# US 10,770,566 B2 · Unique gate cap and gate cap spacer structures for devices on integrated circuit products

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- Number: US 10,770,566 B2
- Document ID: US10770566B2
- Status: Granted
- Kind: B2
- Application number: 16/594,276
- Filed: 2019-10-07
- Published: 2020-02-13
- Granted: 2020-09-08
- Earliest claimed: 2018-08-13
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Julien Frougier; Ruilong Xie; Chanro Park; Kangguo Cheng
- Web page: https://patentgrep.com/patent/US10770566B2

## CPC

- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 64/015: {removing at least parts of gate spacers, e.g. disposable spacers}
- H10D 64/018: {Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates}
- H10D 64/025: {forming recessed gates, e.g. by using local oxidation}
- H10D 64/251: {Source or drain electrodes for field-effect devices}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 64/258: {characterised by the relative positions of the source or drain electrodes with respect to the gate electrode}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D 64/517: {characterised by the conducting layers}
- H10D 64/679: {comprising air gaps}
- H10W 10/021: {of air gaps}
- H10W 10/20: Air gaps
- H10W 20/069: {by forming self-aligned vias or self-aligned contact plugs}
- H10W 20/0693: {by forming self-aligned vias}
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/46: comprising air gaps
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A device is disclosed that includes an active layer, a gate structure positioned above a channel region of the active layer and a first sidewall spacer positioned adjacent the gate structure. The device also includes a gate cap layer positioned above the gate structure and an upper spacer that contacts sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.

## Claims

### Claim 1

A device, comprising:
an active layer;
a gate structure positioned above a channel region of the active layer;
a first sidewall spacer positioned adjacent the gate structure;
a gate cap layer positioned above the gate structure, the gate cap layer comprising an insulating material; and
an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.

### Claim 2 (depends on 1)

The device of claim 1, wherein the gate cap layer has a first width in a direction corresponding to a gate length direction of the device, as measured at the upper surface of the gate structure, and the gate structure has a second width in the gate length direction, as measured at the upper surface of the gate structure, wherein the first width is less than the second width.

### Claim 3 (depends on 1)

The device of claim 1, further comprising a gate contact structure that contacts an inner surface of the upper spacer and the upper surface of the gate structure.

### Claim 4 (depends on 1)

The device of claim 1, wherein the first sidewall spacer comprises an air gap defined therein.

### Claim 5 (depends on 1)

The device of claim 1, further comprising:
a source/drain region positioned adjacent the first sidewall spacer;
a lower source/drain contact structure contacting the source/drain region, and
a source/drain contact structure that contacts the outer surface of the upper spacer and the lower source/drain contact structure.

### Claim 6 (depends on 1)

The device of claim 1, wherein each of the first sidewall spacer, the gate cap layer and the upper spacer comprise different materials.

### Claim 7 (depends on 1)

The device of claim 1, wherein the upper spacer contacts the sidewall surfaces of the gate cap layer.

### Claim 8

A device, comprising:
an active layer;
a gate structure positioned above a channel region of the active layer, the gate structure having a first width in a direction corresponding to a gate length direction of the device, as measured at the upper surface of the gate structure;
a first sidewall spacer positioned adjacent the gate structure;
a gate cap layer positioned above the gate structure, the gate cap layer having a second width in a direction corresponding to the gate length direction of the device, as measured at the upper surface of the gate structure, wherein the second width is less than the first width; and
an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and a portion of the first sidewall spacer.

### Claim 9 (depends on 8)

The device of claim 8, further comprising a gate contact structure that contacts an inner surface of the upper spacer and the upper surface of the gate structure.

### Claim 10 (depends on 8)

The device of claim 8, wherein the first sidewall spacer comprises an air gap defined therein.

### Claim 11 (depends on 8)

The device of claim 8, further comprising:
a source/drain region positioned adjacent the first sidewall spacer;
a lower source/drain contact structure contacting the source/drain region, and
a source/drain contact structure that contacts the outer surface of the upper spacer and the lower source/drain contact structure.

### Claim 12 (depends on 8)

The device of claim 8, wherein a portion of the upper spacer contacts a sidewall surface of the gate cap layer and an inner surface of the first sidewall spacer.

### Claim 13 (depends on 8)

The device of claim 8, wherein each of the first sidewall spacer, the gate cap layer and the upper spacer comprise different materials.

### Claim 14

A device, comprising:
an active layer;
a gate structure positioned above a channel region of the active layer, the gate structure having a first width in a direction corresponding to a gate length direction of the device, as measured at the upper surface of the gate structure;
a first sidewall spacer positioned adjacent the gate structure;
a gate cap layer positioned above the gate structure, the gate cap layer having a second width in a direction corresponding to the gate length direction of the device, as measured at the upper surface of the gate structure, wherein the second width is less than the first width; and
an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.

### Claim 15 (depends on 14)

The device of claim 14, further comprising a gate contact structure that contacts an inner surface of the upper spacer and the upper surface of the gate structure.

### Claim 16 (depends on 15)

The device of claim 15, wherein each of the first sidewall spacer, the gate cap layer and the upper spacer comprise different materials.

### Claim 17 (depends on 14)

The device of claim 14, wherein the first sidewall spacer comprises an air gap defined therein.

### Claim 18 (depends on 14)

The device of claim 14, further comprising:
a source/drain region positioned adjacent the first sidewall spacer;
a lower source/drain contact structure contacting the source/drain region, and
a source/drain contact structure that contacts the outer surface of the upper spacer and the lower source/drain contact structure.

### Claim 19 (depends on 18)

The device of claim 18, wherein each of the first sidewall spacer, the gate cap layer and the upper spacer comprise different materials.

### Claim 20 (depends on 14)

The device of claim 14, wherein each of the first sidewall spacer, the gate cap layer and the upper spacer comprise different materials.