# US 10,770,390 B2 · Energy storing interposer device and manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,390 B2 - Document ID: US10770390B2 - Status: Granted - Kind: B2 - Application number: 16/463,970 - Filed: 2018-08-23 - Published: 2020-03-19 - Granted: 2020-09-08 - Earliest claimed: 2017-08-29 - Assignees: Smoltek AB - Applicants: Smoltek AB - Inventors: M Shafiqul Kabir; Anders Johansson; Muhammad Amin Saleem; Rickard Andersson; Vincent Desmaris - Web page: https://patentgrep.com/patent/US10770390B2 ## CPC - H10W 20/496: {Capacitor integral with wiring layers} - H10W 70/685: comprising multiple insulating layers - H10D 1/68: Capacitors having no potential barriers - H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation} - H10W 72/00: Interconnections or connectors in packages - H10W 72/90: Bond pads, in general - H10W 74/40: characterised by their materials - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - H10W 70/65: Shapes or dispositions of interconnections - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material. ## Claims ### Claim 1 An interposer device for electrically and mechanically interconnecting a first electrical circuit element and a second electrical circuit element, said interposer device having a first side to be electrically and mechanically connected to said first electrical circuit element, and a second side, opposite the first side, to be electrically and mechanically connected to said second electrical circuit element, wherein said interposer device comprises: a first conductor pattern on the first side of said interposer device, said first conductor pattern defining a portion of said interposer device to be covered by said first electrical circuit element when said first electrical circuit element is electrically and mechanically connected to said first conductor pattern; a second conductor pattern on the second side of said interposer device to be electrically and mechanically connected to said second electrical circuit element, said second conductor pattern being electrically coupled to said first conductor pattern; and a plurality of nanostructure energy storage devices arranged within the portion of said interposer device to be covered by said first electrical circuit element, each of said nanostructure energy storage devices comprising: at least a first plurality of conductive nanostructures; a conduction controlling material embedding each conductive nanostructure in said first plurality of conductive nanostructures; a first electrode connected to each conductive nanostructure in said first plurality of conductive nanostructures; and a second electrode separated from each conductive nanostructure in said first plurality of conductive nanostructures by said conduction controlling material, wherein at least one of said first electrode and said second electrode is connected to said first conductor pattern to allow electrical connection of said nanostructure energy storage device to said first electrical circuit element. ### Claim 2 (depends on 1) The interposer device according to claim 1, wherein said interposer device further comprises insulating material embedding each nanostructure energy storage device in said plurality of nanostructure energy storage devices. ### Claim 3 (depends on 2) The interposer device according to claim 2, wherein said interposer device further comprises a redistribution layer formed on the insulating material, said redistribution layer comprising a first conducting portion and a second conducting portion at least partly forming said first conductor pattern, and an insulating portion mutually separating said first and second conducting portions. ### Claim 4 (depends on 3) The interposer device according to claim 3, wherein: said first conducting portion is connected to one of the first electrode and the second electrode of a first nanostructure energy storage device in said plurality of nanostructure energy storage devices; and said second conducting portion is connected to one of the first electrode and the second electrode of a second nanostructure energy storage device in said plurality of nanostructure energy storage devices, different from said first nanostructure energy storage device. ### Claim 5 (depends on 1) The interposer device according to claim 1, wherein, in each nanostructure energy storage device in said plurality of nanostructure energy storage devices, the conductive nanostructures in the first plurality of conductive nanostructures are vertical nano structures. ### Claim 6 (depends on 5) The interposer device according to claim 5, wherein said interposer device comprises a device layer with an insulating device layer portion, said vertical nanostructures being grown on said insulating device layer portion. ### Claim 7 (depends on 6) The interposer device according to claim 6, further comprising a catalyst layer between said insulating device layer portion and said conductive nanostructures in said first plurality of conductive nanostructures. ### Claim 8 (depends on 6) The interposer device according to claim 6, wherein said first electrode is arranged between said insulating device layer and each conductive nanostructure in said first plurality of conductive nanostructures. ### Claim 9 (depends on 8) The interposer device according to claim 8, wherein each conductive nanostructure in said first plurality of conductive nanostructures is grown from said first electrode. ### Claim 10 (depends on 1) The interposer device according to claim 1, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said conduction controlling material is arranged as a conformal coating on each conductive nanostructure in said first plurality of conductive nanostructures. ### Claim 11 (depends on 1) The interposer device according to claim 1, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said second electrode covers said conduction controlling material. ### Claim 12 (depends on 1) The interposer device according to claim 1, wherein each nanostructure energy storage device in said plurality of nanostructure energy storage devices further comprises a second plurality of conductive nanostructures embedded in said conduction controlling material. ### Claim 13 (depends on 12) The interposer device according to claim 12, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said conductive nanostructures in said second plurality of conductive nanostructures are vertical nanostructures grown on an insulating device layer portion of a device layer comprised in said interposer device. ### Claim 14 (depends on 13) The interposer device according to claim 13, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said interposer device further comprising a catalyst layer