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US 10,763,867 B1Granted
Method of forming a semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorMasayuki Kanematsu
Life of this patent
Estimating the term…
Abstract
In one embodiment, a filter circuit is formed to include a transconductance amplifier. The filter circuit has one pair of capacitors connected between at least one input of the amplifier and an input signal that is to be filtered.
Claims20
A differential filter circuit comprising:
- a first transconductance amplifier having a positive input connected to a negative output of the first transconductance amplifier and also coupled to a first node, the first transconductance amplifier having a negative input connected to a positive output of the first transconductance amplifier and also coupled to a second node;
- a first capacitor coupled between the first node and a first input that is configured to receive a first input signal;
- a second capacitor coupled between the first node and a second input that is configured to receive a second input signal;
- a third capacitor coupled between the second node and the first input;
- a fourth capacitor coupled between the second node and the second input;
- and
- a second transconductance amplifier having a positive input connected to the negative output of the first transconductance amplifier, and having a negative input connected to the positive output of the first transconductance amplifier, the second transconductance amplifier having a negative output connected to the first capacitor and to the third capacitor, and having a positive output connected to the second capacitor and to the fourth capacitor.
4 more elements
A filter circuit comprising:
- a first capacitor coupled between a first node and a first input that is configured to receive a first input signal, the first capacitor having a first value;
- a second capacitor coupled between the first node and a second input that is configured to receive a second signal the second capacitor having a second value that is different from the first value;
- a first transconductance amplifier having a positive input connected to the first node and to a negative output of the first transconductance amplifier;
- and
- a second transconductance amplifier having a positive input commonly connected to the negative output of the first transconductance amplifier, to the positive input of the first transconductance amplifier, and to the first node, the second transconductance amplifier having a negative input commonly connected to a negative input of the first transconductance amplifier, wherein a first transconductance of the first transconductance amplifier is less than a second transconductance of the second transconductance amplifier.
2 more elements
A method of forming a semiconductor device comprising:
- forming a first input of a first transconductance amplifier commonly coupled to a first capacitor and a second capacitor at a first node wherein the first capacitor is coupled to receive a first signal and the second capacitor is coupled to receive a second signal and wherein the first capacitor has a value that is different from a value of the second capacitor;
- and
- forming a first input of a second transconductance amplifier commonly coupled to the first input of the first transconductance amplifier and to a first output of the first transconductance amplifier.
Dependencies are inferred from the claim text.