# US 10,770,553 B2 · Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device

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- Number: US 10,770,553 B2
- Document ID: US10770553B2
- Status: Granted
- Kind: B2
- Application number: 16/143,757
- Filed: 2018-09-27
- Published: 2019-04-04
- Granted: 2020-09-08
- Earliest claimed: 2017-09-29
- Assignees: Flosfia Inc.
- Applicants: Flosfia Inc.
- Inventors: Tokiyoshi Matsuda; Takashi Shinohe; Shingo Yagyu; Takuto Igawa
- Web page: https://patentgrep.com/patent/US10770553B2

## CPC

- H10D 62/82: Heterojunctions
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/40: Crystalline structures
- H10D 62/80: characterised by the materials
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/265: {using solutions}
- H10P 14/3234: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}
- H10P 14/3426: {Oxides}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10D 10/821: {Vertical heterojunction BJTs}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 62/86: being Group II-VI materials, e.g. ZnO
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

## Claims

### Claim 1

A layered structure, comprising:
a first semiconductor layer comprising as a major component an ε-phase oxide semiconductor crystal; and
a second semiconductor layer positioned on the first semiconductor layer and comprising as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

### Claim 2 (depends on 1)

The layered structure of claim 1, wherein
the ε-phase oxide semiconductor crystal comprised in the first semiconductor layer comprises gallium.

### Claim 3 (depends on 1)

The layered structure of claim 1, wherein
the ε-phase oxide semiconductor crystal comprised in the first semiconductor layer comprises ε-Ga2O3.

### Claim 4 (depends on 1)

The layered structure of claim 1, wherein
the ε-phase oxide semiconductor crystal comprised in the first semiconductor layer comprises a mixed crystal comprising ε-Ga2O3.

### Claim 5 (depends on 1)

The layered structure of claim 1, wherein
the oxide semiconductor crystal with the tetragonal crystal structure comprised in the second semiconductor layer comprises tin.

### Claim 6 (depends on 1)

The layered structure of claim 1, wherein
the oxide semiconductor crystal with the tetragonal crystal structure comprised in the second semiconductor layer comprises SnO2.

### Claim 7 (depends on 1)

The layered structure of claim 1, wherein
the oxide semiconductor crystal with the tetragonal crystal structure comprised in the second semiconductor layer comprises a mixed crystal comprising SnO2.

### Claim 8 (depends on 1)

The layered structure of claim 1, further comprising:
three or more layers comprising the first semiconductor layer, the second semiconductor layer, and a third layer positioned on the first semiconductor layer.

### Claim 9 (depends on 1)

The layered structure of claim 1, further comprising:
three or more layers comprising the first semiconductor layer, the second semiconductor layer, and a third layer positioned on the second semiconductor layer.

### Claim 10 (depends on 8)

The layered structure of claim 8, further comprising:
a heterojunction between two semiconductor layers selected from among the three or more layers.

### Claim 11 (depends on 8)

The layered structure of claim 8, wherein
the third layer is an electrically insulating layer.

### Claim 12

A semiconductor device, comprising:
a layered structure, comprising a first semiconductor layer that comprises an ε-phase oxide semiconductor crystal and a second semiconductor layer that is positioned on the first semiconductor layer and comprises an oxide semiconductor crystal with a tetragonal crystal structure; and
a heterojunction between the first semiconductor layer and the second semiconductor layer.

### Claim 13

A semiconductor device, comprising:
a layered structure, comprising a first semiconductor layer that comprises an ε-phase oxide semiconductor crystal and a second semiconductor layer that is positioned on the first semiconductor layer and comprises an oxide semiconductor crystal with a tetragonal crystal structure;
a first electrode electrically connected to the layered structure; and
a second electrode electrically connected to the layered structure.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device is a transistor.

### Claim 15 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device is a semiconductor memory.

### Claim 16 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device is a light-emitting device or an opto-electronic device.

### Claim 17 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device is a solar cell.

### Claim 18 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device is a power device.

### Claim 19 (depends on 13)

The semiconductor device of claim 13, wherein
the semiconductor device has a high-frequency characteristic.

### Claim 20

A system, comprising:
a circuit board; and
a semiconductor device, comprising a layered structure that comprises a first semiconductor layer comprising an ε-phase oxide semiconductor crystal, and a second semiconductor layer positioned on the first semiconductor layer and comprising an oxide semiconductor crystal with a tetragonal crystal structure, a first electrode electrically connected to the layered structure, and a second electrode electrically connected to the layered structure, the semiconductor device being electrically connected to the circuit board.