# US 10,770,466 B2 · Semiconductor devices comprising digit line contacts and related systems

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- Number: US 10,770,466 B2
- Document ID: US10770466B2
- Status: Granted
- Kind: B2
- Application number: 16/258,296
- Filed: 2019-01-25
- Published: 2020-07-30
- Granted: 2020-09-08
- Earliest claimed: 2019-01-25
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Naoyoshi Kobayashi; Osamu Fujita; Katsumi Koge
- Web page: https://patentgrep.com/patent/US10770466B2

## CPC

- H10B 12/485: {Bit line contacts}
- H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells}
- H10B 12/482: {Bit lines}
- H10B 12/488: {Word lines}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.

## Claims

### Claim 1

A semiconductor device comprising:
laterally-neighboring word lines having respective word line caps thereon;
an active region between the laterally-neighboring word lines and word line caps;
a stack material adjacent the word line caps; and
a digit line contact between opposing substantially vertical surfaces of the stack material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps,
wherein a transition surface between and connecting the substantially horizontal surfaces and the substantially vertical surfaces of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein a peripheral surface of the digit line contact is complementary in shape to the substantially horizontal surfaces of the word line caps, the opposing substantially vertical surfaces of the word line caps, and the transition surface therebetween such that the peripheral surface of the digit line contact is indented toward the longitudinal axis.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the digit line contact is adjacent to the substantially horizontal surfaces, the substantially vertical surfaces, and the transition surface of the respective word line caps.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the digit line contact tapers in width as the digit line contact extends axially along the longitudinal axis.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, further comprising a digit line adjacent the stack material and the digit line contact.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein a barrier material intervenes between the digit line contact and respective substantially vertical surfaces of the stack material.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein a substantially horizontal surface of the digit line contact is coplanar with the substantially horizontal surface of the stack material.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the stack material comprises an insulating material and a semiconductive material.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the digit line contact comprises a horizontally elongated portion extending between opposing substantially vertical surfaces of the insulating material and opposing substantially vertical surfaces of a conductive material and a vertically elongated portion extending between opposing substantially vertical surfaces of the word line caps.

### Claim 10

An electronic system comprising:
an input device;
an output device;
a processor device operably coupled to the input device and the output device; and
a memory device operably coupled to the processor device and comprising:
a digit line contact having a perimeter defined by laterally-neighboring word line caps, an insulating material, and a semiconductive material,
wherein a substantially horizontal surface, a substantially vertical surface, and a transition surface therebetween of the respective word line caps defines a portion of the perimeter of the digit line contact, wherein the transition surface of the word line caps projects toward a longitudinal axis extending centrally through the digit line contact.

### Claim 11 (depends on 10)

The electronic system of claim 10, wherein:
the digit line contact comprises an upper portion and a lower portion;
the upper portion of the digit line contact extends between opposing substantially vertical surfaces of the semiconductive material and between opposing substantially vertical surfaces of the word line caps;
the lower portion of the digit line contact extends between opposing substantially vertical surfaces of the laterally-neighboring word line caps; and
the upper portion having a greater lateral dimension than the lower portion.

### Claim 12 (depends on 10)

The electronic system of claim 10, wherein the memory device further comprises a digit line adjacent to the digit line contact.