# US 10,770,458 B2 · Nanowire transistor device architectures

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- Number: US 10,770,458 B2
- Document ID: US10770458B2
- Status: Granted
- Kind: B2
- Application number: 15/754,709
- Filed: 2015-09-25
- Published: 2019-09-12
- Granted: 2020-09-08
- Earliest claimed: 2015-09-25
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Rishabh Mehandru; Tahir Ghani; Szuya S. Liao; Seiyon Kim
- Web page: https://patentgrep.com/patent/US10770458B2

## CPC

- H10D 84/834: {comprising FinFETs}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10D 30/43: having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
- H10D 30/501: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/121: {oriented parallel to substrates}
- H10D 64/514: {characterised by the insulating layers}
- H10D 64/681: {having a compositional variation, e.g. multilayered}
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/0135: {Manufacturing their gate conductors}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/832: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/6736: {characterised by the shape of gate insulators}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

Techniques are disclosed for forming nanowire transistor architectures in which the presence of gate material between neighboring nanowires is eliminated or otherwise reduced. In some examples, neighboring nanowires can be formed sufficiently proximate one another such that their respective gate dielectric layers are either: (1) just in contact with one another (e.g., are contiguous); or (2) merged with one another to provide a single, continuous dielectric layer shared by the neighboring nanowires. In some cases, a given gate dielectric layer may be of a multi-layer configuration, having two or more constituent dielectric layers. Thus, in some examples, the gate dielectric layers of neighboring nanowires may be formed such that one or more constituent dielectric layers are either: (1) just in contact with one another (e.g., are contiguous); or (2) merged with one another to provide a single, continuous constituent dielectric layer shared by the neighboring nanowires.

## Claims

### Claim 1

An integrated circuit comprising:
first and second nanowires comprising semiconductor material;
a gate only partially surrounding each of the first and second nanowires;
a first dielectric structure between the gate and the first nanowire, the first dielectric structure including one or more layers, each of the one or more layers of the first dielectric structure completely surrounding the first nanowire; and
a second dielectric structure between the gate and the second nanowire, the second dielectric structure including one or more layers, each of the one or more layers of the second dielectric structure completely surrounding the second nanowire;
wherein the first and second dielectric structures are in contact with one another, wherein the first and second dielectric structures collectively at a point of contact have an average thickness that is within 70% of twice an average thickness of either the first or second dielectric structure alone at a point without such contact, and wherein an outermost layer of the first dielectric structure is in contact with an outermost layer of the second dielectric structure.

### Claim 2 (depends on 1)

The integrated circuit of claim 1, wherein at least one of the first dielectric structure and the second dielectric structure has a single-layer configuration.

### Claim 3 (depends on 1)

The integrated circuit of claim 1, wherein at least one of:
the first dielectric structure has a multi-layer configuration that includes a first underlayer over the first nanowire, and a first overlayer over the first underlayer; and/or
the second dielectric structure has a multi-layer configuration that includes a second underlayer over the second nanowire, and a second overlayer over the second underlayer.

### Claim 4 (depends on 3)

The integrated circuit of claim 3, wherein:
each of the first and second dielectric structures has a multi-layer configuration;
the first overlayer is the outermost layer of the first dielectric structure, and the second overlayer is the outermost layer of the second dielectric structure; and
the first and second overlayers are in contact with one another but are still discrete layers.

### Claim 5 (depends on 3)

The integrated circuit of claim 3, wherein:
the first dielectric structure has a multi-layer configuration;
the second dielectric structure has a single-layer configuration;
the overlayer of the first dielectric structure is the outermost layer of the first dielectric structure, and the single layer of the second dielectric structure is the outermost layer of the second dielectric structure; and
the outermost layer of the first dielectric structure and the outermost layer of the second dielectric structure are in contact with one another but are still discrete layers.

### Claim 6 (depends on 3)

The integrated circuit of claim 3, wherein the first overlayer and the second overlayer comprise high-k dielectric material.

