# US 10,770,417 B2 · Chip packages and methods for forming the same

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- Number: US 10,770,417 B2
- Document ID: US10770417B2
- Status: Granted
- Kind: B2
- Application number: 15/916,286
- Filed: 2018-03-09
- Published: 2019-06-06
- Granted: 2020-09-08
- Earliest claimed: 2017-12-04
- Assignees: Shunsin Technology (Zhong Shan) Limited
- Applicants: Shunsin Technology (Zhong Shan) Limited
- Inventors: Wang-Lai Yang
- Web page: https://patentgrep.com/patent/US10770417B2

## CPC

- B81B 7/007: {Interconnections between the MEMS and external electrical signals}
- B81C 1/00301: {Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias}
- B81C 1/00317: {Packaging optical devices}
- H10F 39/804: {Containers or encapsulations}
- B81B 2201/045: Optical switches
- B81C 2203/0154: Moulding a cap over the MEMS device
- H10W 72/073: {of die-attach connectors}
- H10W 72/075: {of bond wires}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/9413: {on encapsulations}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/751: {of bond wires}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A chip package for optical sensing includes a substrate, and a semiconductor device positioned on the substrate and coupled to the substrate through a first conducting element. Two molding processes are applied, to form a first colloid body on the substrate so as to cover the semiconductor device and, on the first colloid body, to form a second colloid body which covers an optical device. The optical device is electrically connected to the substrate through a second conducting element. The light transmittance of the second colloid body exceeds that of the first colloid body.

## Claims

### Claim 1

A chip package comprising:
a substrate;
a semiconductor element on the substrate, and coupled to the substrate through a first conductive element;
a first colloid body on the substrate and covering the semiconductor element;
an optical element in direct physical contact with the first colloid body and coupled to the substrate through a second conductive element; and
a second colloid body on the first colloid body and covering the optical element, wherein a light transmittance of the second colloid body exceeds a light transmittance of the first colloid body, and the second colloid body is in direct physical contact with both the first colloid body and the optical element.

### Claim 2 (depends on 1)

The chip package of claim 1, further comprising a third conductive element formed in the first colloid body and coupled to the first conductive element and the second conductive element.

### Claim 3 (depends on 2)

The chip package of claim 2, wherein the third conductive element is a metal plug.

### Claim 4 (depends on 1)

The chip package of claim 1, wherein the substrate comprises a first surface and a second surface opposite to the first surface, and the substrate comprises an interconnection structure passing through the first surface and the second surface, and coupled to the first conductive element and the second conductive element.

### Claim 5 (depends on 1)

The chip package of claim 1, wherein the semiconductor element comprises micro-electromechanical systems.

### Claim 6 (depends on 1)

The chip package of claim 1, wherein a thickness of the second colloid body is less than that of the first colloid body.

### Claim 7 (depends on 1)

The chip package of claim 1, wherein a coefficient of thermal expansion of the second colloid body exceeds that of the first colloid body.

### Claim 8 (depends on 1)

The chip package of claim 1, wherein a material of the first colloid body is a resin with dark color.

### Claim 9 (depends on 1)

The chip package of claim 1, wherein a material of the second colloid body is a transparent resin.

### Claim 10

A chip package comprising:
a substrate;
a semiconductor element on the substrate, and coupled to the substrate through a first conductive element;
a first colloid body on the substrate and covering the semiconductor element;
an optical element in direct physical contact with the first colloid body and coupled to the substrate through a second conductive element;
a second colloid body on the first colloid body and covering the optical element; and
a third conductive element in the first colloid body, the third conductive element in direct physical contact with both the first conductive element and the second conductive element, wherein a light transmittance of the second colloid body exceeds a light transmittance of the first colloid body.

### Claim 11

A chip package comprising:
a substrate;
a semiconductor element on the substrate, and coupled to the substrate through a first conductive element;
a first colloid body on the substrate and covering the semiconductor element;
an optical element in direct physical contact with the first colloid body and coupled to the substrate through a second conductive element;
a second colloid body on the first colloid body and covering the optical element; and
a third conductive element in the first colloid body, the third conductive element in direct physical contact with both the first conductive element and the second conductive element.