin structure processing method, comprising: removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation, wherein a temperature of the substrate is between about 300° C. and about 800° C., and a pressure of the substrate processing environment is between about 1 Torr and about 100 Torr during at least a portion of the etching operation. ### Claim 2 (depends on 1) The method of claim 1, further comprising planarizing the Group III-V semiconductor material by a chemical mechanical polishing process. ### Claim 3 (depends on 1) The method of claim 1, wherein the substrate processing environment is an epitaxial deposition chamber. ### Claim 4 (depends on 3) The method of claim 3, wherein the etching gas is a chlorine containing gas. ### Claim 5 (depends on 4) The method of claim 4, wherein the chlorine containing gas is HCl. ### Claim 6 (depends on 1) The method of claim 1, further comprising forming a fill material on the surface of the remaining portion of the first fin, wherein the fill material is formed within a corresponding opening of the plurality of openings. ### Claim 7 (depends on 1) The method of claim 1, wherein the etching gas is delivered to the substrate processing environment at a flow rate of between about 1 sccm and about 500 sccm, for a 300 mm wafer. ### Claim 8 (depends on 1) The method of claim 1, wherein the etching gas is delivered to the substrate processing environment with a hydrogen containing gas, a carrier gas, or combinations thereof. ### Claim 9 (depends on 8) The method of claim 8, wherein the carrier gas is N2 or Ar. ### Claim 10 (depends on 9) The method of claim 9, wherein the carrier gas is delivered to the substrate processing environment at a flow rate of between about 1 slm and about 20 slm. ### Claim 11 (depends on 1) The method of claim 1, further comprising removing a species from an effluent stream flowing from the substrate processing environment by a chamber abatement apparatus. ### Claim 12 A fin structure processing method, comprising: removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; planarizing the Group III-V semiconductor material by a chemical mechanical polishing process; performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation, and wherein the etching qas is delivered to the substrate processing environment with a hydrogen containing gas, a carrier gas, or combinations thereof; and forming a fill material on the surface of the remaining portion of the first fin, wherein the fill material is formed within a corresponding opening of the plurality of openings. ### Claim 13 (depends on 12) The method of claim 12, wherein the etching gas is a chlorine containing gas. ### Claim 14 (depends on 13) The method of claim 13, wherein the chlorine containing gas is HCl. ### Claim 15 (depends on 12) The method of claim 12, wherein the features are formed in an epitaxial deposition chamber. ### Claim 16 (depends on 12) The method of claim 12, wherein the carrier gas is N2 or Ar. ### Claim 17 A fin structure processing method, comprising: removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; planarizing the Group III-V semiconductor material by a chemical mechanical polishing process; performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation and wherein the etching gas is HCl; delivering a hydrogen containing gas, a carrier gas, or a combination thereof, to the substrate processing environment; and forming a fill material on the surface of the remaining portion of the first fin, wherein the fill material is formed within a corresponding opening of the plurality of openings. ### Claim 18 (depends on 17) The method of claim 17, wherein the carrier gas is N2 or Ar. ### Claim 19 A fin structure processing method, comprising: removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation; and removing a species from an effluent stream flowing from the substrate processing environment by a chamber abatement apparatus. ### Claim 20 (depends on 19) The method of claim 19, wherein: the etching gas is a chlorine containing gas; the etching gas is delivered to the substrate processing environment with a hydrogen containing gas, N2, Ar, or a combination thereof; and the etching gas is delivered to the substrate processing environment at a flow rate of between about 1 sccm and about 500 sccm, for a 300 mm wafer.