# US 10,768,468 B2 · Display substrate having wide-color gamut, its manufacturing method, display panel and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,768,468 B2 - Document ID: US10768468B2 - Status: Granted - Kind: B2 - Application number: 15/690,022 - Filed: 2017-08-29 - Published: 2018-07-12 - Granted: 2020-09-08 - Earliest claimed: 2017-01-10 - Assignees: Boe Technology Group Co., Ltd.; Fuzhou Boe Optoelectronics Technology Co., Ltd. - Applicants: Boe Technology Group Co., Ltd.; Fuzhou BOE Optoelectronics Technology Co., Ltd. - Inventors: Xibin Shao; Dongxi Li; Huibin Guo; Jianfeng Yuan - Web page: https://patentgrep.com/patent/US10768468B2 ## CPC - G02F 1/133514: {Colour filters} - G02B 5/201: {in the form of arrays} - G02B 5/207: {comprising semiconducting materials} - G02B 5/223: {containing organic substances, e.g. dyes, inks or pigments} - G02F 1/133509: {Filters, e.g. light shielding masks} - H10D 86/0212: {comprising manufacture, treatment or coating of substrates} - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/133521: {Interference filters} - G02F 1/133624: {characterised by their spectral emissions} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present disclosure provides a display substrate and a method for manufacturing the same, a display panel and a display device. The display substrate includes a base substrate; and a composite film structure formed on the base substrate and composed of at least two thin films having different refractive indexes, wherein the composite film structure is capable of absorbing light with a wavelength in a predetermined wavelength range, and the predetermined wavelength range is located between two adjacent peaks of visible light waves. ## Claims ### Claim 1 A display substrate, comprising: a base substrate; and a composite film structure formed on the base substrate and composed of at least two thin films having different refractive indexes, wherein the composite film structure is configured to absorb light with a wavelength in a predetermined wavelength range, and the predetermined wavelength range is located between two adjacent peaks of visible light waves, and wherein the composite film structure comprises a silicon dioxide thin film and a silicon nitride thin film superposed one on another, the silicon nitride thin film completely overlaps with the silicon dioxide thin film and is in direct physical contact with the silicon dioxide thin film, the silicon nitride thin film has a thickness between 450 and 495 angstroms, the silicon dioxide thin film has a thickness between 1800 and 2200 angstroms, and the silicon dioxide has a refractive index of 1.4 and the silicon nitride has a refractive index of 1.8 such that the composite film structure is able to absorb light having a wavelength near 580 nm. ### Claim 2 (depends on 1) The display substrate according to claim 1, wherein the silicon nitride thin film has a thickness of 450 angstroms and the silicon dioxide thin film has a thickness of 2000 angstroms. ### Claim 3 (depends on 1) The display substrate according to claim 1, wherein the base substrate has a first surface which is a light-entering side of the display substrate, and the composite film structure is provided on the first surface. ### Claim 4 (depends on 1) The display substrate according to claim 1, wherein the display substrate is an array substrate or a color filter substrate. ### Claim 5 (depends on 1) A display panel, comprising the display substrate according to claim 1, and an opposed substrate arranged opposite to the display substrate to form a cell. ### Claim 6 (depends on 5) The display panel according to claim 5, wherein the display substrate is one of an array substrate and a color filter substrate, and the opposed substrate is the other of the array substrate and the color filter substrate. ### Claim 7 (depends on 5) A display device, comprising a backlight and the display panel according to claim 5, wherein the opposed substrate is located at a side of the display substrate facing away from the backlight. ### Claim 8 (depends on 5) The display panel according to claim 5, wherein the silicon nitride thin film has a thickness of 450 angstroms and the silicon dioxide thin film has a thickness of 2000 angstroms. ### Claim 9 (depends on 1) The display substrate according to claim 1, wherein the silicon nitride thin film is provided on the base substrate and the silicon dioxide thin film is provided on a side of the silicon nitride thin film away from the base substrate. ### Claim 10 A method for manufacturing a display substrate, comprising: providing a base substrate; and forming, on the base substrate, a composite film structure composed of at least two thin films having different refractive indexes, wherein the composite film structure is configured to absorb light with a wavelength in a predetermined wavelength range, and the predetermined wavelength range is located between two adjacent peaks of visible light waves, and wherein the composite film structure comprises a silicon dioxide thin film and a silicon nitride thin film superposed one on another, the silicon nitride thin film completely overlaps with the silicon dioxide thin film and is in direct physical contact with the silicon dioxide thin film, the silicon nitride thin film has a thickness between 450 and 495 angstroms, the silicon dioxide thin film has a thickness between 1800 and 2200 angstroms, and the silicon dioxide has a refractive index of 1.4 and the silicon nitride has a refractive index of 1.8 such that the composite film structure is able to absorb light having a wavelength near 580 nm. ### Claim 11 (depends on 10) The method according to claim 10, further comprising: forming the composite film structure on a first surface of the base substrate, wherein the first surface is a light-entering side of the display substrate; and forming a thin film transistor array on a second surface of the base substrate facing away from the first surface, wherein the display substrate is an array substrate. ### Claim 12 (depends on 11) The method according to claim 11, wherein the forming the composite film structure on the first surface of the base substrate comprises: depositing a silicon nitride thin film with a thickness between 405 and 495 angstroms on the first surface; and depositing a silicon dioxide thin film with a thickness between 1800 and 2200 angstroms on the silicon nitride thin film.