# US 10,770,504 B2 · Wide spectrum optical sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,504 B2 - Document ID: US10770504B2 - Status: Granted - Kind: B2 - Application number: 16/207,622 - Filed: 2018-12-03 - Published: 2019-04-04 - Granted: 2020-09-08 - Earliest claimed: 2015-08-27 - Assignees: Artilux, Inc. - Applicants: Artilux, Inc. - Inventors: Yun-Chung Na; Szu-Lin Cheng; Shu-Lu Chen; Han-Din Liu; Hui-Wen Chen; Che-Fu Liang - Web page: https://patentgrep.com/patent/US10770504B2 ## CPC - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H02S 40/44: Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time (directly associated with the PV cell or integrated with the PV cell H10F77/67) - H10F 30/221: the potential barrier being a PN homojunction - H10F 30/223: the potential barrier being a PIN barrier - H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices} - H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors} - H10F 39/1847: {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 77/122: comprising only Group IV materials - H10F 77/147: {Shapes of bodies} - Y02E 10/50: Photovoltaic [PV] energy - Y02E 10/60: Thermal-PV hybrids - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level. ## Claims ### Claim 1 An optical sensor comprising: a semiconductor substrate; a first gate formed on the semiconductor substrate; a die supported by the semiconductor substrate; a first light absorption region formed in the die, wherein the first light absorption region is configured to: absorb first photons at a first wavelength range; and generate first photo-carriers from the absorbed first photons; a bonding layer between the semiconductor substrate and the die, wherein a part of the bonding layer is between the first gate and the die; a second light absorption region formed in the semiconductor substrate, wherein the second light absorption region is configured to: absorb second photons at a second wavelength range; and generate second photo-carriers from the absorbed second photons; and a first carrier-collection region formed in the semiconductor substrate, wherein the first carrier-collection region is configured to collect a portion of the first photo-carriers and has a polarity; and a second carrier-collection region formed in the semiconductor substrate, wherein the second carrier-collection region is configured to collect a portion of the second photo-carriers and has a polarity opposite to the polarity of the first carrier-collection region. ### Claim 2 (depends on 1) The optical sensor of claim 1, wherein the portion of the first photo-carriers collected by the first carrier-collection region are provided by the first light absorption region, the optical sensor further comprising: a first readout region coupled to a first readout circuitry and has a polarity, the first readout region configured to provide the portion of the first photo-carriers collected by the first carrier-collection region to the first readout circuitry; and a second readout region coupled to a second readout circuitry, wherein the second readout region has a polarity opposite to the polarity of the first readout region. ### Claim 3 (depends on 2) The optical sensor of claim 2, further comprising: a first control signal source coupled to the first gate, wherein a first control signal from the first control signal source controls carrier transport between the first carrier-collection region and the first readout region. ### Claim 4 (depends on 3) The optical sensor of claim 3, further comprising: a second gate formed on the semiconductor substrate, wherein: the second gate is coupled to a second control signal source; and a second control signal from the second control signal source controls carrier transport between the second carrier-collection region and the second readout region. ### Claim 5 (depends on 2) The optical sensor of claim 2, wherein the portion of the second photo-carriers are distinct from the portion of the first photo-carriers. ### Claim 6 (depends on 2) The optical sensor of claim 2, further comprising: a second gate formed on the semiconductor substrate, wherein: the second gate is coupled to a second control signal source; and a second control signal from the second control signal source controls carrier transport between the second carrier-collection region and the second readout region. ### Claim 7 (depends on 2) The optical sensor of claim 2, wherein the portion of the second photo-carriers collected by the second carrier-collection region are provided by the second light absorption region, and the second readout region configured to provide the portion of the second photo-carriers collected by the second carrier-collection region to the second readout circuitry. ### Claim 8 (depends on 2) The optical sensor of claim 2, wherein the first wavelength range is distinct from the second wavelength range. ### Claim 9 (depends on 1) The optical sensor of claim 1, wherein the first carrier-collection region is between the second carrier-collection region and the first light absorption region. ### Claim 10 An optical sensor comprising: a semiconductor substrate; a first gate formed on the semiconductor substrate; a die supported by the semiconductor substrate; a first light absorption region formed in the die, wherein the first light absorption region is configured to: absorb first photons at a first wavelength range; and generate first photo-carriers from the absorbed first photons; a bonding layer between the semiconductor substrate and the die, wherein a part of the bonding layer is between the first gate and the die; a second light absorption region formed in the semiconductor substrate, wherein the second light absorption region is configured to: absorb second photons at a second wavelength range; and generate second photo-carriers from the absorbed second photons; a first readout region coupled to a first readout circuitry, wherein the first readout region has a polarity; and a second readout region coupled to a second readout circuitry, wherein the second readout region has a polarity opposite to the polarity of the first readout region. ### Claim 11 (depends on 10) The optical sensor of claim 10, further comprising: a second gate formed on the semiconductor substrate, wherein a part of the bonding layer is between the second gate and the die. ### Claim 12 (depends on 10) The optical sensor of claim 10, wherein the first wavelength range is distinct from the second wavelength range. ### Claim 13 (depends on 10) The optical sensor of claim 10, wherein the second light absorption region and the first light absorption region overlap along a direction of an optical signal. ### Claim 14 An optical sensor comprising: a semiconductor substrate; a first gate formed on the semiconductor substrate; a die supported by the semiconductor substrate; a first light absorption region formed in the die, wherein the first light absorption region is configured to: absorb first photons at a first wavelength range; and generate first photo-carriers from the absorbed first photons; and a bonding layer between the semiconductor substrate and the die, wherein a part of the bonding layer is between the first gate and the die; a second light absorption region formed in the semiconductor substrate, wherein the second light absorption region is configured to: absorb second photons at a second wavelength range; and generate second photo-carriers from the absorbed second photons; a first carrier-collection region formed in the semiconductor substrate; and a second carrier-collection region formed in the semiconductor substrate, wherein the first carrier-collection region is between second carrier-collection region and the first light absorption region. ### Claim 15 (depends on 14) The optical sensor of claim 14, wherein a surface of the first light absorption region is flush with a surface of the die. ### Claim 16 (depends on 14) The optical sensor of claim 14, wherein the first light absorption region comprises a p-doped region, an n-doped region, and an intrinsic region formed between the p-doped region and the n-doped region. ### Claim 17 (depends on 14) The optical sensor of claim 14, wherein the first light absorption region comprises an intrinsic region comprising germanium. ### Claim 18 (depends on 14) The optical sensor of claim 14, wherein the optical sensor further comprises: a first readout region coupled to a first readout circuitry, the first readout region configured to provide a portion of the first photo-carriers collected by the first carrier-collection region to the first readout circuitry. ### Claim 19 (depends on 18) The optical sensor of claim 18, further comprising: a second readout region coupled to a second readout circuitry, the second readout region configured to provide the portion of the second photo-carriers collected by the second carrier-collection region to the second readout circuitry.