# US 10,770,139 B2 · Variable resistance memory device and operating method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,770,139 B2 - Document ID: US10770139B2 - Status: Granted - Kind: B2 - Application number: 15/968,038 - Filed: 2018-05-01 - Published: 2018-11-29 - Granted: 2020-09-08 - Earliest claimed: 2017-05-25 - Assignees: Korea Research Institute of Chemical Technology - Applicants: Korea Research Institute of Chemical Technology - Inventors: Gun Hwan Kim; Young Kuk Lee; Taek Mo Chung; Bo Keun Park; Jeong Hwan Han; Ji Woon Choi - Web page: https://patentgrep.com/patent/US10770139B2 ## CPC - G11C 13/0069: {Writing or programming circuits or methods} - G11C 11/56: using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency - G11C 11/5628: {Programming or writing circuits; Data input circuits} - G11C 11/5678: {using amorphous/crystalline phase transition storage elements} - G11C 13/004: {Reading or sensing circuits or methods} - G11C 13/0064: {Verifying circuits or methods} - H10B 63/00: Resistance change memory devices, e.g. resistive RAM [ReRAM] devices - G11C 13/0038: {Power supply circuits} - G11C 2013/0078: {Write using current through the cell} - G11C 2213/31: Material having complex metal oxide, e.g. perovskite structure - G11C 2213/32: Material having simple binary metal oxide structure - G11C 2213/34: Material includes an oxide or a nitride - H10N 70/883: {Oxides or nitrides} - H10N 70/8833: {Binary metal oxides, e.g. TaOx} - H10N 70/8836: {Complex metal oxides, e.g. perovskites, spinels} - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic. ## Claims ### Claim 1 A method for operating a variable resistance memory device, the method comprising: programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, the programming being performed in a set operation and a reset operation, wherein the multi-bit variable resistance memory cell is programmed from a first resistance state to a second resistance state in the set operation and the multi-bit variable resistance memory cell is programmed from a third resistance state to a fourth resistance state in the reset operation, wherein a resistance of the first resistance state is higher than a resistance of the second resistance state while a resistance of the third resistance state is lower than a resistance of the fourth resistance state, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell in the set operation includes a first region that does not exhibit a distinguishable hysteresis characteristic and a second region that exhibits both a hysteresis characteristic and a self-compliance characteristic, the current-voltage curve in the set operation in the second region being more gradual than the current-voltage curve in the set operation in the first region such that an increasement of a current per an increment of the applied program voltage pulses in the second region is greater than an increasement of a current per an increment of the applied program voltage pulses in the first region, wherein the program voltage pulses are applied to the multi-bit variable resistance memory cell in the second region of the current-voltage curve of the multi-bit variable resistance memory cell, wherein the variable resistance memory cell includes a variable resistance element and a first resistor coupled to the variable resistance element, wherein the self-compliance characteristic is generated by the variable resistance element and the first resistor. ### Claim 2 (depends on 1) The method of claim 1, wherein the multi-bit variable resistance memory cell exhibits a random characteristic in which the multi-bit variable resistance memory cell is set to different resistance values by the program voltage pulses during a plurality of reset-set cycles. ### Claim 3 (depends on 1) The method of claim 1, wherein the programming includes performing a verify read operation on the multi-bit variable resistance memory cell, wherein the verify read operation is determined as program pass when a read current flowing through the multi-bit variable resistance memory cell is larger than a minimum current limit and is smaller than a maximum current limit. ### Claim 4 (depends on 3) The method of claim 3, wherein, when the read current is larger than the maximum current limit, the multi-bit variable resistance memory cell is reset, and the program voltage pulses are then re-applied. ### Claim 5 (depends on 3) The method of claim 3, wherein a voltage applied to the multi-bit variable resistance memory cell during the verify read operation has a phase opposite to that of the program voltage pulses. ### Claim 6 (depends on 3) The method of claim 3, wherein the read current is 100 μA or less in the verify read operation. ### Claim 7 A variable resistance memory device comprising: a variable resistance memory cell configured to store multi-bit data; a voltage generator configured to generate sequentially increased program voltage pulses, based on the multi-bit data; a program circuit configured to perform a program operation on the variable resistance memory cell by applying the program voltage pulses to the variable resistance memory cell, the programming operation being performed in a set operation and a reset operation, wherein the multi-bit variable resistance memory cell is programmed from a first resistance state to a second resistance state in the set operation and the multi-bit variable resistance memory cell is programmed from a third resistance state to a fourth resistance state in the reset operation, wherein