# US 10,770,205 B2 · Method for manufacturing electronic component

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- Number: US 10,770,205 B2
- Document ID: US10770205B2
- Status: Granted
- Kind: B2
- Application number: 15/728,571
- Filed: 2017-10-10
- Published: 2018-02-15
- Granted: 2020-09-08
- Earliest claimed: 2013-09-25
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Haruhiko Mori; Hiroyuki Otsuna
- Web page: https://patentgrep.com/patent/US10770205B2

## CPC

- H01C 7/008: {Thermistors (H01C7/02 - H01C7/06 take precedence)}
- H01C 1/148: the terminals embracing or surrounding the resistive element (H01C1/142 takes precedence)
- H01C 7/18: comprising a plurality of layers stacked between terminals
- H01F 17/0013: {with stacked layers}
- H01F 17/04: with magnetic core
- H01G 4/2325: {characterised by the material of the terminals}
- H01G 4/248: the terminals embracing or surrounding the capacitive element, e.g. caps (H01G4/252 takes precedence)
- H01G 4/252: the terminals being coated on the capacitive element (H01G4/232 takes precedence)
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- Y10T 29/43: Electric condenser making
- Y10T 29/435: Solid dielectric type
- Y10T 29/49121: Beam lead frame or beam lead device
- Y10T 29/49124: On flat or curved insulated base, e.g., printed circuit, etc.
- H01C: RESISTORS
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method for manufacturing an electronic component including a step of providing an outer electrode that includes a step of providing a sintered layer containing a sintered metal, a step of providing an insulation layer containing an electric insulation material, and a step of providing a Sn-containing layer containing Sn. The sintered layer extends from each of end surfaces of an element assembly onto at least one main surface thereof. The insulation layer is directly provided on the sintered layer at each of the end surfaces so as to extend in a direction perpendicular or substantially perpendicular to a side surface of the element assembly, and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the sintered layer except for a portion of the sintered layer that is covered by the insulation layer, and constitutes another portion of the surface of the outer electrode.

## Claims

### Claim 1

A method for manufacturing an electronic component comprising the steps of:
preparing an element assembly in which inner electrodes are embedded and including a pair of main surfaces, a pair of side surfaces respectively connecting the main surfaces, and a pair of end surfaces respectively perpendicular or substantially perpendicular to the pair of main surfaces and the pair of side surfaces; and
providing an outer electrode on the element assembly so that the outer electrode is electrically connected with the inner electrodes; wherein
the step of providing the outer electrode includes a step of providing a sintered layer including a sintered metal, a step of providing an insulation layer including an electric insulation material, and a step of providing a Sn-containing layer including Sn;
in the step of providing the sintered layer, the sintered layer extends from each of the pair of end surfaces onto at least one of the pair of main surfaces so as to cover each of the pair of end surfaces;
in the step of providing the insulation layer, the insulation layer is directly provided on the sintered layer at each of the pair of end surfaces to extend in a direction perpendicular or substantially perpendicular to the pair of side surfaces so as to constitute a portion of a surface of the outer electrode; and
in the step of providing the Sn-containing layer, the Sn-containing layer is provided to cover the sintered layer except for a portion of the sintered layer that is covered by the insulation layer so as to constitute another portion of the surface of the outer electrode, and the Sn-containing layer covers a portion of the sintered layer on at least a portion of one of the pair of main surfaces and a portion of one of the pair of side surfaces of the element assembly.

### Claim 2 (depends on 1)

The method for manufacturing an electronic component according to claim 1, wherein in the step of providing the Sn-containing layer, the Sn-containing layer extends from each of the pair of end surfaces to the one of the pair of main surfaces.

### Claim 3 (depends on 2)

The method for manufacturing an electronic component according to claim 2, wherein
in the step of providing the insulation layer, an edge of the insulation layer is provided on one of the pair of end surfaces; and
in the step of providing the outer electrode, the outer electrode is provided so that none of the inner electrodes are located in a virtual plane which links a position of the edge of the insulation layer on the one of the pair of end surfaces with a position of a tip of the outer electrode on one of the pair of main surfaces in a shortest distance.

### Claim 4 (depends on 2)

The method for manufacturing an electronic component according to claim 2, wherein in the step of providing the insulation layer, the insulation layer is directly provided on the sintered layer at each of the pair of end surfaces so that at least a portion of the insulation layer is located between one of the pair of main surfaces and a position of an edge portion of the inner electrode closest to one of the pair of main surfaces in a direction perpendicular or substantially perpendicular to one of the pair of main surfaces.

### Claim 5 (depends on 1)

The method for manufacturing an electronic component according to claim 1, wherein
in the step of providing the sintered layer, the sintered layer is provided to extend from each of the pair of end surfaces onto each of the pair of side surfaces; and
in the step of providing the insulation layer, the insulation layer is provided directly on the sintered layer at each of the pair of side surfaces so as to extend in a direction perpendicular or substantially perpendicular to one of the pair of end surfaces.

### Claim 6 (depends on 1)

The method for manufacturing an electronic component according to claim 1, wherein
the step of providing the outer electrode further includes a step of providing a reinforcement layer containing Ni or Cu; and
in the step of providing the reinforcement layer, the reinforcement layer is provided between the sintered layer and the Sn-containing layer.

### Claim 7 (depends on 6)

The method for manufacturing an electronic component according to claim 6, wherein
the step of providing the outer electrode further includes a step of providing a base layer which is formed of a material different from a material of the reinforcement layer and contains Cu or Ni; and
in the step of providing the base layer, the base layer is provided between the sintered layer and the reinforcement layer.

### Claim 8 (depends on 1)

The method for manufacturing an electronic component according to claim 1, wherein the step of providing the sintered layer includes a step of baking; and
in the step of baking, a dielectric layer included in the element assembly and the sintered layer are baked at the same time.

### Claim 9 (depends on 1)

The method for manufacturing an electronic component according to claim 1, wherein the electronic component is one of a ceramic capacitor, a piezoelectric component, a thermistor, and an inductor.
