# US 10,770,506 B2 · Method for producing a light-emitting diode display and light-emitting diode display

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- Number: US 10,770,506 B2
- Document ID: US10770506B2
- Status: Granted
- Kind: B2
- Application number: 15/823,431
- Filed: 2017-11-27
- Published: 2018-03-29
- Granted: 2020-09-08
- Earliest claimed: 2012-10-04
- Assignees: OSRAM OLED GmbH
- Applicants: Osram Oled GmbH
- Inventors: Norwin Von Malm; Martin Mandl; Alexander F. Pfeuffer; Britta Goeoetz
- Web page: https://patentgrep.com/patent/US10770506B2

## CPC

- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10D 30/027: {of lateral single-gate IGFETs}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/8515: {not being in contact with the bodies}
- H10W 90/00: Package configurations
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

## Claims

### Claim 1

A light-emitting diode display having:
a carrier having a plurality of transistors, and
a plurality of individual, radiation-active islands,
wherein
each of the islands comprises an inorganic semiconductor layer sequence having at least one active zone,
a mean diameter of the islands, seen in a top view of the carrier, is between 50 nm and 20 μm inclusive,
a mean height of the inorganic semiconductor layer sequence of the islands is at least 1.5 μm,
the islands are electrically interconnected with the transistors, wherein each individual island is electrically conductively connected to precisely one transistor, the islands are electrically controllable individually via the transistors, and the individual islands form micro-pixels of the light-emitting display,
regions between neighboring islands are filled with a filling compound,
the filling compound is divided into a plurality of island-like sections, and
regions between neighboring island-like sections of the filling compound are provided with a reflective filling, which is a metallic filling so that the neighboring island-like sections are optically isolated from one another via the reflective filling.