# US 10,767,277 B2 · ScAIMgO4 single crystal substrate and method for producing the same

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- Number: US 10,767,277 B2
- Document ID: US10767277B2
- Status: Granted
- Kind: B2
- Application number: 16/356,790
- Filed: 2019-03-18
- Published: 2019-09-19
- Granted: 2020-09-08
- Earliest claimed: 2018-03-19
- Assignees: Panasonic Corporation
- Applicants: Panasonic Corporation
- Inventors: Kentaro Miyano; Naoto Yanagita; Naoya Ryoki; Takehiro Asahi; Masaki Nobuoka
- Web page: https://patentgrep.com/patent/US10767277B2

## CPC

- C30B 29/22: Complex oxides
- C30B 15/14: Heating of the melt or the crystallised materials
- C30B 15/20: Controlling or regulating (controlling or regulating in general G05)
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A ScAlMgO4 single crystal substrate having less collapse of crystal orientation, and a method for producing the single crystal substrate. A ScAlMgO4 single crystal substrate is provided, wherein, when a center of the substrate is designated as coordinates (0,0) and a measurement beam width is set to 1 [mm]×7 [mm] to conduct analysis according to an X-ray diffraction method at respective coordinate positions of (x−m,0) to (xm,0) at an interval of 1 [mm] in an x-axis direction and (0,y−n) to (0,yn) at an interval of 1 mm in a y-axis direction, wherein m and n are each an integer falling within the range so that the measurement beam is not stuck out from the substrate, a worst value of a full width at half maximum of a rocking curve at each of the coordinate positions is less than 20 [sec.].

## Claims

### Claim 1

A ScAlMgO4 single crystal substrate wherein, when a center of the substrate is designated as coordinates (0,0) and a measurement beam width is set to 1 [mm]×7 [mm] to conduct analysis according to an X-ray diffraction method at respective coordinate positions of (x−m,0) to (xm,0) at an interval of 1 [mm] in an x-axis direction and (0,y−n) to (0,yn) at an interval of 1 mm in a y-axis direction, wherein m and n are each an integer falling within the range so that the measurement beam is not stuck out from the substrate, a worst value of a full width at half maximum of a rocking curve at each of the coordinate positions is less than 20 [sec.].

### Claim 2 (depends on 1)

The ScAlMgO4 single crystal substrate according to claim 1, wherein the substrate is in a size having a diameter of 20 mm or more.

### Claim 3 (depends on 1)

A method for producing the ScAlMgO4 single crystal substrate of claim 1, in which a ScAlMgO4 single crystal is produced by conduction pulling, with a seed crystal being in contact with a melt in a crucible, wherein
a product of a crystal growth rate d represented by the following Expression 1, and a one-third power of a diameter of a ScAlMgO4 single crystal to be prepared, is 2.6 or more and less than 3.0:
Crystal growth rate d=c+(c×b2×q)/(a2×p) (Expression 1)
wherein a represents an inner diameter of the crucible, b represents a diameter of the ScAlMgO4 single crystal, c represents a pulling rate, p represents a liquid density of ScAlMgO4, and q represents a solid density of ScAlMgO4.