# US 10,768,137 B2 · Gas detecting sensor

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- Number: US 10,768,137 B2
- Document ID: US10768137B2
- Status: Granted
- Kind: B2
- Application number: 16/346,592
- Filed: 2017-11-02
- Published: 2019-08-22
- Granted: 2020-09-08
- Earliest claimed: 2016-11-02
- Assignees: LG Chem, Ltd.; Korea University Research and Business Foundation
- Applicants: LG Chem, Ltd.; Korea University Research and Business Foundation
- Inventors: Kwang Seob Jeong; Hang Beum Shin; Dong Sun Choi; Bit Na Yoon; Ju Yeon Jeong
- Web page: https://patentgrep.com/patent/US10768137B2

## CPC

- G01N 27/4141: {specially adapted for gases}
- G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires}
- G01N 33/004: {CO or CO2}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A gas detecting sensor including a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode, provided on the insulating layer, respectively, an n-type channel provided between the source electrode and the drain electrode, and a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target gas molecule.

## Claims

### Claim 1

A gas detecting sensor comprising:
a substrate;
a gate electrode provided on the substrate;
an insulating layer provided on the gate electrode;
a source electrode and a drain electrode, provided on the insulating layer, respectively;
an n-type channel provided between the source electrode and the drain electrode; and
a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target gas molecule.

### Claim 2 (depends on 1)

The gas detecting sensor according to claim 1,
wherein the quantum dot layer comprises colloidal quantum dots.

### Claim 3 (depends on 1)

The gas detecting sensor according to claim 1,
wherein the quantum dot layer comprises a semiconductor compound of Group II-VI, a semiconductor compound of Group III-V, a semiconductor compound of Group IV-VI, a semiconductor compound of Group IV or a combination thereof.

### Claim 4 (depends on 3)

The gas detecting sensor according to claim 3,
wherein the quantum dot layer comprises one or more compounds selected from the group consisting of AuS, AuSe, AuTe, AgS, AgSe, AgTe, AgO, CuS, CuSe, CuTe, CuO, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, AuSeS, AuSeTe, AuSTe, AgSeS, AgSeTe, AgSTe, CuSeS, CuSeTe, CuSTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, AuAgS, AuAgSe, AuAgTe, AuCuS, AuCuSe, AuCuTe, AuZnS, AuZnSe, AuZnTe, AuCdS, AuCdSe, AuCdTe, AuHgS, AuHgSe, AuHgTe, AgZnS, AgZnSe, AgZnTe, AgCuS, AgCuSe, AgCuTe, AgCdS, AgCdSe, AgCdTe, AgHgS, AgHgSe, AgHgTe, CuZnS, CuZnSe, CuZnTe, CuCdS, CuCdSe, CuCdTe, CuHgS, CuHgSe, CuHgTe, ZnCdS, ZnCdSe, ZnCdTe, ZnHgS, ZnHgSe, ZnHgTe, CdHgS, CdHgSe, CdHgTe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe; GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC and SiGe.

### Claim 5 (depends on 1)

The gas detecting sensor according to claim 1,
wherein the quantum dot layer comprises ligand-substituted quantum dots.

### Claim 6 (depends on 5)

The gas detecting sensor according to claim 5,
wherein the ligand-substituted quantum dots are substituted with at least one of an organic ligand or an inorganic ligand.

### Claim 7 (depends on 1)

The gas detecting sensor according to claim 1,
wherein the n-type channel is an n-type material selected from the group consisting of IGZO, ZnO, ZTO, IZO, IHZO, AlN, InN, GaN and InGaN.

### Claim 8

A gas detecting sensor comprising:
a substrate;
a gate electrode provided on the substrate;
an insulating layer provided on the gate electrode;
a source electrode and a drain electrode, provided on the insulating layer, respectively; and
a quantum dot layer provided on the insulating layer, provided so as to electrically connect the source electrode and the drain electrode, and provided so as to have electronic transition energy capable of resonating with vibration energy of a target gas molecule.