# US 10,770,340 B2 · Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process

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- Number: US 10,770,340 B2
- Document ID: US10770340B2
- Status: Granted
- Kind: B2
- Application number: 15/726,854
- Filed: 2017-10-06
- Published: 2018-02-01
- Granted: 2020-09-08
- Earliest claimed: 2012-05-25
- Assignees: Hangzhou Silan Integrated Circuit Co., Ltd; Hangzhou Silan Microelectronics Co., Ltd.
- Applicants: Hangzhou Silan Integrated Circuit Co., Ltd.; Hangzhou Silan Microelectronics Co., Ltd.
- Inventors: Yongxiang Wen; Shaohua Zhang; Yulei Jiang; Yanghui Sun; Guoqiang Yu
- Web page: https://patentgrep.com/patent/US10770340B2

## CPC

- H10W 10/30: Isolation regions comprising PN junctions
- H10D 62/114: {PN junction isolations}
- H10P 90/1906: {Preparing SOI wafers}
- H10W 10/0126: {introducing electrical active impurities in local oxidation regions to create channel stoppers}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/031: {of isolation regions comprising PN junctions}
- H10W 10/061: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 84/0109: {the at least one component covered by H10D12/00 or H10D30/00 being a MOS device}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process. Further, with a minimum thickness of the field oxide layer, the parasitical threshold voltage between the aluminum wiring and the silicon surface of the high-voltage device can be higher than 1200V, thereby improving the planarization of oxide layer steps on the silicon surface in the whole high-voltage BCD process, and enhancing the reliability of the product.

## Claims

### Claim 1

A method for manufacturing an isolation structure for a high-voltage device in a high-voltage BCD process, comprising:
providing a semiconductor substrate having a first type of doping;
forming an epitaxial layer having a second type of doping on the semiconductor substrate;
forming an isolation region having the first type of doping in the epitaxial layer to isolate an epitaxial island on the semiconductor substrate, wherein the high-voltage device is located in the epitaxial island, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, wherein the isolation region has a doping concentration on the same order of magnitude as a doping concentration of the epitaxial layer, and the first type of doping is opposite to the second type of doping and wherein the isolation region increases the breakdown voltage of the high-voltage device in the BCD process; and
forming a field oxide layer over the isolation region.

### Claim 2 (depends on 1)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 1, wherein the field oxide layer has a thickness of 6000˜18000 Å.

### Claim 3 (depends on 1)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 1, wherein the epitaxial layer is a stacked structure.

### Claim 4 (depends on 3)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 3, wherein the epitaxial layer is a stacked structure with 2 layers, wherein the epitaxial layer and the isolation region are formed by:
performing ion implantation to the semiconductor substrate to form therein a first buried layer of the first type of doping and a second buried layer of the second type of doping;
growing a first epitaxial layer over the semiconductor substrate, wherein the first epitaxial layer covers the first buried layer and the second buried layer;
locating with a lithography mask and implanting ions of the first type of doping into the first epitaxial layer, to form a first isolation region;
annealing the first isolation region;
growing a second epitaxial layer over the first epitaxial layer;
locating with a lithography mask and implanting ions of the first type of doping into the second epitaxial layer, to form a second isolation region; and
annealing the second isolation region, such that the second isolation region, the first isolation region and the first buried layer joint in sequence to form the isolation region.

### Claim 5 (depends on 4)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 4, wherein the ions implanted into the first buried layer are boron ions with an implanting energy of 60˜100 KeV and an implantation dosage of 1E12˜1E14/cm2.

### Claim 6 (depends on 4)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 4, wherein the ions implanted into the first isolation region are boron ions with an implanting energy of 60˜100 KeV and an implantation dosage of 1E12˜1E14/cm2.

### Claim 7 (depends on 4)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 4, wherein the ions implanted into the second isolation region are boron ions with an implanting energy of 60˜100 KeV and an implantation dosage of 1E12˜1E14/cm2.

### Claim 8 (depends on 4)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 4, wherein the first epitaxial layer has a thickness of 3.0˜15.0 μm and a resistivity of 1.0˜10 Ω·cm, the second epitaxial layer has a thickness of 3.0˜15.0 μm and a resistivity of 1.0˜4.0 Ω·cm.

### Claim 9 (depends on 1)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 1, wherein the first type of doping is P-type, and the second type of doping is N-type.

### Claim 10 (depends on 9)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 9, wherein prior to forming the field oxide layer, the method further comprises:
locating with a mask and implanting ions of the first type of doping into a surface of the epitaxial layer to form an isolation surface region, wherein the field oxide layer is located over the isolation surface region.

### Claim 11 (depends on 10)

The method for manufacturing the isolation structure for the high-voltage device in the high-voltage BCD process of claim 10, wherein the ions implanted into the isolation surface region are boron ions with an implanting energy of 25˜50 KeV and an implantation dosage of 5E13˜5E14/cm2.