# US 10,770,227 B2 · Capacitor and board having the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,770,227 B2
- Document ID: US10770227B2
- Status: Granted
- Kind: B2
- Application number: 16/025,428
- Filed: 2018-07-02
- Published: 2019-05-23
- Granted: 2020-09-08
- Earliest claimed: 2017-11-22
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Seon Jae Mun; Jae Yeol Choi; Seung Heui Lee; Jong Ho Lee; Kyoung Jin Cha
- Web page: https://patentgrep.com/patent/US10770227B2

## CPC

- H01G 4/008: Selection of materials
- H01G 2/065: {for surface mounting, e.g. chip capacitors}
- H01G 4/2325: {characterised by the material of the terminals}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G 4/1227: {based on alkaline earth titanates}
- H01G 4/232: electrically connecting two or more layers of a stacked or rolled capacitor
- H05K 1/181: associated with surface mounted components
- H05K 3/3442: {having edge contacts, e.g. leadless chip capacitors, chip carriers}
- H05K 2201/10015: Non-printed capacitor
- H05K 2201/10159: Memory
- H05K 2201/10522: Adjacent components
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A capacitor includes a body including dielectric layers and internal electrodes; and external electrodes disposed on the body. The capacitor includes Sn, the Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.

## Claims

### Claim 1

A capacitor, comprising:
a body including dielectric layers and internal electrodes; and
external electrodes disposed on the body,
wherein the capacitor includes Sn, the Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein the Sn has an alpha particle emission rate equal to or less than 0.002 cph/cm2.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein the internal electrodes include the Sn.

### Claim 4 (depends on 3)

The capacitor of claim 3, wherein a content of the Sn included in the internal electrode is 0.1 to 10 wt% based on the entire internal electrode.

### Claim 5 (depends on 1)

The capacitor of claim 1, wherein the external electrode includes an electrode layer connected to the internal electrode and disposed on the body, a first plating layer formed on the electrode layer, and a second plating layer formed on the first plating layer.

### Claim 6 (depends on 5)

The capacitor of claim 5, wherein the second plating layer includes the Sn.

### Claim 7 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer includes the Sn.

### Claim 8 (depends on 1)

The capacitor of claim 1, wherein the external electrodes are disposed directly on the body, and
wherein at least one of the body or the external electrodes includes the Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.

### Claim 9

A board having a capacitor, comprising:
a printed circuit board having one surface on which an electrode pad is disposed; and
the capacitor mounted on the printed circuit board,
wherein the capacitor comprises a body including dielectric layers and internal electrodes, and external electrodes disposed on the body, and
wherein the capacitor includes Sn, the Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.

### Claim 10 (depends on 9)

The board having the capacitor of claim 9, wherein the external electrode of the capacitor is positioned on the electrode pad to come in contact with the electrode pad, and the external electrode and the electrode pad are connected to each other by solder including Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.

### Claim 11 (depends on 10)

The board having the capacitor of claim 10, wherein the Sn included in the solder has an alpha particle emission rate equal to or less than 0.002 cph/cm2.

### Claim 12 (depends on 9)

The board having the capacitor of claim 9, further comprising a semiconductor device disposed adjacent to the capacitor.

### Claim 13 (depends on 9)

The board having the capacitor of claim 9, wherein the Sn has an alpha particle emission rate equal to or less than 0.002 cph/cm2.

### Claim 14 (depends on 9)

The board having the capacitor of claim 9, wherein the internal electrodes include the Sn.

### Claim 15 (depends on 14)

The board having the capacitor of claim 14, wherein a content of the Sn included in the internal electrode is 0.1 to 10 wt% based on the entire internal electrode.

### Claim 16 (depends on 9)

The board having the capacitor of claim 9, wherein the external electrode includes an electrode layer connected to the internal electrode and disposed on the body, a first plating layer formed on the electrode layer, and a second plating layer formed on the first plating layer.

### Claim 17 (depends on 16)

The board having the capacitor of claim 16, wherein the second plating layer includes the Sn.

### Claim 18 (depends on 9)

The board having the capacitor of claim 9, wherein the dielectric layer includes the Sn.

### Claim 19 (depends on 9)

The board having the capacitor of claim 9, wherein the external electrodes are disposed directly on the body, and
wherein at least one of the body or the external electrodes includes the Sn having an alpha particle emission rate equal to or less than 0.02 cph/cm2.