# US 10,766,785 B2 · Method of arranging nanocrystals, method of producing nanocrystal structure, nanocrystal structure formation substrate, and method of manufacturing nanocrystal structure formation substrate

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- Number: US 10,766,785 B2
- Document ID: US10766785B2
- Status: Granted
- Kind: B2
- Application number: 15/518,957
- Filed: 2015-10-07
- Published: 2017-08-10
- Granted: 2020-09-08
- Earliest claimed: 2014-10-17
- Assignees: National Institute of Advanced Industrial Science and Technology
- Applicants: National Institute of Advanced Industrial Science and Technology
- Inventors: Ken-ichi Mimura; Kazumi Kato
- Web page: https://patentgrep.com/patent/US10766785B2

## CPC

- C01G 23/003: {Titanates (C01G23/001 takes precedence)}
- B82B 1/00: Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- C01F 11/00: Compounds of calcium, strontium, or barium (C01F7/00 takes precedence)
- C01G 23/006: {Alkaline earth titanates}
- C30B 7/10: by application of pressure, e.g. hydrothermal processes
- C30B 29/32: Titanates; Germanates; Molybdates; Tungstates
- C30B 29/60: characterised by shape
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01P 2004/03: obtained by SEM
- C01P 2004/04: obtained by TEM, STEM, STM or AFM
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- B82B: NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

A method of arranging nanocrystals is provided, which includes a first process of putting barium titanate nanocrystals and/or strontium titanate nanocrystals, and a nonpolar solvent into a container, a second process of collecting a supernatant liquid including the barium titanate nanocrystals and/or the strontium titanate nanocrystals from the container, and a third process of immersing a substrate having an uneven structure into the supernatant liquid, and pulling up the substrate so as to coat the surface of the uneven structure with the supernatant liquid by using a capillary phenomenon, and to arrange the nanocrystals on the uneven structure.

## Claims

### Claim 1

A method of arranging nanocrystals, comprising:
a first process of putting barium titanate nanocrystals and/or strontium titanate nanocrystals, and a nonpolar solvent into a container;
a second process of collecting a supernatant liquid including the barium titanate nanocrystals and/or the strontium titanate nanocrystals from the container; and
a third process of immersing a substrate having an uneven structure into the supernatant liquid and pulling the substrate up, so as to coat a surface of a recessed portion of the uneven structure with the supernatant liquid by using a capillary phenomenon, and arrange the nanocrystals along the recessed portions of the uneven structure,
wherein the uneven structure has a line and space structure on which a straight or curved recessed portion is formed, and/or which has dot-shaped recessed portions, and
the shortest width and a depth of the recessed portions are 2.3 μm to 1 mm.

### Claim 2 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein, in the second process, the supernatant liquid is obtained by performing centrifugation on the container.

### Claim 3 (depends on 2)

The method of arranging nanocrystals according to claim 2,
wherein the barium titanate nanocrystals and/or strontium titanate nanocrystals are obtained in a manner in which synthesis is performed in a solution, and then the solution is subjected to centrifugation in a first rotation condition and precipitates are collected, and
a rotation condition when centrifugation is performed on the container in the second process is different from the first rotation condition.

### Claim 4 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein organic carboxylic acid adheres to surfaces of the barium titanate nanocrystals and/or the strontium titanate nanocrystals before being put into the container.

### Claim 5 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein the nonpolar solvent is mesitylene (1,3,5-trimethylbenzene).

### Claim 6 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein a rate of pulling up the substrate is 10 nm/sec to 100 nm/sec.

### Claim 7 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein the uneven structure is formed by a polymer film which is not dissolved in the nonpolar solvent.

### Claim 8 (depends on 1)

A method of arranging nanocrystals, comprising:
further performing the third process once or repeating the third process plural times on a substrate having the uneven structure in which nanocrystals are arranged by the method of arranging nanocrystals according to claim 1.

### Claim 9 (depends on 1)

The method of arranging nanocrystals according to claim 1,
wherein the substrate is selected from the group consisting of FTO, ITO, glass, silicon, metal, ceramics, polymer, paper, rubber, and a low heat-resistant base material, and wherein the uneven structure is formed from polyimide.