# US 10,766,057 B2 · Components and systems for cleaning a tool for forming a semiconductor device, and related methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,766,057 B2 - Document ID: US10766057B2 - Status: Granted - Kind: B2 - Application number: 15/856,373 - Filed: 2017-12-28 - Published: 2019-07-04 - Granted: 2020-09-08 - Earliest claimed: 2017-12-28 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Ken Tokashiki; Gurtej S. Sandhu - Web page: https://patentgrep.com/patent/US10766057B2 ## CPC - B08B 9/00: Cleaning hollow articles by methods or apparatus specially adapted thereto - B08B 7/0035: {by radiant energy, e.g. UV, laser, light beam or the like} - B08B 7/0071: {by heating (B08B7/0035 takes precedence)} - H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like} - H10P 72/0436: {mainly by radiation} - H10P 72/72: using electrostatic chucks - H10P 72/722: {Details of electrostatic chucks} - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of cleaning a tool for forming a semiconductor device includes heating a wafer comprising a ceramic material to heat at least the ceramic material, positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, and removing the vaporized deposits from the tool. Related methods of forming semiconductor devices, related systems, and related cleaning wafers are disclosed. ## Claims ### Claim 1 A method of cleaning a tool for forming a semiconductor device, the method comprising: heating a wafer comprising a first material comprising a ceramic material and a second material comprising a thermally insulative material having a different composition than the first material, the first material surrounding an outer circumference of the second material; positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, positioning the heated wafer on the electrostatic chuck comprising contacting a major surface of the electrostatic chuck with the second material and with the first material; and removing the vaporized deposits from the tool. ### Claim 2 (depends on 1) The method of claim 1, wherein heating a wafer comprising a second material comprises heating the wafer with a second material having a lower thermal conductivity than the first material, the second material comprising silicon, borophosphosilicate glass, phosphosilicate glass, or borosilicate glass. ### Claim 3 (depends on 1) The method of claim 1, wherein heating a wafer comprising a ceramic material comprises heating a wafer comprising a ceramic material including at least one of aluminum oxide, zirconium oxide, aluminum nitride, boron nitride, and boron carbide. ### Claim 4 (depends on 1) The method of claim 1, wherein heating a wafer comprising a ceramic material comprises heating a wafer comprising a ceramic material exhibiting a specific heat capacity greater than about 400 J/kgK at about 20° C. ### Claim 5 (depends on 1) The method of claim 1, wherein heating a wafer comprising a ceramic material comprises heating the wafer in a heating chamber prior to positioning the heated wafer on the electrostatic chuck of the tool. ### Claim 6 (depends on 1) The method of claim 1, further comprising cooling the second material below about 0° C. after placing the heated wafer on the electrostatic chuck. ### Claim 7 (depends on 1) The method of claim 1, wherein positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits comprises heating one or more ammonium salts located proximate the heated wafer in a pocket region defined by a space between the heated wafer, an edge ring, and an insulative material proximate a periphery of the heated wafer. ### Claim 8 (depends on 1) The method of claim 1, wherein heating a wafer comprises heating the ceramic material to a temperature greater than about 300° C. ### Claim 9 (depends on 1) The method of claim 1, wherein positioning the heated wafer on an electrostatic chuck comprises transporting the heated wafer from a heating chamber to the tool at a pressure below about 1.0 mmHg. ### Claim 10 (depends on 1) The method of claim 1, further comprising exposing the tool to a plasma while the heated wafer is on the electrostatic chuck. ### Claim 11 (depends on 1) The method of claim 1, wherein positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits comprises heating the deposits to at least about 300° C. ### Claim 12 (depends on 1) The method of claim 1, wherein heating a wafer comprises heating the wafer external to the tool. ### Claim 13 A system for cleaning a tool for forming a semiconductor device, the system comprising: a wafer comprising a first material exhibiting a specific heat capacity greater than about 400 J/kgK at about 20° C. and a second material comprising a thermally