# US 10,766,767 B2 · Eutectic bonding with ALGe > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,766,767 B2 - Document ID: US10766767B2 - Status: Granted - Kind: B2 - Application number: 16/407,045 - Filed: 2019-05-08 - Published: 2019-08-29 - Granted: 2020-09-08 - Earliest claimed: 2017-04-04 - Assignees: Kionix, Inc. - Applicants: Kionix, Inc. - Inventors: Martin Heller; Toma Fujita - Web page: https://patentgrep.com/patent/US10766767B2 ## CPC - B81C 1/00269: {Bonding of solid lids or wafers to the substrate} - B32B 15/043: {of metal (B32B15/01 takes precedence)} - B32B 15/20: comprising aluminium or copper {(B32B15/016 and B32B15/017 take precedence)} - B81B 7/0032: {Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023)} - B81C 1/00261: {Processes for packaging MEMS devices (MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023)} - H10W 72/00: Interconnections or connectors in packages - H10W 72/019: {of bond pads} - H10W 72/0198: {batch processes} - H10W 72/90: Bond pads, in general - H10W 76/10: Containers or parts thereof - B81B 2203/0315: Cavities - B81C 2203/0127: Using a carrier for applying a plurality of packaging lids to the system wafer - B81C 2203/019: characterised by the material or arrangement of seals between parts - B81C 2203/035: Soldering - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum. ## Claims ### Claim 1 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming an Aluminum Germanium structure above the first substrate; forming a polysilicon layer above the second substrate; covering the first substrate with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device. ### Claim 2 (depends on 1) The method of claim 1 further comprising: forming an adhesive layer below the Aluminum Germanium structure in the first substrate. ### Claim 3 (depends on 2) The method of claim 2 further comprising: forming an Alumina layer between the Aluminum Germanium structure and the adhesive layer. ### Claim 4 (depends on 2) The method of claim 2 wherein said adhesive layer is a Titanium Nitride layer. ### Claim 5 (depends on 1) The method of claim 1 further comprising: forming an Alumina layer below the Polysilicon layer in the second substrate. ### Claim 6 (depends on 5) The method of claim 5 further comprising: forming an adhesive layer below the Alumina layer in the second substrate. ### Claim 7 (depends on 1) The method of claim 1 wherein said Germanium Aluminum structure comprises a layer of Germanium overlaying a layer of Aluminum. ### Claim 8 (depends on 1) The method of claim 1 further comprising: forming a Polycide layer below the Polysilicon layer in the second substrate. ### Claim 9 (depends on 1) The method of claim 1 wherein said Aluminum Germanium structure comprises a layer of Germanium overlaying a layer of Aluminum, wherein said Aluminum layer comprises Copper atoms. ### Claim 10 (depends on 1) The method of claim 1 wherein said Aluminum Germanium structure comprises a layer of Aluminum and Germanium that are co-deposited. ### Claim 11 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming a Silicide layer either in or above the first substrate; forming an Aluminum Germanium structure above the Silicide layer of the first substrate; forming a Silicide layer either in or above a substrate of the second substrate; covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Silicide layer of the second substrate; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device. ### Claim 12 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming a Silicide layer either in or above the first substrate; forming a Silicide layer either in or above the second substrate; forming an Aluminum Germanium structure above the Silicide layer of the second substrate; covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Silicide layer of the first substrate; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device. ### Claim 13 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming a Silicide layer either in or above a substrate of the first substrate; forming an Aluminum Germanium structure above the Silicide layer of the first substrate; forming a Silicide layer either in or above a substrate of the second substrate; forming an Aluminum Germanium structure above the Silicide layer of the second substrate; covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum Germanium structure of the first substrate; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device. ### Claim 14 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming a Silicide layer either in or above a substrate of the first substrate; forming an Aluminum Germanium structure above the Silicide layer of the first substrate; forming a Silicide layer either in or above a substrate of the second substrate; forming an Aluminum structure above the Silicide layer of the second substrate; covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum structure of the second substrate; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device. ### Claim 15 A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising: forming a Silicide layer either in or above a substrate of the first substrate; forming a Germanium structure above the Silicide layer of the first substrate; forming a Silicide layer either in or above a substrate of the second substrate; forming an Aluminum Germanium structure above the Silicide layer of the second substrate; covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Germanium structure of the first substrate; and performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.