# US 10,770,321 B2 · Process kit erosion and service life prediction > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,321 B2 - Document ID: US10770321B2 - Status: Granted - Kind: B2 - Application number: 16/240,318 - Filed: 2019-01-04 - Published: 2019-05-16 - Granted: 2020-09-08 - Earliest claimed: 2016-08-11 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Kang-Lie Chiang; Greg A. Blackburn; Pallavi Zhang; Michael D. Armacost; Nitin Khurana - Web page: https://patentgrep.com/patent/US10770321B2 ## CPC - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - G01R 19/16576: {comparing DC or AC voltage with one threshold (G01R19/16514, G01R19/16519, G01R19/16528, G01R19/16533 and G01R19/1659 take precedence)} - G01R 21/06: by measuring current and voltage (G01R21/08 - G01R21/133 take precedence) - H10P 72/0421: {for drying etching} - H10P 72/06: {Apparatus for monitoring, sorting, marking, testing or measuring} - H10P 72/0612: {Production flow monitoring, e.g. for increasing throughput} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) ## Abstract Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component. ## Claims ### Claim 1 A method of monitoring a service life of a chamber component, comprising: receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises: receiving a first power measurement directed to a current of DC bias power from a first sensor; receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and receiving a third power measurement directed to a DC bias match position from a third sensor; comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value; determining whether the one or more power measurements exceed the one or more threshold values; and responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component. ### Claim 2 (depends on 1) The method of claim 1, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; determining whether the second power measurement exceeds a second threshold value a second number of times; and determining whether the third power measurement exceeds a third threshold value a third number of times. ### Claim 3 (depends on 1) The method of claim 1, wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises: receiving a first power measurement directed to a current of an RF source from a first sensor; and receiving a second power measurement directed to a voltage of the RF source. ### Claim 4 (depends on 3) The method of claim 3, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; and determining whether the second power measurement exceeds a second threshold value a second number of times. ### Claim 5 (depends on 1) The method of claim 1, wherein the semiconductor processing chamber further comprises a substrate support disposed within the semiconductor processing chamber, the substrate support comprising a ring assembly having a cover ring and an edge ring, wherein the chamber component being monitored is one of the cover ring or the edge ring. ### Claim 6 (depends on 1) The method of claim 1, responsive to determining that a power measurement exceeds a threshold value, issuing a notice of a state of the chamber component, comprises: stopping substrate processing. ### Claim 7 A system, comprising: a processor; a semiconductor processing chamber having one or more sensors, each sensor in communication with the processor; and a memory storing program code, which, when executed on the processor, performs an operation for monitoring a service life of a chamber component, the operation comprising: receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises: receiving a first power measurement directed to a current of DC bias power from a first sensor; receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and receiving a third power measurement directed to a DC bias match position from a third sensor; comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value; determining whether the one or more power measurements exceed the one or more threshold values; and responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component. ### Claim 8 (depends on 7) The system of claim 7, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; determining whether the second power measurement exceeds a second threshold value a second number of times; and determining whether the third power measurement exceeds a third threshold value a third number of times. ### Claim 9 (depends on 7) The system of claim 7, wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises: receiving a first power measurement directed to a current of an RF source from a first sensor; and receiving a second power measurement directed to a voltage of the RF source. ### Claim 10 (depends on 9) The system of claim 9, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; and determining whether the second power measurement exceeds a second threshold value a second number of times. ### Claim 11 (depends on 7) The system of claim 7, wherein the semiconductor processing chamber further comprises a substrate support disposed within the semiconductor processing chamber, the substrate support comprising a ring assembly having a cover ring and an edge ring, wherein the chamber component being monitored is one of the cover ring or the edge ring. ### Claim 12 (depends on 7) The system of claim 7, wherein responsive to determining that a power measurement exceeds the threshold value, issuing a notice of a state of the chamber component, comprises: stopping substrate processing. ### Claim 13 A computer readable storage medium having stored thereon instructions that, when executed by a processor, cause the processor to perform a method of monitoring a service life of a chamber component, the method comprising: receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises: receiving a first power measurement directed to a current of DC bias power from a first sensor; receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and receiving a third power measurement directed to a DC bias match position from a third sensor; comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value; determining whether the one or more power measurements exceed the one or more threshold values; and responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component. ### Claim 14 (depends on 13) The computer readable storage medium claim 13, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; determining whether the second power measurement exceeds a second threshold value a second number of times; and determining whether the third power measurement exceeds a third threshold value a third number of times. ### Claim 15 (depends on 13) The computer readable storage medium of claim 13, wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises: receiving a first power measurement directed to a current of an RF source from a first sensor; and receiving a second power measurement directed to a voltage of the RF source. ### Claim 16 (depends on 15) The computer readable storage medium of claim 15, wherein determining whether a power measurement exceeds the one or more threshold values, comprises: determining whether the first power measurement exceeds a first threshold value a first number of times; and determining whether the second power measurement exceeds a second threshold value a second number of times. ### Claim 17 (depends on 13) The computer readable storage medium of claim 13, wherein responsive to determining that a power measurement exceeds a threshold value, issuing a notice of a state of the chamber component, comprises: stopping substrate processing.