# US 10,770,426 B2 · Micro device transferring method, and micro device substrate manufactured by micro device transferring method

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- Number: US 10,770,426 B2
- Document ID: US10770426B2
- Status: Granted
- Kind: B2
- Application number: 16/327,856
- Filed: 2017-08-21
- Published: 2019-08-22
- Granted: 2020-09-08
- Earliest claimed: 2016-08-24
- Assignees: Center for Advanced Meta-Materials
- Applicants: Center for Advanced Meta-Materials
- Inventors: Yun Hwangbo; Byung Ik Choi; Jae Hyun Kim; Yeon Woo Jeong; Seong Min Hong; Bong Kyun Jang; Kwang Seop Kim; Kyung Sik Kim; Hak Joo Lee
- Web page: https://patentgrep.com/patent/US10770426B2

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 72/0446: {Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates}
- H10P 10/00: Bonding of wafers, substrates or parts of devices
- H10P 72/30: for conveying, e.g. between different workstations
- H10W 20/01: {Manufacture or treatment}
- H10W 72/071: {Connecting or disconnecting}
- H10W 90/00: Package configurations
- H10H 20/0364: {of interconnections}
- H10W 72/0198: {batch processes}
- H10W 72/07173: {Means for moving chips, wafers or other parts, e.g. conveyor belts}
- H10W 72/072: {of bump connectors}
- H10W 72/07207: {Temporary substrates, e.g. removable substrates}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07353: {changes in shapes}
- H10W 72/225: {Bumps having a filler embedded in a matrix}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/253: {not comprising solid metals or solid metalloids, e.g. polymers or ceramics}
- H10W 72/334: {Cross-sectional shape, i.e. in side view}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for transferring a micro device, includes: a compression step in which a carrier film having a micro-device attached to an adhesive layer thereof is brought into contact with a substrate comprising a solder deposited on metal electrodes formed on the substrate and is compressed on the substrate; a first adhesive strength generation step in which the solder disposed between the micro-device and the metal electrodes is compressed in the compression step to generate first adhesive strength between the micro-device and the solder; a second adhesive generation step in which the micro-device is bonded to the adhesive layer through press-fitting in the compression step to generate second adhesive strength between the micro-device and the adhesive layer; and a release step in which the carrier film is separated from the substrate, with the micro-device adhered to the solder.

## Claims

### Claim 1

A micro-device transfer method comprising:
a compression step in which a carrier film having a micro-device attached to an adhesive layer thereof is brought into contact with a substrate comprising a solder deposited on metal electrodes formed on the substrate and is compressed on the substrate;
a first adhesive strength generation step in which the solder disposed between the micro-device and the metal electrodes is compressed in the compression step to generate first adhesive strength between the micro-device and the solder;
a second adhesive generation step in which the micro-device is bonded to the adhesive layer through press-fitting in the compression step to generate second adhesive strength between the micro-device and the adhesive layer; and
a release step in which the carrier film is separated from the substrate, with the micro-device adhered to the solder,
wherein the second adhesive strength is proportional to a press-fitting depth of the micro-device press-fitted into the adhesive layer and the press-fitting depth of the micro-device in the adhesive layer is determined within a range allowing the second adhesive strength to be less than the first adhesive strength.

### Claim 2 (depends on 1)

The micro-device transfer method according to claim 1, wherein the adhesive layer has a smaller thickness than a critical press-fitting depth of the micro-device at which the second adhesive strength proportional to the press-fitting depth of the micro-device press-fitted into the adhesive layer becomes larger than the first adhesive strength.

### Claim 3 (depends on 1)

The micro-device transfer method according to claim 1, wherein at least one of compressive force applied to the carrier film on the substrate in the compression step, a viscoelastic coefficient of the adhesive layer and yield strength of the adhesive layer is regulated such that the second adhesive strength proportional to the press-fitting depth of the micro-device press-fitted into the adhesive layer becomes less than the first adhesive strength.

### Claim 4 (depends on 3)

The micro-device transfer method according to claim 3, wherein the adhesive layer has a greater thickness than a critical press-fitting depth of the micro-device at which the second adhesive strength proportional to the press-fitting depth of the micro-device press-fitted into the adhesive layer becomes larger than the first adhesive strength.

### Claim 5 (depends on 1)

The micro-device transfer method according to claim 1, wherein, in the release step, release force for separating the carrier film from the substrate is sequentially applied from one side to the other side with reference to the micro-device such that the carrier film is sequentially separated from the micro-device from one side of a region in which the micro-device is bonded to the adhesive layer to the other side thereof.

### Claim 6 (depends on 5)

The micro-device transfer method according to claim 5, wherein the carrier film is disposed to surround a cylindrical roller and the release force for separating the carrier film from the substrate is sequentially applied to the micro-device by rotation of the roller about a rotational axis of the roller.

### Claim 7 (depends on 5)

The micro-device transfer method according to claim 5, wherein the carrier film is formed in a platen shape and the release force for separating the carrier film from the substrate is sequentially applied to the micro-device by applying the release force to one side of the carrier film.

### Claim 8 (depends on 1)

A micro-device substrate manufactured by the micro-device transfer method according to claim 1.