Enhanced adhesive materials and processes for 3D applications
AssigneeInternational Business Machines Corporation
InventorsJames L. Hedrick, Robert Dennis Miller, Deborah Ann Neumayer, Sampath Purushothaman, Mary E. Rothwell, Willi Volksen, Roy R. Yu
Life of this patent
Estimating the term…
Abstract
The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.
Claims20
A method of making a polymer based composite system for an electronic device, comprising:
- forming a dielectric layer over a device sublaminate;
- depositing metal catalyst nanoparticles at a plurality of sites on a top surface of the dielectric layer;
- growing a plurality of carbon nanotubes over the device sublaminate at the plurality of sites to a uniform length and in a vertical growth direction, thereby causing the metal catalyst nanoparticles to be positioned at top portions of the carbon nanotubes;
- backfilling the plurality of carbon nanotubes and the metal catalyst nanoparticles with a polymer base resin, the polymer base resin having a thermal stability of 350° Centigrade or above and being compatible with copper, the plurality of carbon nanotubes and the polymer base resin forming a composite layer;
- removing an upper portion of the polymer base resin, thereby causing the polymer base resin to have a thickness substantially equal to the uniform length of the plurality of carbon nanotubes;
- and
- removing the metal catalyst nanoparticles.
A method of making a polymer based composite system for an electronic device, comprising:
- forming a dielectric layer over a device sublaminate comprising silicon and a metal contact embedded within the device sublaminate;
- depositing metal catalyst nanoparticles at a plurality of sites on a top surface of the dielectric layer;
- growing a plurality of carbon nanotubes over the device sublaminate at the plurality of sites to a uniform length and in a vertical growth direction;
- backfilling the plurality of carbon nanotubes with a polymer base resin, the polymer base resin having a thermal stability of 350° Centigrade or above and being compatible with copper, the plurality of carbon nanotubes and the polymer base resin forming a composite layer;
- and
- forming a vertical trench within the composite layer extending down to the metal contact.
Dependencies are inferred from the claim text.