# US 10,770,273 B2 · OES device, plasma processing apparatus including the same and method of fabricating semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,273 B2 - Document ID: US10770273B2 - Status: Granted - Kind: B2 - Application number: 16/117,779 - Filed: 2018-08-30 - Published: 2019-08-15 - Granted: 2020-09-08 - Earliest claimed: 2018-02-09 - Assignees: Samsung Electronics Co., Ltd.; Industry-Academic Corperation Foundation, Yonsei University - Applicants: Samsung Electronics Co., Ltd.; Industry-Academic Cooperation Foundation, Yonsei University - Inventors: In-Joong Kim; Il Gu Yun - Web page: https://patentgrep.com/patent/US10770273B2 ## CPC - H01J 37/32972: {Spectral analysis} - G01N 21/68: using high frequency electric fields - G01N 21/73: using plasma burners or torches - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 2237/24507: Intensity, dose or other characteristics of particle beams or electromagnetic radiation - H01J 2237/2482: Optical means - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber configured to perform a plasma process on a wafer, a viewport configured to transmit plasma light generated in the chamber, a rotation module coupled to the viewport to be rotatable around a rotation axis, and an OES (Optical Emission Spectroscopy) device which is coupled to the rotation module and configured to receive the plasma light, wherein the rotation module includes a first surface facing the viewport and a second surface facing the OES device, wherein the first surface is configured to block a part of the plasma light, and includes a first opening through which an inside of the rotation module is configured to be exposed to a part of the plasma light, and wherein the second surface includes a second opening configured to be in light communication with the first opening. ## Claims ### Claim 1 A plasma processing apparatus comprising: a chamber configured to perform a plasma process on a wafer; a viewport configured to transmit plasma light generated in the chamber; a rotation module coupled to the viewport to be rotatable around a rotation axis; and an OES (Optical Emission Spectroscopy) device which is coupled to the rotation module and configured to receive the plasma light, wherein the rotation module includes a first surface facing the viewport and a second surface facing the OES device, wherein the first surface is configured to block a part of the plasma light, and includes a first opening through which an inside of the rotation module is configured to be exposed to a part of the plasma light, and wherein the second surface includes a second opening configured to be in optical communication with the first opening. ### Claim 2 (depends on 1) The plasma processing apparatus of claim 1, wherein the rotation module is configured to be positioned at a first angle to transmit a part of the plasma light coming from the chamber to the first opening, and wherein the rotation module is configured to rotate by a second angle to transmit a different part of the plasma light coming from the chamber to the first opening. ### Claim 3 (depends on 2) The plasma processing apparatus of claim 2, wherein the first opening has a semicircular shape. ### Claim 4 (depends on 2) The plasma processing apparatus of claim 2, wherein the first angle corresponds to a datum point and the second angle is 180 degrees from the datum point. ### Claim 5 (depends on 2) The plasma processing apparatus of claim 2, wherein the rotation module is configured to be positioned at the first angle to transfer plasma light coming from a first area of the chamber, and the rotation module is configured to rotate by the second angle to transfer plasma light coming from a second area of the chamber, the second area is different from the first area, each of the first and second areas compose a half of the chamber which is monitored by the OES device. ### Claim 6 (depends on 5) The plasma processing apparatus of claim 5, wherein the OES device is configured to monitor the plasma light coming from the first area, and wherein the OES device is configured to compare the plasma light coming from the second area to the plasma light coming from the first area to determine a plasma uniformity in the chamber. ### Claim 7 (depends on 2) The plasma processing apparatus of claim 2, wherein the first opening has a quadrant shape. ### Claim 8 (depends on 7) The plasma processing apparatus of claim 7, wherein the rotation module is configured to rotate by a third angle to transmit a part of the plasma light coming from the chamber through the first opening, and the rotation module is configured to rotate by a fourth angle to transmit a part of the plasma light coming from the chamber through the first opening. ### Claim 9 (depends on 8) The plasma processing apparatus of claim 8, wherein the first angle corresponds to a datum point, the second angle is 90 degrees from the datum point, the third angle is 180 degrees from the datum point, and the fourth angle is 270 degrees from the datum point. ### Claim 10 (depends on 8) The plasma processing apparatus of claim 8, wherein the OES device is configured to monitor the plasma light coming from the chamber by rotating the rotation module by the first, second, third and fourth angles, wherein the OES device is configured to compare the plasma light coming through the rotation module in the first and fourth angles to determine a plasma uniformity of an upper part of the chamber, and wherein the OES device is configured to compare the plasma light coming through the rotation module in the second and third angles to determine a plasma uniformity of a lower part of the chamber. ### Claim 11 (depends on 1) The plasma processing apparatus of claim 1, wherein a radius of the first opening is different from a radius of the second opening. ### Claim 12 (depends on 11) The plasma processing apparatus of claim 11, wherein the radius of the first opening is larger than the radius of the second opening. ### Claim 13 (depends on 1) The plasma processing apparatus of claim 1, wherein the OES device comprises: a light-receiving part configured to receive the plasma light transmitted from the rotation module, a spectroscope configured to separate the plasma light to analyze intensity depending on wavelength; and an optical cable connecting the light-receiving part and the spectroscope. ### Claim 14 An OES (Optical Emission Spectroscopy) device comprising: a rotation module coupled to a viewport of a chamber, the rotation module configured to transmit plasma light generated in the chamber, the rotation module configured to be rotatable around a rotation axis; a light-receiving part coupled to the rotation module and configured to receive the plasma light; a spectroscope configured to separate the plasma light and analyze intensities of corresponding wavelengths; and an optical cable which connects the light-receiving part and the spectroscope, wherein the rotation module includes a first surface coupled to the viewport and a second surface coupled to the light-receiving part, wherein the first surface is configured to block a part of the plasma light, and includes a first opening through which an inside of the rotation module is configured to be exposed to a part of the plasma light, and wherein the second surface includes a second opening configured to be in optical communication with the first opening. ### Claim 15 (depends on 14) The OES device of claim 14, wherein the rotation module is configured to be positioned at a first angle to transmit a part of the plasma light coming from the chamber to the first opening, and the rotation module is configured to rotate by a second angle to transmit a part of the plasma light coming from the chamber to the first opening. ### Claim 16 (depends on 15) The OES device of claim 15, wherein the first opening has a semicircular shape. ### Claim 17 (depends on 15) The OES device of claim 15, wherein the rotation module is configured to be positioned at the first angle to monitor the plasma light coming from a first area of the chamber, and wherein the rotation module is configured to rotate by the second angle to monitor the plasma light coming from a second area of the chamber. ### Claim 18 (depends on 17) The OES device of claim 17, wherein the OES device is configured to compare the plasma light of the first area and the plasma light of the second area monitored by the OES device with each other to determine a plasma uniformity in the chamber.