# US 10,770,451 B2 · Thin-film ESD protection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,451 B2 - Document ID: US10770451B2 - Status: Granted - Kind: B2 - Application number: 16/227,155 - Filed: 2018-12-20 - Published: 2019-04-25 - Granted: 2020-09-08 - Earliest claimed: 2017-03-17 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Souko Fukahori - Web page: https://patentgrep.com/patent/US10770451B2 ## CPC - H10D 89/911: {using passive elements as protective elements} - H10D 89/611: {using diodes as protective elements} - H10P 14/40: of conductive or resistive materials - H10W 20/43: Layouts of interconnections - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H10W 44/601: {Capacitive arrangements (H10W44/20 takes precedence)} - H10D 84/204: {of combinations of diodes or capacitors or resistors} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A thin-film ESD protection device that includes a semiconductor substrate having a first and second principal surfaces); a first insulating layer disposed on the first principal surface; a second insulating layer disposed formed on the second principal surface; and first and second input/output electrodes, ground electrodes, a diode element, a capacitor element, and an inductor element. The capacitor element and the diode element are formed adjacent to the first principal surface, whereas the inductor element is formed adjacent to the second principal surface. The inductor element is connected to the first input/output electrode and the second input/output electrode by a first via conductor and a second via conductor, respectively, that pass through the semiconductor substrate from the first principal surface to the second principal surface. ## Claims ### Claim 1 A thin-film ESD protection device comprising: a semiconductor substrate having first and second principal surfaces that oppose each other; a first insulating layer disposed on the first principal surface; a first input/output electrode, a second input/output electrode, and a ground electrode each disposed on a surface of the first insulating layer; a diode element disposed adjacent to the first principal surface of the semiconductor substrate and electrically connected between the first input/output electrode and the ground electrode; a capacitor element disposed adjacent to the first principal surface of the semiconductor substrate and electrically connected between the second input/output electrode and the ground electrode; and an inductor element disposed adjacent to the second principal surface of the semiconductor substrate and electrically connected to the first input/output electrode by a first via conductor passing through the semiconductor substrate between the first and second principal surfaces and to the second input/output electrode by a second via conductor passing through the semiconductor substrate between the first and second principal surfaces. ### Claim 2 (depends on 1) The thin-film ESD protection device according to claim 1, wherein the semiconductor substrate is a high-resistivity substrate having an average electrical resistivity of at least 1.0 (Ω·cm). ### Claim 3 (depends on 1) The thin-film ESD protection device according to claim 1, wherein the diode element does not overlap the capacitor element in a plan view of the first principal surface of the semiconductor substrate. ### Claim 4 (depends on 1) The thin-film ESD protection device according to claim 1, wherein the semiconductor substrate, the first insulating layer, and a second insulating layer disposed on the second principal surface of the semiconductor substrate form a multilayer body having a rectangle shape with first and second sides opposite each other in a plan view of the first principal surface of the semiconductor substrate. ### Claim 5 (depends on 4) The thin-film ESD protection device according to claim 4, wherein the first input/output electrode and the second input/output electrode are disposed closer to the first side of the multilayer body than the second side, and the ground electrode is disposed closer to the second side of the multilayer body than the first side. ### Claim 6 (depends on 5) The thin-film ESD protection device according to claim 5, wherein the second insulating layer at least partly comprises a magnetic body, and the inductor element includes the magnetic body and a coil conductor disposed adjacent to the second principal surface of the semiconductor substrate. ### Claim 7 (depends on 6) The thin-film ESD protection device according to claim 6, wherein the coil conductor is disposed on the second principal surface, and the magnetic body comprises a magnetic sheet attached to the second principal surface. ### Claim 8 (depends on 6) The thin-film ESD protection device according to claim 6, wherein the inductor element includes the magnetic body and the coil conductor, and the magnetic body comprises a magnetic sheet attached to the second principal surface of the semiconductor substrate. ### Claim 9 (depends on 1) The thin-film ESD protection device according to claim 1, wherein at least one of the first via conductor and the second via conductor has a magnetic film disposed over an outer periphery thereof. ### Claim 10 (depends on 1) The thin-film ESD protection device according to claim 1, wherein the inductor element and the capacitor element form a low-pass filter. ### Claim 11 A thin-film ESD protection device comprising: a semiconductor substrate with first and second opposing surfaces; first and second insulating layers disposed on the first and second surfaces of the semiconductor substrate, respectively; a first input/output electrode, a second input/output electrode, and a ground electrode each disposed on the first insulating layer; a diode element collectively formed in the semiconductor substrate and the first insulating layer and that is electrically connected between the first input/output electrode and the ground electrode; a capacitor element formed in the first insulating layer and electrically connected between the second input/output electrode and the ground electrode; and an inductor element formed in the second insulating layer electrically connected between the first and second input/output electrodes. ### Claim 12 (depends on 11) The thin-film ESD protection device according to claim 11, further comprising first and second via conductors passing through the semiconductor substrate between the first and second principal surfaces thereof, with the inductor element connected to the first input/output electrode by the first via conductor and connected to the second input/output electrode by the second via conductor. ### Claim 13 (depends on 11) The thin-film ESD protection device according to claim 11, wherein the semiconductor substrate is a high-resistivity substrate having an average electrical resistivity of at least 1.0 (Ω·cm). ### Claim 14 (depends on 11) The thin-film ESD protection device according to claim 11, wherein the diode element does not overlap the capacitor element in a plan view of the first principal surface of the semiconductor substrate. ### Claim 15 (depends on 11) The thin-film ESD protection device according to claim 11, wherein the semiconductor substrate and the first and insulating layers form a multilayer body having a rectangle shape with first and second sides opposite each other in a plan view of the first principal surface of the semiconductor substrate. ### Claim 16 (depends on 15) The thin-film ESD protection device according to claim 15, wherein the first input/output electrode and the second input/output electrode are disposed closer to the first side of the multilayer body than the second side, and the ground electrode is disposed closer to the second side of the multilayer body than the first side. ### Claim 17 (depends on 16) The thin-film ESD protection device according to claim 16, wherein the second insulating layer at least partly comprises a magnetic body, and the inductor element includes the magnetic body and a coil conductor disposed adjacent to the second principal surface of the semiconductor substrate. ### Claim 18 (depends on 17) The thin-film ESD protection device according to claim 17, wherein the coil conductor is disposed on the second principal surface, and the magnetic body comprises a magnetic sheet attached to the second principal surface. ### Claim 19 (depends on 17) The thin-film ESD protection device according to claim 17, wherein the inductor element includes the magnetic body and the coil conductor, and the magnetic body comprises a magnetic sheet attached to the second principal surface of the semiconductor substrate. ### Claim 20 (depends on 12) The thin-film ESD protection device according to claim 12, wherein at least one of the first via conductor and the second via conductor has a magnetic film disposed over an outer periphery thereof.