# US 10,770,281 B2 · Ion trap device

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- Number: US 10,770,281 B2
- Document ID: US10770281B2
- Status: Granted
- Kind: B2
- Application number: 16/471,727
- Filed: 2018-03-01
- Published: 2020-03-19
- Granted: 2020-09-08
- Earliest claimed: 2017-03-07
- Assignees: Shimadzu Corporation
- Applicants: Shimadzu Corporation
- Inventors: Makoto Hazama
- Web page: https://patentgrep.com/patent/US10770281B2

## CPC

- H01J 49/022: {Circuit arrangements, e.g. for generating deviation currents or voltages (regulating electric or magnetic variables in general, e.g. current, magnetic field G05F); Components associated with high voltage supply (high voltage supply per se H02M)}
- H01J 49/427: {Ejection and selection methods}
- H01J 49/0486: {with means for monitoring the sample temperature}
- H01J 49/424: {Three-dimensional ion traps, i.e. comprising end-cap and ring electrodes}
- H01J 49/4295: {Storage methods}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

An ion trap includes: an ion trap including a plurality of electrodes; a rectangular voltage generator including a voltage source for generating a direct voltage and a switching section, the rectangular voltage generator configured to operate the switching section to generate a rectangular voltage by switching the direct voltage generated by the voltage source and to apply the rectangular voltage to at least one of the plurality of electrodes; and a switching section temperature controller configured to control a temperature of the switching section so as to maintain the temperature of the switching section at a target temperature which is higher than a highest reaching temperature of the switching section.

## Claims

### Claim 1

An ion trap device, comprising:
a) an ion trap including a plurality of electrodes;
b) a rectangular voltage generator including a voltage source for generating a direct voltage and a switching section, the rectangular voltage generator configured to operate the switching section to generate a rectangular voltage by switching the direct voltage generated by the voltage source, and to apply the rectangular voltage to at least one of the plurality of electrodes; and
c) a switching section temperature controller configured to control a temperature of the switching section so as to maintain the temperature of the switching section at a target temperature which is higher than a highest reaching temperature of the switching section during an operation of the ion trap and lower than a highest permissible temperature for an operation of the switching section.

### Claim 2 (depends on 1)

The ion trap device according to claim 1, wherein the switching section includes a semiconductor switching element; and
the switching section temperature controller further comprises:
d) a heatsink thermally connected to the semiconductor switching element;
e) a heater configured to heat the heatsink;
f) a temperature sensor configured to measure a temperature of the heatsink; and
g) a controller configured to control the heater so that the temperature measured with the temperature sensor becomes closer to the target temperature.

### Claim 3 (depends on 2)

The ion trap device according to claim 2, wherein the heatsink is made of a ceramic material.

### Claim 4 (depends on 2)

The ion trap device according to claim 2, wherein the switching section includes a plurality of the semiconductor switching elements, and the heatsink is thermally connected to at least two of the semiconductor switching elements.

### Claim 5 (depends on 1)

The ion trap device according to claim 1, wherein the rectangular voltage generator further comprises:
h) a first voltage source configured to generate a direct voltage;
i) a second voltage source configured to generate a direct voltage different from the direct voltage generated by the first voltage source;
j) a first switching section configured to turn on and off an output of the direct voltage from the first voltage source; and
k) a second switching section configured to turn on and off an output of the direct voltage from the second voltage source,
and the rectangular voltage generator is configured to generate the rectangular voltage by alternately turning on and off the first switching section and the second switching section,
where the first switching section and the second switching section are each formed by a single semiconductor switching element made of a silicon carbide semiconductor.