# US 10,770,371 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,371 B2 - Document ID: US10770371B2 - Status: Granted - Kind: B2 - Application number: 15/300,520 - Filed: 2014-07-09 - Published: 2017-06-15 - Granted: 2020-09-08 - Earliest claimed: 2014-07-09 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Yoichi Hironaka; Masuo Koga - Web page: https://patentgrep.com/patent/US10770371B2 ## CPC - H10W 40/611: {Bolts or screws} - H10W 40/77: Auxiliary members characterised by their shape - H10W 76/15: Containers comprising an insulating or insulated base - H10W 90/00: Package configurations - H10W 40/60: Securing means for detachable heating or cooling arrangements, e.g. clamps - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 74/40: characterised by their materials - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A base plate (1) made of a metal has a through-hole (2). An insulating substrate (3) is provided on the base plate (1). A semiconductor chip (4) is provided on the insulating substrate (3). A case (8) has a screw-hole (9) communicating with the through-hole (2), covers the insulating substrate (3) and the semiconductor chip (4), and is disposed on the base plate (1). A screw (11) made of a metal is inserted into the through-hole (2) and the screw-hole (9) to fix the case (8) to the base plate (1). A flexible material (12) having flexibility is filled in a cavity between a bottom surface of the screw-hole (9) in the case (8) and a distal end of the screw (11). ## Claims ### Claim 1 A semiconductor device comprising: a base plate made of a metal and having a through-hole; an insulating substrate on the base plate; a semiconductor chip on the insulating substrate; a case having a screw-hole formed only partially through the case, communicating with the through-hole, covering the insulating substrate and the semiconductor chip, and disposed on the base plate; a screw made of a metal and inserted into the through-hole and the screw-hole to fix the case to the base plate; and a flexible material having flexibility, compressed and filled in a cavity between a bottom surface of the screw-hole in the case and a distal end of the screw, wherein volume of the flexible material when it is uncompressed is larger than that of the cavity, an electrically conductive coat is applied to a side surface and the bottom surface of the screw-hole in the case, and the entire flexible material is composed of only a silicone rubber sponge or a fluorocarbon rubber sponge. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the flexible material has a heat resistance higher than maximum operative temperature of the semiconductor device. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the flexible material has an insulation higher than that of an air. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the flexible material is a material having conductivity. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the semiconductor chip is formed by a wide-band gap semiconductor. ### Claim 6 A semiconductor device comprising: a base plate made of a metal and having a through-hole; an insulating substrate on the base plate; a semiconductor chip on the insulating substrate; a case having a screw-hole, defined by sidewalls and a bottom, each formed by the case, the screw-hole communicating with the through-hole, covering the insulating substrate and the semiconductor chip, and disposed on the base plate; a screw made of a metal and inserted into the through-hole and the screw-hole to fix the case to the base plate; and a flexible material having flexibility, compressed and filled in a cavity between a bottom surface of the screw-hole in the case and a distal end of the screw, wherein volume of the flexible material when it is uncompressed is larger than that of the cavity, an electrically conductive coat is applied to the sidewalls and the bottom of the screw-hole in the case, and the entire flexible material is composed of only a silicone rubber sponge or a fluorocarbon rubber sponge. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein the flexible material has a heat resistance higher than maximum operative temperature of the semiconductor device. ### Claim 8 (depends on 6) The semiconductor device of claim 6, wherein the flexible material has an insulation higher than that of an air. ### Claim 9 (depends on 6) The semiconductor device of claim 6, wherein the flexible material is a material having conductivity. ### Claim 10 (depends on 6) The semiconductor device of claim 6, wherein the semiconductor chip is formed by a wide-band gap semiconductor. ### Claim 11 A semiconductor device comprising: a base plate made of a metal and having a through-hole; an insulating substrate on the base plate; a semiconductor chip on the insulating substrate; a case having a screw-hole communicating with the through-hole, covering the insulating substrate and the semiconductor chip, and disposed on the base plate; a screw made of a metal and inserted into the through-hole and the screw-hole to fix the case to the base plate; and a flexible material having flexibility, compressed and filled in a cavity between a bottom surface of the screw-hole in the case and a distal end of the screw, wherein volume of the flexible material when it is uncompressed is larger than that of the cavity, an electrically conductive coat is applied to a side surface and the bottom surface of the screw-hole in the case, and the entire flexible material is composed of only a fluorocarbon rubber sponge. ### Claim 12 (depends on 11) The semiconductor device of claim 11, wherein the flexible material has a heat resistance higher than maximum operative temperature of the semiconductor device. ### Claim 13 (depends on 11) The semiconductor device of claim 11, wherein the flexible material has an insulation higher than that of an air. ### Claim 14 (depends on 11) The semiconductor device of claim 11, wherein the flexible material is a material having conductivity. ### Claim 15 (depends on 11) The semiconductor device of claim 11, wherein the semiconductor chip is formed by a wide-band gap semiconductor.