# US 10,770,161 B2 · Sense amplifier

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,770,161 B2
- Document ID: US10770161B2
- Status: Granted
- Kind: B2
- Application number: 16/211,524
- Filed: 2018-12-06
- Published: 2019-04-11
- Granted: 2020-09-08
- Earliest claimed: 2016-10-26
- Assignees: Mediatek Inc.
- Applicants: MEDIATEK Inc.
- Inventors: Chia-Wei Wang; Shu-Lin Lai; Yi-Te Chiu
- Web page: https://patentgrep.com/patent/US10770161B2

## CPC

- G11C 17/18: Auxiliary circuits, e.g. for writing into memory
- G11C 7/06: Sense amplifiers; Associated circuits {, e.g. timing or triggering circuits}
- G11C 7/067: {Single-ended amplifiers}
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A sense amplifier for reading a via Read-Only Memory (Via-ROM) is provided. The sense amplifier includes a read circuit, an adaptive keeper circuit and a leakage monitor circuit. The read circuit is connected to the via-ROM. The adaptive keeper circuit is connected to the read circuit. The leakage monitor circuit is connected to the adaptive keeper circuit for forming a current mirror, such that the adaptive keeper circuit compensates a read voltage of a memory cell whose via is opened when a bit-line leakage is happened.

## Claims

### Claim 1

A sense amplifier, for reading a via Read-Only Memory (Via-ROM), comprising:
a read circuit connected to the via-ROM;
an adaptive keeper circuit connected to the read circuit;
a leakage monitor circuit connected to the adaptive keeper circuit for forming a current mirror, such that the adaptive keeper circuit compensates a read voltage of a memory cell whose via is opened when a bit-line leakage is happened;
wherein the current mirror is formed by a part of the leakage monitor circuit and a part of the adaptive keeper circuit; and
another part of the leakage monitor circuit and the read circuit are substantially the same.

### Claim 2 (depends on 1)

The sense amplifier according to claim 1, wherein a leakage current of the leakage monitor circuit and a driving of the adaptive keeper circuit have a positive relationship.

### Claim 3 (depends on 1)

The sense amplifier according to claim 1, wherein a gate of a transistor of the leakage monitor circuit is connected to a gate of a transistor of the adaptive keeper circuit.

### Claim 4 (depends on 1)

The sense amplifier according to claim 1, wherein the leakage monitor circuit and the read circuit are substantially the same.

### Claim 5 (depends on 1)

The sense amplifier according to claim 1, wherein a number of dummy cells connected to the leakage monitor circuit is programmed.

### Claim 6

A sense amplifier, for reading a via Read-Only Memory (Via-ROM), comprising:
a read circuit connected to the via-ROM;
a hybrid keeper circuit connected to the read circuit, wherein the hybrid keeper circuit includes:
a static keeper circuit; and
an adaptive keeper circuit, wherein the static keeper circuit and the adaptive keeper circuit are connected in parallel; and
a leakage monitor circuit connected to the adaptive keeper circuit for forming a current mirror, such that the adaptive keeper circuit compensates a read voltage of a memory cell whose via is opened when a bit-line leakage is happened.

### Claim 7 (depends on 6)

The sense amplifier according to claim 6, wherein a driving of the static keeper circuit is less than a driving of the adaptive keeper circuit.

### Claim 8 (depends on 6)

The sense amplifier according to claim 6, wherein a leakage current of the leakage monitor circuit and a driving of the adaptive keeper circuit have a positive relationship.

### Claim 9 (depends on 6)

The sense amplifier according to claim 6, wherein a gate of a transistor of the leakage monitor circuit is connected to a gate of a transistor of the adaptive keeper circuit.

### Claim 10 (depends on 6)

The sense amplifier according to claim 6, wherein the leakage monitor circuit and the read circuit are substantially the same.

### Claim 11 (depends on 6)

The sense amplifier according to claim 6, wherein a number of dummy cells connected to the leakage monitor circuit is programmed.

### Claim 12

A sense amplifier, for reading a via Read-Only Memory (Via-ROM), comprising:
a read circuit connected to the via-ROM;
a static keeper circuit connected to the read circuit;
a leakage monitor circuit connected to the read circuit for forming a current mirror, such that a read voltage of a memory cell whose via is opened is compensated when a bit-line leakage is happened;
wherein the current mirror is formed by a part of the leakage monitor circuit and a part of the read circuit; and
another part of the leakage monitor circuit and another part of the read circuit are substantially the same.

### Claim 13 (depends on 12)

The sense amplifier according to claim 12, wherein a gate of a transistor of the leakage monitor circuit is connected to a gate of a transistor of the read circuit.

### Claim 14 (depends on 12)

The sense amplifier according to claim 12, wherein the leakage monitor circuit and the read circuit are substantially the same.

### Claim 15 (depends on 12)

The sense amplifier according to claim 12, wherein a number of dummy cells connected to the leakage monitor circuit is programmed.