between said insulating device layer portion and said conductive nanostructures in said second plurality of conductive nano structures. ### Claim 15 (depends on 13) The interposer device according to claim 13, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said second electrode is arranged between said insulating device layer portion and each conductive nanostructure in said second plurality of conductive nanostructures. ### Claim 16 (depends on 12) . The interposer device according to claim 12, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said conduction controlling material is arranged as a conformal coating on each conductive nanostructure in said second plurality of conductive nanostructures. ### Claim 17 (depends on 1) The interposer device according to claim 1, wherein, for each nanostructure energy storage device in said plurality of nanostructure energy storage devices, said conductive nanostructures are carbon nanostructures. ### Claim 18 (depends on 17) The interposer device according to claim 17, wherein said conductive nanostructures are carbon nanofibers. ### Claim 19 (depends on 1) The interposer device according to claim 1, wherein each nanostructure energy storage device in said plurality of nanostructure energy storage devices is a nanostructure capacitor, and said conduction controlling material is a dielectric material. ### Claim 20 (depends on 1) The interposer device according to claim 1, wherein each nanostructure energy storage device in said plurality of nanostructure energy storage devices is a nanostructure battery, and said conduction controlling material is a solid electrolyte. ### Claim 21 (depends on 1) An electronic device comprising: the interposer device according to claim 1; and a first electrical circuit element electrically and mechanically connected to the first conductor pattern on the first side of said interposer device to thereby cover said portion of the interposer device defined by said first conductor pattern. ### Claim 22 (depends on 21) The electronic device according to claim 21, wherein said first electrical circuit element is an integrated circuit. ### Claim 23 (depends on 21) The electronic device according to claim 21, wherein said electronic device further comprises a second electrical circuit element electrically and mechanically connected to the second side of said interposer device. ### Claim 24 (depends on 23) The electronic device according to claim 23, wherein said second electrical circuit element is a device substrate. ### Claim 25 A method of manufacturing an interposer device for electrically and mechanically interconnecting a first electrical circuit element and a second electrical circuit element, said method comprising the steps of: providing a substrate; forming a first device layer on said substrate, said first device layer comprising an insulating portion and a conducting portion defining a first conductor pattern for electrical connection to said first electrical circuit element, and a first electrode; forming at least a first plurality of conductive nanostructures on said first electrode, in such a way that each conductive nanostructure in said first plurality of conductive nanostructures is electrically connected to said first electrode; embedding each conductive nanostructure in said first plurality of conductive nanostructures in a conduction controlling material, thereby forming a nanostructure energy storage device layer on said first device layer; providing a second electrode in such a way that said second electrode is separated from each conductive nanostructure in said first plurality of conductive nanostructures by said conduction controlling material; forming a second device layer on said nanostructure energy storage device layer, said second device layer comprising an insulating portion and a conducting portion defining a second conductor pattern for electrical connection to said second electrical circuit element; forming conductive structures through said nanostructure energy storage device layer for interconnecting said first conductor pattern and said second conductor pattern; and removing said substrate. ### Claim 26 (depends on 25) The method according to claim 25, wherein said second electrode is included in the conducting portion of said second device layer. ### Claim 27 (depends on 25) The method according to claim 25, wherein said second electrode is provided to cover each conductive nanostructure in said first plurality of conductive nano structures. ### Claim 28 (depends on 25) The method according to claim 25, further comprising the steps of: forming a second plurality of conductive nanostructures on said first device layer; embedding each conductive nanostructure in said second plurality of conductive nanostructures in said conduction controlling material; and providing said second electrode in such a way that said second electrode is electrically connected to each conductive nanostructure in said second plurality of conductive nano structures. ### Claim 29 (depends on 28) The method according to claim 28, wherein: the conducting portion of said first device layer further defines said second electrode; and the conductive nanostructures in said second plurality of conductive nanostructures are formed on said second electrode, in such a way that each conductive nanostructure in said second plurality of conductive nanostructures is electrically connected to said second electrode. ### Claim 30 (depends on 28) The method according to claim 28, further comprising the step of: partly removing said conduction controlling material from said second plurality of conductive nanostructures to expose tips of conductive nanostructures in said second plurality of conductive nanostructures, wherein said second electrode is provided to cover said second plurality of conductive nanostructures and make electrical contact with said exposed tips. ### Claim 31 (depends on 25) The method according to claim 25, wherein said step of forming said at least first plurality of conductive nanostructures comprises the steps of: providing a patterned catalyst layer on said first device layer; and growing each conductive nanostructure in said first plurality of conductive nanostructures from said catalyst layer. ### Claim 32 (depends on 25) The method according to claim 25, wherein said step of forming said at least first plurality of conductive nanostructures comprises the steps of: providing a carbide layer on said first device layer; and creating pores by removing material from said carbide layer. ### Claim 33 (depends on 32) The method according to claim 32, wherein said carbide layer includes titanium, and said pores are created by removing titanium from said carbide layer.