# US 10,770,289 B2 · Systems and methods for graphene based layer transfer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,289 B2 - Document ID: US10770289B2 - Status: Granted - Kind: B2 - Application number: 15/914,295 - Filed: 2018-03-07 - Published: 2018-07-12 - Granted: 2020-09-08 - Earliest claimed: 2015-09-08 - Assignees: Massachusetts Institute of Technology - Applicants: Massachusetts Institute of Technology - Inventors: Jeehwan Kim - Web page: https://patentgrep.com/patent/US10770289B2 ## CPC - H10P 14/3206: {Carbon, e.g. diamond-like carbon} - H10H 20/0133: {with a substrate not being Group III-V materials} - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/018: {Bonding of wafers} - H10P 14/272: {using mask materials other than SiO2 or SiN} - H10P 14/276: {Lateral overgrowth} - H10P 14/2904: {Silicon carbide} - H10P 14/2923: {being conductive materials, e.g. metallic silicides} - H10P 14/3246: {Monolayers} - H10P 14/3416: {Nitrides} - H10P 14/3421: {Arsenides} - H10P 14/36: {characterised by treatments done before the formation of the materials} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface. ## Claims ### Claim 1 A method, comprising: forming a single-crystalline film on a continuous graphene layer that is on a substrate, wherein forming the single-crystalline film on the graphene layer comprises using the substrate as a seed for the single-crystalline film; and separating the single-crystalline film and the substrate. ### Claim 2 (depends on 1) The method of claim 1, further comprising forming the graphene layer on the substrate. ### Claim 3 (depends on 2) The method of claim 2, wherein forming the graphene layer on the substrate comprises growing the graphene layer on the substrate. ### Claim 4 (depends on 2) The method of claim 2, wherein the substrate is a first substrate, and forming the graphene layer on the first substrate comprises transferring the graphene layer from a second substrate to the first substrate. ### Claim 5 (depends on 1) The method of claim 1, wherein the graphene layer is one of a plurality of graphene layers, and forming the single-crystalline film comprises forming the single-crystalline film on the plurality of graphene layers. ### Claim 6 (depends on 1) The method of claim 1, wherein the graphene layer is the only graphene layer between the single-crystalline film and the substrate. ### Claim 7 (depends on 1) The method of claim 1, wherein the graphene layer is a single-crystalline graphene layer. ### Claim 8 (depends on 1) The method of claim 1, wherein the graphene layer is a polycrystalline graphene layer. ### Claim 9 (depends on 1) The method of claim 1, wherein, during the separating, the graphene layer is used as a release layer. ### Claim 10 (depends on 1) The method of claim 1, wherein forming the single-crystalline film on the graphene layer comprises using a combination of the substrate and the graphene layer as a seed for the single-crystalline film. ### Claim 11 (depends on 1) The method of claim 1, wherein forming the single-crystalline film comprises depositing material of the substrate on the graphene layer. ### Claim 12 (depends on 1) The method of claim 1, wherein separating the single-crystalline film and the substrate comprises exfoliating the single-crystalline film. ### Claim 13 (depends on 1) The method of claim 1, wherein separating the single-crystalline film and the substrate comprises: forming a metal stressor on the single-crystalline film; disposing a flexible tape on the metal stressor; and pulling the single-crystalline film and the metal stressor off the graphene layer with the flexible tape. ### Claim 14 (depends on 1) The method of claim 1, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. ### Claim 15 (depends on 1) The method of claim 1, wherein the single-crystalline film comprises a semiconductor material. ### Claim 16 (depends on 1) The method of claim 1, wherein the substrate is a semiconductor substrate. ### Claim 17 (depends on 1) The method of claim 1, wherein the graphene layer is directly on the substrate. ### Claim 18 (depends on 1) The method of claim 1, wherein the single-crystalline film comprises SiC. ### Claim 19 A method, comprising: forming a single-crystalline film on a graphene layer that is on a substrate having a potential field, wherein the potential field of the substrate reaches beyond the graphene layer to seed the growth of the single-crystalline film; and separating the single-crystalline film and the substrate. ### Claim 20 (depends on 19) The method of claim 19, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. ### Claim 21 (depends on 19) The method of claim 19, wherein the single-crystalline film comprises a semiconductor material. ### Claim 22 (depends on 19) The method of claim 19, wherein the substrate is a semiconductor substrate. ### Claim 23 (depends on 19) The method of claim 19, wherein the single-crystalline film comprises SiC.