a resistance of the first resistance state is higher than a resistance of the second resistance state while a resistance of the third resistance state is lower than a resistance of the fourth resistance state; and a read circuit configured to perform a verify read operation on the variable resistance memory cell, wherein a current-voltage curve of the variable resistance memory cell in the set operation includes a first region that does not exhibit a distinguishable hysteresis characteristic and a second region that exhibits both a hysteresis and a self-compliance characteristic, the current-voltage curve in the set operation in the second region being more gradual than the current-voltage curve in the set operation in the first region such that an increasement of a current per an increment of the applied program voltage pulses in the second region is greater than an increasement of a current per an increment of the applied program voltage pulses in the first region, wherein the program voltage pulses are applied to the variable resistance memory cell in the second region of the current-voltage curve of the variable resistance memory cell, wherein the read circuit is configured to determine the verify read operation as program pass when a read current of the variable resistance memory cell is larger than a minimum current limit and is smaller than a maximum current limit, wherein the variable resistance memory cell includes a variable resistance element and a first resistor coupled to the variable resistance element, wherein the self-compliance characteristic is generated by the variable resistance element and the first resistor. ### Claim 8 (depends on 7) The variable resistance memory device of claim 7, wherein the variable resistance memory cell is programmed to any one of a plurality of set states in response to the program voltage pulses, wherein the read current in a set state having the smallest resistance value among the plurality of set states is smaller than 100 μA. ### Claim 9 (depends on 7) The variable resistance memory device of claim 7, wherein the multi-bit data has four bits. ### Claim 10 A variable resistance memory device comprising: a variable resistance memory cell configured to store multi-bit data; a voltage generator configured to generate sequentially increased program voltage pulses, based on the multi-bit data; a program circuit configured to perform a program operation on the variable resistance memory cell by applying the program voltage pulses to the variable resistance memory cell, the programming operation being performed in a set operation and a reset operation, wherein the multi-bit variable resistance memory cell is programmed from a first resistance state to a second resistance state in the set operation and the multi-bit variable resistance memory cell is programmed from a third resistance state to a fourth resistance state in the reset operation, wherein a resistance of the first resistance state is higher than a resistance of the second resistance state while a resistance of the third resistance state is lower than a resistance of the fourth resistance state; and a read circuit configured to perform a verify read operation on the variable resistance memory cell, wherein a current-voltage curve of the variable resistance memory cell in the set operation includes a first region that does not exhibit a distinguishable hysteresis characteristic and a second region that exhibits both a hysteresis and a self-compliance characteristic, the current-voltage curve in the set operation in the second region being more gradual than the current-voltage curve in the set operation in the first region such that an increasement of a current per an increment of the applied program voltage pulses in the second region is greater than an increasement of a current per an increment of the applied program voltage pulses in the first region, wherein the program voltage pulses are applied to the variable resistance memory cell in the second region of the current-voltage curve of the variable resistance memory cell, wherein the read circuit is configured to determine the verify read operation as program pass when a read current of the variable resistance memory cell is larger than a minimum current limit and is smaller than a maximum current limit, wherein the variable resistance memory cell includes a variable resistance element and a first resistor or transistor coupled to the variable resistance element, wherein the self-compliance characteristic is generated by the variable resistance element and the first resistor or the transistor. ### Claim 11 (depends on 1) The method of claim 1, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation both exhibiting the self-compliance characteristic, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation are asymmetric. ### Claim 12 (depends on 7) The variable resistance memory device of claim 7, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation both exhibiting the self-compliance characteristic, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation are asymmetric. ### Claim 13 (depends on 10) The variable resistance memory device of claim 10, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation both exhibiting the self-compliance characteristic, wherein the current-voltage curve of the multi-bit variable resistance memory cell in the set operation and the current-voltage curve of the multi-bit variable resistance memory cell in the reset operation are asymmetric.