# US 10,770,428 B2 · Semiconductor device and method

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- Number: US 10,770,428 B2
- Document ID: US10770428B2
- Status: Granted
- Kind: B2
- Application number: 16/458,646
- Filed: 2019-07-01
- Published: 2019-12-26
- Granted: 2020-09-08
- Earliest claimed: 2018-06-25
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Chen-Hua Yu; Chun Hui Yu; Kuo-Chung Yee
- Web page: https://patentgrep.com/patent/US10770428B2

## CPC

- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/095: {of vias therein}
- H10W 70/635: {Through-vias}
- H10W 72/072: {of bump connectors}
- H10W 74/01: Manufacture or treatment
- H10W 74/014: {using batch processing}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 74/124: {the encapsulations having cavities other than that occupied by chips}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 90/00: Package configurations
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10P 72/7436: {used to support a device or a wafer when forming electrical connections thereto}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10P 90/1914: {using bonding}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/6528: {of the portions that connect to chips, wafers or package parts}
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10W 72/01255: {by using masks}
- H10W 72/01955: {by using masks}
- H10W 72/0198: {batch processes}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07254: {changes in dispositions}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting}
- H10W 72/07352: {changes in structures or sizes}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/221: {Structures or relative sizes}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/247: {Dispositions of multiple bumps}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/327: {Multiple die-attach connectors having different sizes}
- H10W 72/853: {On the same surface}
- H10W 72/874: {On different surfaces}
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9413: {on encapsulations}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 80/732: {having shape changed during the connecting}
- H10W 90/20: Configurations of stacked chips
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/28: the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/792: {between multiple chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.

## Claims

### Claim 1

A device comprising:
a first device comprising:
an integrated circuit device comprising a first connector;
a first polymer adhesive layer on the integrated circuit device; and
a first conductive layer on the first connector, the first polymer adhesive layer surrounding the first conductive layer;
a second device comprising:
an interposer comprising a second connector;
a second polymer adhesive layer on the interposer, the second polymer adhesive layer physically connected to the first polymer adhesive layer; and
a second conductive layer on the second connector, the second polymer adhesive layer surrounding the second conductive layer; and
a conductive connector bonding the first conductive layer to the second conductive layer, the conductive connector surrounded by an air gap.

### Claim 2 (depends on 1)

The device of claim 1, wherein a first width of the first conductive layer is less than a second width of the second conductive layer.

### Claim 3 (depends on 2)

The device of claim 2, wherein the conductive connector has a first portion adjacent the integrated circuit device and a second portion adjacent the interposer, the first portion having the first width, the second portion having the second width.

### Claim 4 (depends on 3)

The device of claim 3, wherein the air gap separates the second portion of the conductive connector from the first polymer adhesive layer.

### Claim 5 (depends on 3)

The device of claim 3, wherein the air gap separates the first portion of the conductive connector from the second polymer adhesive layer.

### Claim 6 (depends on 1)

The device of claim 1, wherein no seed layers are disposed between the first connector and the first conductive layer or between the first conductive layer and the conductive connector.

### Claim 7 (depends on 1)

The device of claim 1, further comprising:
a seed layer disposed between the first connector and the first conductive layer, no seed layers being disposed between the first conductive layer and the conductive connector.

### Claim 8

A device comprising:
an integrated circuit device comprising a first connector at a first side of the integrated circuit device;
an interposer comprising a second connector at a first side of the interposer;
a polymer adhesive material adhering the integrated circuit device to the interposer, the polymer adhesive material being a continuous layer extending from the first side of the integrated circuit device to the first side of the interposer;
a conductive connector extending through the polymer adhesive material, the conductive connector electrically connecting the first connector to the second connector, a portion of the conductive connector being exposed to an air gap in the polymer adhesive material;
a molding compound encapsulating the integrated circuit device, the molding compound being disposed at the first side of the interposer; and
a package substrate connected to a second side of the interposer, the second side of the interposer being opposite the first side of the interposer.

### Claim 9 (depends on 8)

The device of claim 8, wherein the polymer adhesive material comprises:
a first polymer adhesive layer at the first side of the integrated circuit device, the first polymer adhesive layer surrounding the first connector; and
a second polymer adhesive layer at the first side of the interposer, the second polymer adhesive layer surrounding the second connector, the first polymer adhesive layer and the second polymer adhesive layer being bonded by polymer bonds.

### Claim 10 (depends on 9)

The device of claim 9, wherein the integrated circuit device further comprises a third connector at a second side of the integrated circuit device, the second side of the integrated circuit device being opposite the first side of the integrated circuit device, and further comprising:
a third polymer adhesive layer at the second side of the integrated circuit device, the third polymer adhesive layer surrounding the third connector.

### Claim 11 (depends on 9)

The device of claim 9, wherein the conductive connector has a first portion extending through the first polymer adhesive layer and a second portion extending through the second polymer adhesive layer, the first portion having first width, the second portion having a second width, the second width being greater than the first width.

### Claim 12 (depends on 11)

The device of claim 11, wherein the air gap surrounds the first portion of the conductive connector.

### Claim 13 (depends on 9)

The device of claim 9, wherein a width of the conductive connector decreases continually in a direction extending from the interposer to the integrated circuit device.

### Claim 14

A device comprising:
a first integrated circuit device having a first connector at a first side of the first integrated circuit device;
a first polymer adhesive layer disposed on the first side of the first integrated circuit device;
a first redistribution structure comprising:
dielectric layers;
metallization patterns disposed between the dielectric layers; and
a second polymer adhesive layer disposed on a topmost metallization pattern of the metallization patterns, the second polymer adhesive layer being physically connected to the first polymer adhesive layer; and
a conductive connector extending through the first polymer adhesive layer and the second polymer adhesive layer, the conductive connector electrically connecting the topmost metallization pattern to the first connector, the conductive connector surrounded by an air gap.

### Claim 15 (depends on 14)

The device of claim 14 further comprising:
a second integrated circuit device, the first redistribution structure being disposed at a first side of the second integrated circuit device;
a molding compound encapsulating the second integrated circuit device; and
a through via extending through the molding compound, the through via and the second integrated circuit device being electrically connected to the metallization patterns of the first redistribution structure.

### Claim 16 (depends on 15)

The device of claim 15 further comprising:
a second redistribution structure, the second redistribution structure being disposed at a second side of the second integrated circuit device, the through via electrically connecting the first redistribution structure to the second redistribution structure.

### Claim 17 (depends on 14)

The device of claim 14 further comprising:
a first conductive layer disposed on the first connector, the first polymer adhesive layer surrounding the first conductive layer, the conductive connector being physically and electrically connected to the first conductive layer with no seed layer disposed between the first conductive layer and the conductive connector.

### Claim 18 (depends on 17)

The device of claim 17, wherein the first redistribution structure further comprises:
a second conductive layer disposed on a portion of the topmost metallization pattern, the second polymer adhesive layer surrounding the second conductive layer, the conductive connector being physically and electrically connected to the second conductive layer with no seed layer disposed between the second conductive layer and the conductive connector.

### Claim 19 (depends on 18)

The device of claim 18, wherein the first conductive layer has a first width, the second conductive layer has a second width, and the first width is greater than the second width.

### Claim 20 (depends on 8)

The device of claim 8 further comprising:
a first conductive layer between the first connector and the conductive connector, a first portion of the polymer adhesive material surrounding the first conductive layer; and
a second conductive layer between the second connector and the conductive connector, a second portion of the polymer adhesive material surrounding the second conductive layer, a first width of the first conductive layer being less than a second width of the second conductive layer.