### Claim 7 (depends on 3)

The integrated circuit of claim 3, wherein:
at least one of the first and second underlayers has an average thickness in the range of about 0.1-5 nm; and
at least one of the first and second overlayers has an average thickness in the range of about 0.1-5 nm.

### Claim 8 (depends on 1)

The integrated circuit of claim 1, wherein the outermost layer of at least one of the first and second dielectric comprises a high-k dielectric material.

### Claim 9 (depends on 1)

The integrated circuit of claim 1, wherein at least one of the first and second nanowires has:
an average width or diameter in the range of about 1-15 nm; and
a curvilinear cross-sectional profile.

### Claim 10 (depends on 1)

The integrated circuit of claim 1, wherein at least one of the first and second nanowires has:
an average width or diameter in the range of about 1-15 nm; and
a polygonal cross-sectional profile.

### Claim 11

An integrated circuit structure including a nanowire transistor device, the integrated circuit structure comprising:
first and second semiconductor nanowires, each of the first and second semiconductors having a curvilinear cross-section;
a gate comprising a metal, the gate at least partially surrounding each of the first and second semiconductor nanowires; and
a first dielectric structure surrounding the first semiconductor nanowire, such that the first dielectric structure is at least partially between the first nanowire and the gate; and
a second dielectric structure surrounding the second semiconductor nanowire, such that the second dielectric structure is at least partially between the second nanowire and the gate;
wherein the first and second dielectric structures are configured such that they are merged with one another, providing a single, continuous dielectric layer shared by the first and second semiconductor nanowires, such that at a point of merging, the first and second dielectric structures collectively have an average thickness of less than twice an average thickness of either the first or second dielectric layer alone at a point without such merging.

### Claim 12 (depends on 11)

The integrated circuit of claim 11, wherein at the point of merging, the first and second dielectric structures collectively have an average thickness less than or about equal to an average thickness of either the first or second dielectric structure alone at a point without such merging.

### Claim 13 (depends on 11)

The integrated circuit structure of claim 11, wherein the gate only partially surrounds each the first and second semiconductor nanowires, and the single, continuous dielectric layer includes high-k dielectric material and completely surrounds each of the first and second semiconductor nanowires.

### Claim 14 (depends on 11)

The integrated circuit structure of claim 11, wherein the first and second dielectric structures are bi-layer structures, each bi-layer structure including an underlayer over the corresponding nanowire, and an overlayer over the underlayer, the overlayer distinct from the underlayer, and the overlayer completely surrounds each of the first and second semiconductor nanowires.

### Claim 15 (depends on 14)

The integrated circuit structure of claim 14, wherein the underlayer comprises silicon and oxygen, and the overlayer comprises a high-k dielectric material having a dielectric constant greater than that of silicon dioxide.

### Claim 16

An integrated circuit comprising:
first and second nanowires;
a gate only partially surrounding each of the first and second nanowires;
a first dielectric layer and a second dielectric layer between the gate and the first nanowire, such that the first dielectric layer surrounds the first nanowire, and the second dielectric layer surrounds the first dielectric layer; and
a third dielectric layer and a fourth dielectric layer between the gate and the second nanowire, such that the third dielectric layer surrounds the second nanowire, and the fourth dielectric layer surrounds the third dielectric layer;
wherein the second dielectric layer is in direct contact with the fourth dielectric layer, and the first dielectric layer is not in direct contact with the third dielectric layer.

### Claim 17 (depends on 16)

The integrated circuit structure of claim 16, wherein at least one of the first and third dielectric layers comprises silicon and oxygen, and at least one of the second and fourth dielectric layers comprises a high-k dielectric material having a dielectric constant greater than that of silicon dioxide.

### Claim 18 (depends on 16)

The integrated circuit structure of claim 16, wherein the second and fourth dielectric layers comprise a high-k dielectric material.

### Claim 19 (depends on 16)

The integrated circuit structure of claim 16, wherein the second and fourth dielectric layers comprise hafnium.

### Claim 20 (depends on 16)

The integrated circuit structure of claim 16, wherein the second and fourth dielectric layers are in direct contact with one another, but are still discrete layers.