# US 10,770,308 B2 · Etching method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,308 B2 - Document ID: US10770308B2 - Status: Granted - Kind: B2 - Application number: 16/360,469 - Filed: 2019-03-21 - Published: 2019-09-26 - Granted: 2020-09-08 - Earliest claimed: 2018-03-23 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Shigeru Tahara; Nobuaki Seki; Takahiko Kato - Web page: https://patentgrep.com/patent/US10770308B2 ## CPC - H10P 50/267: {using plasmas} - H01J 37/32495: {Means for protecting the vessel against plasma} - H01J 37/32642: {Focus rings} - H01J 37/32715: {Workpiece holder} - H01J 37/32724: {Temperature} - H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge} - H10P 50/269: {pre- or post-treatments, e.g. anti-corrosion processes} - H10P 50/283: {by chemical means} - H10P 72/0434: {mainly by convection} - H10P 72/0602: {Temperature monitoring} - H10P 72/72: using electrostatic chucks - H10P 95/04: {Planarisation of conductive or resistive materials} - C23F 4/00: Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 - H10P 50/242: {of Group IV materials} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ## Abstract A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step. ## Claims ### Claim 1 A method for etching a ruthenium film, comprising: a first step of etching the ruthenium film by plasma processing using oxygen-containing gas; a second step of etching the ruthenium film by plasma processing using chlorine-containing gas; and acquiring in-plane distribution data of a thickness of the ruthenium film, wherein the first step and the second step are alternately performed, and in the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step, and in the first step and the second step, in-plane temperature distribution of the ruthenium film is controlled based on the in-plane distribution data of the thickness. ### Claim 2 (depends on 1) The method of claim 1, wherein the target processing time of the first step is equal to or less than the processing time in which a reaction between ruthenium and oxygen is saturated and/or the target processing time of the second step is equal to or less than the processing time in which a reaction between ruthenium and chlorine is saturated. ### Claim 3 (depends on 1) The method of claim 1, wherein in the first step and the second step, the target control temperature is 100° C. or lower. ### Claim 4 (depends on 2) The method of claim 2, wherein in the first step and the second step, the target control temperature is 100° C. or lower. ### Claim 5 (depends on 1) The method of claim 1, wherein in the first step and the second step, a high frequency bias power for attracting ions is applied. ### Claim 6 (depends on 3) The method of claim 3, wherein in the first step and the second step, a high frequency bias power for attracting ions is applied. ### Claim 7 (depends on 4) The method of claim 4, wherein in the first step and the second step, a high frequency bias power for attracting ions is applied. ### Claim 8 (depends on 1) The method of claim 1, further comprising: exhausting the oxygen-containing gas between the first step and the second step; and exhausting the chlorine-containing gas between the second step and the first step after the second step. ### Claim 9 (depends on 5) The method of claim 5, further comprising: exhausting the oxygen-containing gas between the first step and the second step; and exhausting the chlorine-containing gas between the second step and the first step after the second step. ### Claim 10 (depends on 6) The method of claim 6, further comprising: exhausting the oxygen-containing gas between the first step and the second step; and exhausting the chlorine-containing gas between the second step and the first step after the second step. ### Claim 11 (depends on 7) The method of claim 7, further comprising: exhausting the oxygen-containing gas between the first step and the second step; and exhausting the chlorine-containing gas between the second step and the first step after the second step. ### Claim 12 A method of etching a ruthenium film, comprising: a first step of etching the ruthenium film by plasma processing using oxygen-containing gas; a second step of etching the ruthenium film by plasma processing using chlorine-containing gas; and acquiring in-plane distribution data of a thickness of the ruthenium film, wherein the first step and the second step are performed alternately, and in the first step, a surface of the ruthenium film is etched due to a generation of a volatile oxide of ruthenium and, at the same time, a non-volatile oxide of ruthenium is generated on the surface of the ruthenium film, in the second step, the surface of the ruthenium film is etched due to a removal of the non-volatile oxide and, at the same time, a non-volatile chloride of ruthenium is generated on the surface of the ruthenium film, in the first step after the second step, the surface of the ruthenium film is etched due to a removal of the non-volatile chloride and the generation of the volatile oxide and, at the same time, the non-volatile oxide is generated, and in the first step and the second step, in-plane temperature distribution of the ruthenium film is controlled based on the in-plane distribution data of the thickness.