# US 10,770,374 B2 · Through-silicon vias for heterogeneous integration of semiconductor device structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,374 B2 - Document ID: US10770374B2 - Status: Granted - Kind: B2 - Application number: 16/255,505 - Filed: 2019-01-23 - Published: 2020-07-23 - Granted: 2020-09-08 - Earliest claimed: 2019-01-23 - Assignees: Globalfoundries Inc. - Applicants: Globalfoundries Inc. - Inventors: Siva P. Adusumilli; Steven M. Shank - Web page: https://patentgrep.com/patent/US10770374B2 ## CPC - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - G02B 6/12002: {Three-dimensional structures} - G02B 6/132: by deposition of thin films - G02B 6/136: by etching - G02B 6/30: for use between fibre and thin-film device - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0245: {comprising use of blind vias during the manufacture} - H10W 20/0261: {characterised by the filling method or the material of the conductive fill} - H10W 20/216: {characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes} - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - G02B 6/12004: {Combinations of two or more optical elements} - G02B 6/4274: {Electrical aspects (G02B6/4263 and G02B6/4265 take precedence)} - G02B 2006/12061: {Silicon} - G02B 2006/12176: {Etching} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract The present disclosure relates to semiconductor structures and, more particularly, to through-silicon vias (TSV) for heterogeneous integration of semiconductor device structures and methods of manufacture. The structure includes: a plurality of cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of cavity structures; and a through wafer optical via extending through the substrate, between the plurality of cavity structures and which exposes a backside of the at least one optical device. ## Claims ### Claim 1 A structure comprising: a plurality of enclosed cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of enclosed cavity structures; and a through wafer optical via extending through the substrate, between the plurality of enclosed cavity structures and which exposes a backside to the at least one optical device, wherein the plurality of enclosed cavity structures have walls formed from semiconductor material of the single substrate and sealed with a reflowed epitaxial material at an upper portion. ### Claim 2 (depends on 1) The structure of claim 1, wherein the at least one optical device is a resonator on an epitaxial material grown on the substrate on a first side of the single substrate. ### Claim 3 (depends on 1) The structure of claim 1, wherein the at least one optical device is a plurality of optical devices on both sides of the single substrate. ### Claim 4 (depends on 3) The structure of claim 3, wherein the plurality of optical devices includes a waveguide structure and a resonator on a first side of the single substrate and a waveguide structure on a second side of the single substrate. ### Claim 5 (depends on 4) The structure of claim 4, further comprising a transistor on both the first side of the single substrate and the second side of the single substrate, wherein: the transistors are located over a separate cavity structure of the plurality of enclosed cavity structures on the first side of the single substrate and second side of the single substrate; the waveguide structures are located over another separate cavity structure of the plurality of enclosed cavity structures on the first side of the single substrate and second side of the single substrate; and the resonator on the first side of the substrate lies between the waveguide structures and the transistors. ### Claim 6 (depends on 5) The structure of claim 5, wherein the plurality of enclosed cavity structures are sealed with SiGe material. ### Claim 7 (depends on 5) The structure of claim 5, wherein the plurality of optical devices are on the first side of the single substrate and the second side of the single substrate. ### Claim 8 (depends on 7) The structure of claim 7, wherein the plurality of enclosed cavity structures are sealed with oxidized SiGe material, the oxidized SiGe material is between substrate material and the waveguide structures on both the first side of the single substrate and the second side of the single substrate, and the substrate material and the transistors on both the first side of the single substrate and the second side of the single substrate. ### Claim 9 (depends on 5) The structure of claim 5, wherein the plurality of cavity structures are filled with insulator material. ### Claim 10 (depends on 5) The structure of claim 5, further comprising trench isolation regions at both at a top portion of the single substrate and a bottom portion of the single substrate. ### Claim 11 A structure comprising: at least one optical device provided on a substrate and between a plurality of cavity structures; a through wafer optical via extending through the substrate, between the plurality of cavity structures; a deep trench isolation and SiGe seal adjacent to the through wafer optical via which provides a bottom waveguide cladding; and a shallow trench isolation adjacent to the least one optical device which provides side waveguide cladding, wherein the at least one optical device is a plurality of optical devices on both sides of the substrate, the plurality of optical devices include a waveguide structure and a resonator on a first side of the substrate and a waveguide structure on a second side of the substrate, and the through wafer optical via extends through the substrate and contacts a backside of the resonator. ### Claim 12 (depends on 11) The structure of claim 11, wherein the at least one optical device is a resonator on a first side of the substrate and positioned between the plurality of cavity structures, and the through wafer optical via extends through the substrate and contacts a backside of the resonator. ### Claim 13 (depends on 12) The structure of claim 12, wherein the resonator is located on an epitaxial material grown on the substrate. ### Claim 14 (depends on 11) The structure of claim 11, wherein: the SiGe seal seals the plurality of cavity structures; and the deep trench isolation, the cavity structures and the shallow trench isolation are provided on the first side of the substrate and the second side of the substrate. ### Claim 15 (depends on 14) The structure of claim 14, further comprising a transistor on both the first side of the substrate and the second side of the substrate, wherein: the transistors are located over a first cavity structure of the plurality of cavity structures on the first side of the substrate and the second side of the substrate; the waveguide structures are located over second separate cavity structure of the plurality of cavity structures on the first side of the substrate and second side of the substrate; and the resonator on the first side of the substrate lies between the waveguide structures and the transistors. ### Claim 16 (depends on 15) The structure of claim 15, wherein the SiGe seal is oxidized SiGe material. ### Claim 17 (depends on 14) The structure of claim 14, wherein the plurality of cavity structures are filled with insulator material. ### Claim 18 A method comprising: forming multi-layer semiconductor devices on a single substrate; and forming a through wafer optical via extending through the single substrate and which contacts to a backside of an optical device of the multi-layer semiconductor devices on a first side of the single substrate, wherein the forming multi-layer semiconductor devices on a single substrate comprises: forming a plurality of cavity structures in the single substrate; and forming a plurality of optical devices on both sides of the single substrate and between the plurality of cavity structures, wherein the plurality of optical devices includes a waveguide structure and a resonator on a first side of the single substrate and a waveguide structure on a second side of the single substrate, and wherein the through wafer optical via is formed between the plurality of cavity structures and exposes a backside of at least one of the plurality of optical devices. ### Claim 19 (depends on 18) The method of claim 18, further comprises creating shallow trench isolation structures and deep trench isolation structures on both sides of the single substrate.