# US 10,770,149 B2 · Non-volatile memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,149 B2 - Document ID: US10770149B2 - Status: Granted - Kind: B2 - Application number: 16/048,786 - Filed: 2018-07-30 - Published: 2019-05-09 - Granted: 2020-09-08 - Earliest claimed: 2017-11-08 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Ji-yeon Shin; Jeong-don Ihm; Byung-hoon Jeong; Jung-june Park - Web page: https://patentgrep.com/patent/US10770149B2 ## CPC - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 16/30: Power supply circuits - G11C 16/32: Timing circuits - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A non-volatile memory device includes an output driver to output a data signal. The output driver includes a pull-up driver and a pull-down driver. The pull-up driver includes a first pull-up driver having a plurality of P-type transistors and a second pull-up driver having a plurality of N-type transistors. The pull-down driver includes a plurality of N-type transistors. One or more power supply voltages having different voltage levels are selectively applied to the pull-up driver. A first power supply voltage is applied to the first pull-up driver, and a second power supply voltage is applied to the second pull-up driver. ## Claims ### Claim 1 An output driver circuit, comprising: a first pull-up driver having a plurality of P-type transistors; a second pull-up driver having a plurality of N-type transistors; a first pull-down driver including a plurality of N-type transistors; and a second pull-down driver including a plurality of P-type transistors, wherein: a first power supply voltage is applied to the first pull-up driver, a second power supply voltage is applied to the second pull-up driver, outputs of the first pull-up driver and the second pull-up driver are coupled together for generating a current at a common output node, the first pull-down driver and the second pull-down driver are each coupled to the common output node, and the first pull-up driver, the second pull-up driver, the first pull-down driver, and the second pull-down driver are selectively operated based on a frequency of a clock signal input to the data output circuit. ### Claim 2 (depends on 1) The output driver circuit as claimed in claim 1, wherein the first power supply voltage is different from the second power supply voltage. ### Claim 3 (depends on 1) The output driver circuit as claimed in claim 1, wherein the first power supply voltage is equal to the second power supply voltage. ### Claim 4 (depends on 1) The output driver circuit as claimed in claim 1, wherein at least one of the first pull-up driver and the second pull-up driver is to operate based on voltage levels of the first power supply voltage and the second power supply voltage, respectively. ### Claim 5 (depends on 4) The output driver circuit as claimed in claim 4, wherein the plurality of P-type transistors of the first pull-up driver are to be turned OFF based on the voltage level of the first power supply voltage. ### Claim 6 (depends on 1) The output driver circuit as claimed in claim 1, wherein the plurality of P-type transistors of the first pull-up driver are to be turned OFF based on frequency of the pull-up operating signal. ### Claim 7 A non-volatile memory device, comprising: a voltage generator; an output driver configured to output a data signal; and an operating signal generator configured to generate a plurality of operating signals for operating the output driver, wherein: the output driver includes: a pull-up driver including a first pull-up driver having only P-type transistors and a second pull-up driver having only N-type transistors; and a pull-down driver coupled to an output of the Dull-up driver and having a plurality of N-type transistors, the voltage generator is configured to supply a first power supply voltage to the P-type transistors of the pull-up driver, and supply a second power supply voltage to the N-type transistors of the pull-up driver, the first power supply voltage and the second power supply voltage having different voltage levels, and the operating signal generator is configured to receive information regarding the first power supply voltage and the second power supply voltage supplied to the pull-up driver. ### Claim 8 (depends on 7) The non-volatile memory device as claimed in claim 7, wherein the operating signal generator is configured to generate the plurality of operating signals based on the information corresponding to the first power supply voltage and the second power supply voltage. ### Claim 9 (depends on 8) The non-volatile memory device as claimed in claim 8, wherein: the operating signal generator is configured to generate at least one operating signal to be transmitted to the first pull-up driver, from among the plurality of operating signals to be toggled between a high level and a low level, and the operating signal generator is configured to generate at least one operating signal to be transmitted to the second pull-up driver, from among the plurality of operating signals to be toggled between the high level and the low level. ### Claim 10 (depends on 7) The non-volatile memory device as claimed in claim 7, wherein: the operating signal generator is configured to generate operating signals to be respectively transmitted to the P-type transistors in the first pull-up driver, from among the plurality of operating signals to have a high level, the operating signal generator is configured to generate at least one operating signal to be transmitted to the second pull-up driver, from among the plurality of operating signals to be toggled between the high level and a low level, and a voltage level of the high level of the at least one of operating signal to be transmitted to the second pull-up driver is equal to the voltage level of the second power supply voltage. ### Claim 11 (depends on 7) The non-volatile memory device as claimed in claim 7, wherein the operating signal generator is configured to receive a clock signal and generate the plurality of operating signals based on a frequency of the clock signal. ### Claim 12 (depends on 11) The non-volatile memory device as claimed in claim 11, wherein: the operating signal generator is configured to generate at least one operating signal to be transmitted to the first pull-up driver, from among the plurality of operating signals to be toggled between a high level and a low level, and the operating signal generator is configured to generate at least one operating signal to be transmitted to the second pull-up driver, from among the plurality of operating signals to be toggled between the high level and the low level. ### Claim 13 (depends on 7) The non-volatile memory device as claimed in claim 7, further comprising another pull-down driver that includes a plurality of P-type transistors. ### Claim 14 A non-volatile memory device, comprising: an output driver configured to output a data signal; and an operating signal generator configured to generate a plurality of operating signals to operate the output driver, wherein; the output driver includes: a pull-up driver including a first pull-up driver having a plurality of P-type transistors and a second pull-up driver having a plurality of N-type transistors; and a pull-down driver including a first pull-down driver having a plurality of P-type transistors and a second pull-down driver having a plurality of N-type transistors, outputs of the first pull-up driver and the second pull-up driver are coupled together for generating a current at a common output node, the first pull-down driver and the second pull-down driver are each coupled to the common output node, and the operating signal generator is configured to receive information regarding a first power supply voltage and a second power supply voltage supplied to the pull-up driver. ### Claim 15 (depends on 14) The non-volatile memory device as claimed in claim 14, wherein the operating signal generator is configured to generate a pull-up operating signal to selectively operate at least one of the first pull-up driver and the second pull-up driver and to generate a pull-down operating signal to selectively operate at least one of the first pull-down driver and the second pull-down driver. ### Claim 16 (depends on 15) The non-volatile memory device as claimed in claim 15, wherein the operating signal generator is configured to selectively operate at least one of the first pull-up driver and the second pull-up driver based on a voltage level of a power supply voltage applied to the pull-up driver. ### Claim 17 (depends on 14) The non-volatile memory device as claimed in claim 14, wherein the operating signal generator is configured to generate a pull-up operating signal to operate the first pull-up driver and the second pull-up driver and to generate a pull-down operating signal to operate the first pull-down driver and the second pull-down driver.