# US 10,770,293 B2 · Method for manufacturing a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,293 B2 - Document ID: US10770293B2 - Status: Granted - Kind: B2 - Application number: 16/105,934 - Filed: 2018-08-20 - Published: 2019-02-28 - Granted: 2020-09-08 - Earliest claimed: 2017-08-29 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Yu-Chung Su; Yahru Cheng; Ching-Yu Chang - Web page: https://patentgrep.com/patent/US10770293B2 ## CPC - H10P 76/2043: {using an anti-reflective coating} - G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) - H10P 50/73: {using masks for insulating materials} - H10P 76/2041: {Photolithographic processes} - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - H10P 76/4085: {characterised by the processes involved to create the masks} - H10W 20/01: {Manufacture or treatment} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a method of manufacturing a semiconductor device, a photo resist layer is formed over a substrate with underlying structures. The first photo resist layer is exposed to exposure radiation. The exposed first photo resist layer is developed with a developing solution. A planarization layer is formed over the developed photo resist layer. The underlying structures include concave portions, and a part of the concave portions is not filled by the developed first photo resist. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, the method comprising: forming a photo resist layer over a substrate with underlying structures; exposing the photo resist layer to exposure radiation; developing the exposed photo resist layer with a developing solution; and forming a planarization layer over the developed photo resist layer, wherein: the underlying structures include concave portions, and one of the concave portions is filled by the developed photo resist layer and one of the concave portions does not include the developed photo resist layer. ### Claim 2 (depends on 1) The method of claim 1, wherein the planarization layer is made of an organic material. ### Claim 3 (depends on 1) The method of claim 1, wherein the planarization layer is made of a photo resist material different from a material of the photo resist layer. ### Claim 4 (depends on 1) The method of claim 1, wherein the planarization layer has a different optical property than the photo resist layer. ### Claim 5 (depends on 1) The method of claim 1, wherein the planarization layer is made of a material different from a material of the photo resist layer in at least one material selected from the group consisting of a polymer structure, an acid labile molecule, a photo acid generator (PAG) amount, a quencher amount, a chromophore, a cross linker, and a solvent. ### Claim 6 (depends on 1) The method of claim 1, wherein the planarization layer is made of a same material as a material of the photo resist layer. ### Claim 7 (depends on 1) The method of claim 1, wherein the planarization layer is made of a bottom anti-reflective coating material. ### Claim 8 (depends on 1) The method of claim 1, wherein: the substrate includes a first area and a second area, a ratio of the concave portions of the first area is different from a ratio of the concave portions of the second area, and a ratio of the concave portions filled by the developed photo resist layer in the first area with respect to all the concave portions in the first area is different from a ratio of the concave portions filled by the developed photo resist layer in the second area with respect to all the concave portions in the second area. ### Claim 9 (depends on 8) The method of claim 8, wherein: the ratio of the concave portions of the first area is smaller than the ratio of the concave portions of the second area, and the ratio of the concave portions filled by the developed photo resist layer in the first area with respect to all the concave portions in the first area is smaller than the ratio of the concave portions filled by the developed photo resist layer in the second area with respect to all the concave portions in the second area. ### Claim 10 (depends on 1) The method of claim 1, wherein a photo resist material of the photo resist layer fills all the concave portions before the exposure. ### Claim 11 A method of manufacturing a semiconductor device, the method comprising: forming a photo resist layer over a substrate having a target area with underlying structures; exposing the photo resist layer to exposure radiation; developing the exposed photo resist layer with a developing solution; and forming a planarization layer over the developed photo resist layer, wherein: the underlying structures include concave portions, the developed photo resist layer in one concave portion is in direct contact with one end of the concave portion and a top of the developed photo resist layer in the one concave portion is located at a higher level than a top of the underlying structures and partially extends over the one end to a neighboring concave portion, and a volume Ve of the developed photo resist layer in the target area is in a range of 0.9 Vi