Fabrication method of substrate structure
AssigneeSiliconware Precision Industries Co., Ltd.
InventorsJin-Wei You, Chun-Lung Chen
Life of this patent
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Abstract
A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.
Claims9
A method for fabricating a substrate structure, comprising the steps of:
- disposing at least a strengthening member on a carrier and forming a first circuit layer on the carrier;
- forming a dielectric layer on the carrier, the strengthening member and the first circuit layer, wherein the strengthening member is partially embedded in the dielectric layer;
- forming a second circuit layer on the dielectric layer, wherein the second circuit layer is electrically connected to the first circuit layer;
- removing the carrier to expose the first circuit layer and the strengthening member, wherein the strengthening member partially protrudes from the dielectric layer;
- and
- forming an insulating layer on the dielectric layer, the strengthening member, the first circuit layer and the second circuit layer, wherein the insulating layer has a plurality of openings exposing portions of the first circuit layer and the second circuit layer, and wherein the strengthening member is partially embedded in the insulating layer so that the strengthening member extends from the dielectric layer to the insulating layer.
Dependencies are inferred from the claim text.