# US 10,770,160 B2 · Programmable resistive memory formed by bit slices from a standard cell library > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,160 B2 - Document ID: US10770160B2 - Status: Granted - Kind: B2 - Application number: 16/191,429 - Filed: 2018-11-14 - Published: 2019-05-30 - Granted: 2020-09-08 - Earliest claimed: 2017-11-30 - Assignees: Attopsemi Technology Co., LTD; Renesas Electronics Corporation - Applicants: Attopsemi Technology Co., LTD - Inventors: Shine C. Chung; Koji Nii - Web page: https://patentgrep.com/patent/US10770160B2 ## CPC - G11C 17/16: using electrically-fusible links - G06F 30/392: Floor-planning or layout, e.g. partitioning or placement - G11C 11/1675: {Writing or programming circuits or methods} - G11C 13/0069: {Writing or programming circuits or methods} - G11C 14/0081: {and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell} - G11C 14/009: {and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material} - G11C 17/18: Auxiliary circuits, e.g. for writing into memory - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites} - G11C: STATIC STORES (semiconductor memory devices H10B) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract Architecture, design, structure, layout, and method of forming a Programmable Resistive Device (PRD) memory in standard cell library are disclosed. The PRD memory has a plurality of PRD cells. At least one of the PRD cells can have a PRD element coupled to a first supply voltage line and coupled to a second supply voltage line through a program selector. The PRD cells reside in a standard cell library and following most of the standard cell design and layout guidelines. ## Claims ### Claim 1 A Programmable Resistive Device (PRD) memory integrated in an integrated circuit, the PRD memory comprising: a plurality of PRD cells; and at least one of the plurality of PRD cells including at least: a PRD element, a program selector, the PRD element is coupled to a first supply voltage line and to the program selector, which is further coupled to a second supply voltage and/or one enable signal, and the PRD cell has at least one latch built-in as a sense amplifier, wherein the PRD cell is built from one or more basic cells in a standard cell library and follows standard cell design and layout guidelines associated with the standard cell library, wherein the PRD cell has an interface unit coupled to the other PRD cells, wherein the PRD memory is built with replica of the PRD cell with at least one peripheral cell and wherein the PRD element can be configured to be programmable by applying voltages to the first supply voltage line, the second supply voltage line and/or the enable signal to change resistance of the PRD element into a different logic state. ### Claim 2 (depends on 1) The PRD memory as recited in claim 1, wherein the PRD cell is designed and laid out using the one or more basic cells and in compliance with standard cell design and layout guidelines associated with the standard cell library. ### Claim 3 (depends on 1) The PRD memory as recited in claim 1, wherein the at least one of the PRD cells are designed and laid out following the standard cell guidelines in at least one of the properties: cell width, cell height, orientation, width, position, and metal schemes of routing channels and input/output ports. ### Claim 4 (depends on 1) The PRD memory as recited in claim 1, wherein the at least one of the plurality of PRD cells has an integer multiple of standard cell height but still has the same routing channels when multiple standard cells are placed together. ### Claim 5 (depends on 1) The PRD memory as recited in claim 1, wherein the at least one of the plurality of PRD cells are placed and merged with the other standard cells with at least one filler cell. ### Claim 6 (depends on 1) The PRD memory as recited in claim 1, wherein the PRD memory is constructed as shift registers based on at least one PRD cells. ### Claim 7 (depends on 1) The PRD memory as recited in claim 1, wherein the at least one of the plurality of PRD cell in the PRD memory has at least one decoder for random accessibility. ### Claim 8 (depends on 1) The PRD memory as recited in claim 1, wherein a portion or all of the plurality of PRD cells can be read by asserting a read enable signal. ### Claim 9 (depends on 1) The PRD memory as recited in claim 1, wherein the at least one of the PRD cells can be selected for programming randomly. ### Claim 10 (depends on 1) The PRD memory as recited in claim 1, wherein the PRD memory stores data to tune the performance of an integrated circuit or trim device parameters in an integrated circuit. ### Claim 11 (depends on 1) The PRD memory as recited in claim 1, wherein the PRD element has at least one of the OTP element, RRAM thin film, PCRAM thin film, or MTJ in an MRAM. ### Claim 12 (depends on 11) The PRD memory as recited in claim 11, wherein the OTP element has at least one of the electrical fuse constructed from at least one of silicided polysilicon, silicide, local interconnect, metal, metal gate, thermally isolated silicon, FinFET, or interconnect between FinFET. ### Claim 13 An electronic system, comprising: a processor; and a PRD memory operatively connected to the processor, the PRD memory includes at least a plurality of PRD cells for providing data storage, at least one of the plurality of PRD cells comprising: a PRD element, a program selector, the PRD element is coupled to a first supply voltage line and to the program selector, which is further coupled to a second supply voltage and/or one enable signal, and the PRD cell has at least one latch built-in as a sense amplifier, wherein the PRD cell is built from basic cell in a standard cell library and in accordance with design and layout guidelines of the standard cell library, wherein the PRD cell has at least one interface unit coupled to the other PRD cells, and wherein the PRD element is configured to be programmable by applying voltages to the first supply voltage line, the second supply voltage line and/or the enable signal to change resistance into a different logic state. ### Claim 14 (depends on 13) The electronic system as recited in claim 13, wherein the PRD cell is designed and laid out design and layout guidelines with respect to at least one property selected from the group of: cell width, cell height, orientation, width, position, and metal schemes of routing channels and input/output ports. ### Claim 15 (depends on 13) The electronic system as recited in claim 13, wherein the PRD element has at least one of the OTP element, RRAM thin film, PCRAM thin film, or MTJ in an MRAM. ### Claim 16 (depends on 15) The electronic system as recited in claim 15, wherein the OTP element has at least one electrical fuse. ### Claim 17 A method for placing a PRD memory in an integrated circuit design, the method comprising: placing a plurality of cells into the integrated circuit design, at least one of the cells comprising a plurality of PRD cells, and at least one of the PRD cells including at least: a PRD element, a program selector, at least one sense amplifier, and at least one interface unit, the PRD element being coupled to a first supply voltage line and to the program selector, the program selector being coupled to a second supply voltage and/or one enable signal, and the at least one interface unit being coupled to the other PRD cells, wherein the PRD element is built from one or more basic cells in a standard cell library while following design and layout guidelines associated with the standard cell library; and wherein the PRD element is configured to be programmable by applying voltages to the first supply voltage lines, the second supply voltage line and/or the enable signal to change resistance of the PRD element into a different logic state. ### Claim 18 (depends on 17) A method as recited in claim 17, wherein the PRD element is designed and laid out following the design and layout guidelines, including compliance with at least one of: cell height, cell width, orientation, metal scheme, or routing channel. ### Claim 19 (depends on 17) A method as recited in claim 17, wherein the generating the PRD memory includes at least one of: (a) writing an RTL code to generate the PRD memory, (b) synthesizing RTL code with at least one basic cell from the standard cell library, (c) placing the at least one basic cell obtaining from the standard cell library based on synthesized RTL code, and (d) routing the at least one basic cell to perform a desired function. ### Claim 20 (depends on 17) A method as recited in claim 17, wherein the PRD element includes at least one of: OTP element, RRAM thin film, PCRAM thin film, or Magnetic Tunnel Junction in an MRAM.