insulative material, the first material surrounding an entire circumference of the second material and directly overlying and contacting an upper surface of the second material; a heating chamber configured to heat the wafer; and a tool comprising: an electrostatic chuck configured to receive the wafer; an edge ring disposed around a portion of the electrostatic chuck; and a pocket region between the edge ring and the electrostatic chuck, the wafer elevated relative to the edge ring, the pocket region at least partially defined by a space between the wafer and the edge ring, wherein a lower surface of the second material directly contacts the electrostatic chuck, the first material not contacting the electrostatic chuck. ### Claim 14 (depends on 13) The system of claim 13, wherein the second material comprises silicon dioxide or silicon nitride. ### Claim 15 (depends on 13) The system of claim 13, wherein the first material comprises at least one of aluminum oxide, zirconium oxide, aluminum nitride, boron nitride, and boron carbide. ### Claim 16 (depends on 13) The system of claim 13, wherein the first material is configured to overlie the pocket region. ### Claim 17 (depends on 13) The system of claim 13, wherein the heating chamber comprises a plasma chamber configured to heat the first material without substantially heating a thermally insulative material surrounded by the first material. ### Claim 18 (depends on 13) The system of claim 13, wherein the heating chamber comprises a heat lamp configured to heat the first material. ### Claim 19 (depends on 13) The system of claim 13, further comprising a chiller configured to cool the electrostatic chuck when the wafer is disposed on the electrostatic chuck. ### Claim 20 A method of forming a semiconductor device, the method comprising: patterning a semiconductor wafer in a chamber of a tool; removing the semiconductor wafer from the tool; heating a cleaning wafer comprising a first material having a specific heat capacity greater than about 400 J/kg·K at about 20° C. and a second material comprising a thermally insulative material having a lower thermal conductivity than the first material, the first material surrounding only a circumference of the second material; disposing the heated cleaning wafer on an electrostatic chuck of the tool, the first material proximate deposits located in a pocket region of the tool defined between the electrostatic chuck and an edge ring such that the deposits proximate the first material are heated, disposing the heated cleaning wafer on the electrostatic chuck comprising contacting a central portion of the electrostatic chuck with the second material and an outer portion of the electrostatic chuck with the first material; and removing the deposits from the tool. ### Claim 21 (depends on 20) The method of claim 20, wherein removing the deposits from the tool comprises exposing the chamber to a cleaning plasma comprising at least one of oxygen, argon, nitrogen, hydrogen, helium, chlorine, a fluorocarbon, and sulfur hexafluoride. ### Claim 22 (depends on 20) The method of claim 20, wherein removing the deposits from the tool comprises heating the deposits while maintaining a pressure of the chamber below about 1.0 mmHg. ### Claim 23 (depends on 20) The method of claim 20, further comprising cooling the electrostatic chuck simultaneously with heating the deposits proximate the first material. ### Claim 24 A cleaning wafer for cleaning a tool used for fabricating a semiconductor device, the cleaning wafer comprising: a thermally insulative material; and a high specific heat capacity material selected from the group consisting of boron nitride, boron carbide, aluminum carbide, tungsten nitride, beryllium oxide, polyimide, graphite, and graphene surrounding at least a portion of the thermally insulative material and configured to be disposed on an electrostatic chuck of a tool used for fabricating a semiconductor device, the high specific heat capacity material configured to overlie a pocket defined between the electrostatic chuck and an edge ring of the tool. ### Claim 25 (depends on 24) The cleaning wafer of claim 24, wherein the high specific heat capacity material comprises boron nitride, boron carbide, or a combination thereof. ### Claim 26 (depends on 24) The cleaning wafer of claim 24, wherein the high specific heat capacity material comprises a ring-shape disposed around a circumference of the thermally insulative material. ### Claim 27 (depends on 24) The cleaning wafer of claim 24, further comprising another material comprising silicon dioxide radially between the thermally insulative material and the high specific heat capacity material.