# US 10,770,300 B2 · Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,300 B2 - Document ID: US10770300B2 - Status: Granted - Kind: B2 - Application number: 16/572,553 - Filed: 2019-09-16 - Published: 2020-01-09 - Granted: 2020-09-08 - Earliest claimed: 2016-11-03 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Takashi Kuratomi; Avgerinos V. Gelatos; I-Cheng Chen; Faruk Gungor - Web page: https://patentgrep.com/patent/US10770300B2 ## CPC - H10P 14/418: {the conductive layers comprising transition metals} - C23C 16/04: Coating on selected surface areas, e.g. using masks - C23C 16/06: characterised by the deposition of metallic material - C23C 16/14: Deposition of only one other metal element - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C23C 16/45565: {Shower nozzles} - C23C 16/45574: {Nozzles for more than one gas} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - H01J 37/00: Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (H01J33/00, H01J40/00, H01J41/00, H01J47/00, H01J49/00 take precedence) - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H10P 14/412: {Deposition of metallic or metal-silicide materials} - H10P 14/432: {using selective deposition} - H10D 64/0112: {using conductive layers comprising silicides} - H10P 72/0454: {surrounding a central transfer chamber} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate. ## Claims ### Claim 1 A processing method comprising: flowing a first precursor into a volume in a processing chamber, the volume bounded by a chamber top and a gas distribution assembly; energizing the first precursor in the volume to form H+ and H* species and allowing the first precursor to flow through first fluid channels formed in the gas distribution assembly into a processing region in the processing chamber; and flowing a second precursor comprising a metal halide through the gas distribution assembly through second fluid channels into the processing region to react the first precursor in the processing region, wherein the metal halide and the H+ and H* species react to deposit a metal film on a first surface and a second surface of a substrate and unreacted metal halide species etch the metal film formed on the second surface to selectively deposit the metal film on the first surface with a selectivity greater than or equal to about 10:1. ### Claim 2 (depends on 1) The processing method of claim 1, wherein the first fluid channel and the second fluid channel isolated to prevent mixing of the first precursor and the second precursor until the precursors are in the processing region. ### Claim 3 (depends on 1) The processing method of claim 1, wherein the second precursor does not pass through a plasma generator so that only the first precursor is energized before entering the processing region. ### Claim 4 (depends on 1) The processing method of claim 1, wherein energizing the first precursor forms ions and radicals of the first precursor. ### Claim 5 (depends on 1) The processing method of claim 1, wherein the first surface comprises Si and the second surface comprises SiO2 or SiN. ### Claim 6 (depends on 5) The processing method of claim 5, wherein the metal halide comprises titanium chloride. ### Claim 7 (depends on 6) The processing method of claim 6, wherein the titanium chloride and the H+ and H* species react to deposit a titanium film on the first surface and the second surface. ### Claim 8 (depends on 7) The processing method of claim 7, wherein unreacted titanium chloride etches the titanium film formed on the second surface to selectively deposit a titanium film on the first surface. ### Claim 9 (depends on 1) The processing method of claim 1, wherein the first precursor is co-flowed with a carrier gas. ### Claim 10 A processing method comprising: positioning a substrate with a first surface and a second surface different from the first surface in a processing region of a processing chamber; flowing an energized first precursor comprising H+ and H* species through a dual channel gas distribution assembly into a processing region of a processing chamber; flowing a second precursor comprising a metal halide through the dual channel gas distribution assembly into the processing region; and reacting the energized first precursor and the second precursor in the processing region to deposit a film on a first surface and a second surface different from the first surface, wherein unreacted second precursor etches the film from the second surface to selectively form a film on the first surface with a selectivity greater than or equal to about 10:1. ### Claim 11 (depends on 10) The processing method of claim 10, wherein the energized first precursor flows through first fluid channels in the gas distribution assembly and the second precursor flows through second fluid channel in the gas distribution assembly, the first fluid channels isolated from the second fluid channels to prevent mixing of the energized first precursor and the second precursor until the precursors are in the processing region. ### Claim 12 (depends on 10) The processing method of claim 10, wherein the second precursor is not energized before passing through the gas distribution assembly. ### Claim 13 (depends on 10) The processing method of claim 10, wherein the first surface comprises Si and the second surface comprises SiO2 or SiN. ### Claim 14 (depends on 13) The processing method of claim 13, wherein the second precursor comprises a metal halide. ### Claim 15 (depends on 14) The processing method of claim 14, wherein the metal halide and the H+ and H* species react to deposit a metal film on the first surface and the second surface and unreacted metal halide etches the metal film formed on the second surface to selectively deposit a metal film on the first surface with a selectivity greater than or equal to about 10:1.