# US 10,770,473 B2 · Vertical type semiconductor devices and methods of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,473 B2 - Document ID: US10770473B2 - Status: Granted - Kind: B2 - Application number: 16/122,037 - Filed: 2018-09-05 - Published: 2019-05-30 - Granted: 2020-09-08 - Earliest claimed: 2017-11-27 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Sung-Yun Lee; Jae-Hoon Jang; Jae-Duk Lee; Joon-Hee Lee; Young-Jin Jung - Web page: https://patentgrep.com/patent/US10770473B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 64/037: {comprising charge-trapping insulators} - H10P 50/691: {for Group IV materials or Group III-V materials} - H10W 20/098: {by filling between adjacent conductive parts} - H10B 43/10: characterised by the top-view layout - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit. ## Claims ### Claim 1 A vertical type semiconductor device, comprising: insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate; a channel structure on the substrate and penetrating through the insulation patterns; a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending towards the channel structure and parallel with the top surface of the substrate; and a second conductive pattern on the first conductive pattern in the gap and filling the slit, wherein a width at an entrance of the slit in the first direction is less than a width of an inner space of the slit in the first direction. ### Claim 2 (depends on 1) The vertical type semiconductor device of claim 1, wherein the first conductive pattern comprises a metal material. ### Claim 3 (depends on 1) The vertical type semiconductor device of claim 1, wherein the first conductive pattern comprises tungsten. ### Claim 4 (depends on 1) The vertical type semiconductor device of claim 1, wherein the second conductive pattern comprises titanium, titanium nitride, tantalum or tantalum nitride. ### Claim 5 (depends on 1) The vertical type semiconductor device of claim 1, further comprising a barrier pattern surrounding a top surface, a sidewall and a bottom surface of the first conductive pattern. ### Claim 6 (depends on 1) The vertical type semiconductor device of claim 1, wherein the gap is defined as a space between surfaces of the above and underlying insulation patterns adjacent to each other in the first direction and the channel structure, the first conductive pattern is along a top surface of the underlying insulation pattern, the channel structure and a bottom surface of the above insulation pattern, and the slit is between the first conductive patterns on the top surface of the underlying insulation pattern and the bottom surface of the above insulation pattern. ### Claim 7 (depends on 1) The vertical type semiconductor device of claim 1, wherein the slit is in a middle region of the gap in the first direction. ### Claim 8 (depends on 1) The vertical type semiconductor device of claim 1, wherein a gate structure including the first and second conductive patterns extends in a second direction parallel with the top surface of the substrate. ### Claim 9 (depends on 8) The vertical type semiconductor device of claim 8, wherein a plurality of the gate structures is arranged in a third direction perpendicular to the second direction and parallel with the top surface of the substrate, and a trench extends in the second direction between the gate structures and exposes the substrate. ### Claim 10 (depends on 9) The vertical type semiconductor device of claim 9, wherein the entrance of the slit adjacent to the trench is opened toward the trench. ### Claim 11 (depends on 10) The vertical type semiconductor device of claim 10, wherein the entrance of the slit has a width in the first direction less than other portions of the slit. ### Claim 12 (depends on 9) The vertical type semiconductor device of claim 9, further comprising: an insulation spacer on a sidewall of the trench to cover the second conductive pattern; and a common source line on the insulation spacer to fill the trench. ### Claim 13 (depends on 1) The vertical type semiconductor device of claim 1, wherein the first conductive pattern has a shape surrounding the channel structure when a middle region in the first direction of a gate structure is viewed in a plan. ### Claim 14 (depends on 1) The vertical type semiconductor device of claim 1, further comprising a semiconductor pattern between the substrate and the channel structure. ### Claim 15 A vertical type semiconductor device, comprising: insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, the insulation pattern extending a second direction parallel to the top surface of the substrate; channel structures on the substrate, each channel structure penetrating through the insulation patterns; and a gate structure in a gap between the insulation patterns adjacent to each other in the first direction and the channel structure, the gate structure extending in the second direction, the gate structure comprising: a first conductive pattern along a top surface and a bottom surface of the insulation patterns and the channel structure and having a slit in a surface thereof; and a second conductive pattern on the first conductive pattern to fill the slit and including a material different from the first conductive pattern, wherein a width at an entrance of the slit in the first direction is less than a width of an inner space of the slit in the first direction. ### Claim 16 (depends on 15) The vertical type semiconductor device of claim 15, wherein a plurality of the gate structures is arranged in a third direction perpendicular to the second direction and parallel with the top surface of the substrate, and a trench extends in the second direction between the gate structures and exposes the substrate. ### Claim 17 (depends on 15) The vertical type semiconductor device of claim 15, wherein an entrance of the slit adjacent to a trench is opened toward the trench. ### Claim 18 A vertical type semiconductor device, comprising: pattern structures including gate structures and insulation patterns alternately and repeatedly stacked on a substrate in a first direction perpendicular to a top surface of the substrate; channel structures penetrating through the insulation patterns; and a common source line between the pattern structures, extending in a second direction parallel with the top surface of the substrate and contacting the substrate, the gate structure comprising: a first conductive pattern having a slit parallel with the top surface of the substrate; and a second conductive pattern on the first conductive pattern filling the slit, wherein a width at an entrance of the slit in the first direction is less than a width of an inner space of the slit in the first direction. ### Claim 19 (depends on 18) The vertical type semiconductor device of claim 18, wherein the first conductive pattern comprises tungsten, and the second conductive pattern comprises titanium, titanium nitride, tantalum or tantalum nitride. ### Claim 20 (depends on 18) The vertical type semiconductor device of claim 18, wherein an entrance of the slit is opened toward the common source line.