# US 10,770,500 B2 · Solid state imaging device for reducing dark current

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- Number: US 10,770,500 B2
- Document ID: US10770500B2
- Status: Granted
- Kind: B2
- Application number: 16/230,197
- Filed: 2018-12-21
- Published: 2019-05-16
- Granted: 2020-09-08
- Earliest claimed: 2007-10-11
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Itaru Oshiyama; Takashi Ando; Susumu Hiyama; Tetsuji Yamaguchi; Yuko Ohgishi; Harumi Ikeda
- Web page: https://patentgrep.com/patent/US10770500B2

## CPC

- H10F 39/811: {Interconnections}
- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10F 39/1515: {Optical shielding}
- H10F 39/156: {CCD or CID colour image sensors}
- H10F 39/182: {Colour image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8033: {Photosensitive area}
- H10F 39/805: {Coatings}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10F 39/806: {Optical elements or arrangements associated with the image sensors}
- H10F 39/8063: {Microlenses}
- H10F 39/8067: {Reflectors}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

## Claims

### Claim 1

A light sensing device, comprising:
a substrate including a semiconductor layer, the semiconductor layer comprising a light sensing section, a first surface, and a second surface opposite to the first surface, wherein the first surface is at a light incident side of the semiconductor layer;
a wiring layer on the second surface;
a first electrode extending from the first surface of the semiconductor layer through the second surface of the semiconductor layer and a surface of the wiring layer to a wiring line disposed in the wiring layer; and
at least three layers over the first surface, the at least three layers comprising a first layer, a second layer, and a third layer,
wherein the first layer and the third layer are insulating layers, and the second layer comprises a material selected from the group including hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, hafnium nitride, aluminum nitride, hafnium oxide nitride, and aluminum oxide nitride,
wherein the second layer is disposed between the first layer and third layer,
wherein the semiconductor layer includes at least a first photoelectric conversion region, a second photoelectric conversion region, and a pixel separating region extending from the first surface to the second surface,
wherein the pixel separating region is disposed between the first photoelectric conversion region and the second photoelectric conversion region, and
wherein at least one of the first layer, the second layer, and the third layer is disposed over the first photoelectric conversion region and the second photoelectric conversion region.

### Claim 2 (depends on 1)

The light sensing device of claim 1, wherein the first layer and the third layer are made of different materials.

### Claim 3 (depends on 1)

The light sensing device of claim 1, wherein the second layer is made of hafnium oxide.

### Claim 4 (depends on 1)

The light sensing device of claim 1, wherein the at least three layers are disposed over the semiconductor layer in the order of the first layer, the second layer, and the third layer from the first surface.

### Claim 5 (depends on 1)

The light sensing device of claim 1, wherein the first layer is made of a silicon oxide layer.

### Claim 6 (depends on 1)

The light sensing device of claim 1, wherein the third layer is made of a silicon oxide layer.

### Claim 7 (depends on 1)

The light sensing device of claim 1, further comprising:
a color filter and an on-chip micro lens over the third layer.

### Claim 8 (depends on 1)

The light sensing device of claim 1, further comprising:
a peripheral circuit section, wherein at least the first, second, and third layers are provided over the peripheral circuit section.

### Claim 9 (depends on 8)

The light sensing device of claim 8, further comprising:
a light-shielding layer over the third layer in the peripheral circuit section.

### Claim 10 (depends on 9)

The light sensing device of claim 9, wherein the light-shielding layer is provided over a portion of the light sensing section.

### Claim 11 (depends on 1)

The light sensing device of claim 1, wherein the second layer is formed by an atomic layer deposition.

### Claim 12 (depends on 5)

The light sensing device of claim 5, wherein the first layer is formed by an atomic layer deposition.

### Claim 13 (depends on 12)

The light sensing device of claim 12, wherein the first layer is simultaneously formed with the second layer by the atomic layer deposition.

### Claim 14 (depends on 1)

The light sensing device of claim 1, wherein a thickness of the second layer is 3 nm or more.

### Claim 15 (depends on 1)

The light sensing device of claim 1, wherein a thickness of the second layer is from 50 nm to 60 nm.

### Claim 16

A light sensing device, comprising:
a substrate including a semiconductor layer, the semiconductor layer comprising a light sensing section, a first surface, and a second surface opposite to the first surface, wherein the first surface is at a light incident side of the semiconductor layer;
a wiring layer on the second surface;
at least three layers over the first surface, the at least three layers comprising a first layer, a second layer, and a third layer; and
a first electrode extending from the first surface of the semiconductor layer to a wiring line disposed in the wiring layer,
wherein the first layer and the third layer are insulating layers, and the second layer comprises a material selected from the group including hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, hafnium nitride, aluminum nitride, hafnium oxide nitride, and aluminum oxide nitride,
wherein the second layer is disposed between the first layer and third layer,
wherein the semiconductor layer includes at least a first photoelectric conversion region, a second photoelectric conversion region, and a pixel separating region,
wherein the pixel separating region is disposed between the first photoelectric conversion region and the second photoelectric conversion region, and
wherein at least one of the first layer, the second layer, and the third layer is disposed over the first photoelectric conversion region and the second photoelectric conversion region.