# US 10,770,309 B2 · Features for improving process uniformity in a millisecond anneal system

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- Number: US 10,770,309 B2
- Document ID: US10770309B2
- Status: Granted
- Kind: B2
- Application number: 15/378,580
- Filed: 2016-12-14
- Published: 2017-07-06
- Granted: 2020-09-08
- Earliest claimed: 2015-12-30
- Assignees: Mattson Technology, Inc.; Beijing E-Town Semiconductor Technology Co., Ltd.
- Applicants: Mattson Technology, Inc.; Beijing E-Town Semiconductor Technology Co., Ltd.
- Inventors: Alexandr Cosceev; Markus Hagedorn; Christian Pfahler
- Web page: https://patentgrep.com/patent/US10770309B2

## CPC

- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H05B 3/0047: {for semiconductor manufacture}
- H10P 34/422: {using incoherent radiation}
- H10P 72/0434: {mainly by convection}
- H10P 72/0436: {mainly by radiation}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- F27B 5/04: adapted for treating the charge in vacuum or special atmosphere
- F27B 5/16: Arrangements of air or gas supply devices
- F27B 17/0025: {specially adapted for treating semiconductor wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- F27B: FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS

## Abstract

Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.

## Claims

### Claim 1

A process for thermally treating a substrate in a thermal processing system, comprising:
obtaining data indicative of a temperature profile associated with one or more substrates during processing in a thermal processing system, the thermal processing system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber; and
adjusting a pressure in the processing chamber to affect a temperature uniformity across one or more substrates based at least in part on the data indicative of the temperature profile;
wherein adjusting a pressure in the process chamber comprises warping a water window based on the pressure in the processing chamber.

### Claim 2 (depends on 1)

The process of claim 1, wherein adjusting a pressure comprises adjusting the pressure in the processing chamber during processing of at least one of the one or more substrates to adjust a temperature profile of the at least one of the one or more substrates.

### Claim 3 (depends on 1)

The process of claim 1, wherein the pressure is adjusted within the range of about +2 kPa to about −2 kPA relative to atmospheric pressure.

### Claim 4 (depends on 1)

The process of claim 1, wherein adjusting the pressure in the processing chamber comprises adjusting a pressure differential between the processing chamber and a downstream line in a gas flow system configured to flow process gas through the processing chamber, the downstream line located downstream of one or more vent openings in the process chamber.

### Claim 5 (depends on 4)

The process of claim 4, wherein adjusting the pressure differential comprises adjusting a valve disposed in the downstream line.

### Claim 6 (depends on 5)

The process of claim 5, wherein the valve is adjusted, by one or more controllers, based on one or more signals from a pressure sensor configured to measure pressure inside the processing chamber.

### Claim 7 (depends on 1)

The process of claim 1, wherein the pressure is adjusted to influence a flow pattern of process gas in the processing chamber.

### Claim 8 (depends on 1)

The process of claim 1, wherein the water window comprises an inner plate and an outer plate with water flowing between the inner plate and the outer plate, the inner plate being disposed closer to the processing chamber relative to the outer plate.

### Claim 9 (depends on 8)

The process of claim 8, wherein the water window is warped such that the inner plate of the water window bends away from the processing chamber to provide a defocusing effect on lamp light.

### Claim 10 (depends on 8)

The process of claim 8, wherein the water window is warped such that the outer plate of the water window bends toward the processing chamber to provide a focusing effect on lamp light.