US 10,763,851 B2Granted

Gate control circuit and transistor drive circuit

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorYukio Tsunetsugu

Life of this patent

Estimating the term…

Loading patent…

Abstract

A gate control circuit has a first gate controller that controls a gate voltage of a first transistor connected between a first reference voltage node and an output node on the basis of a potential difference between the first reference voltage node and a second reference voltage node, a second gate controller that controls a gate voltage of a second transistor connected between the output node and a fourth reference voltage node. and a voltage adjustment circuit that temporarily increases the potential difference between the first reference voltage node and the second reference voltage node in a first period in which the voltage of the first reference voltage node is rising from an initial voltage and a second period in which the voltage of the first reference voltage node is falling from a normal voltage.

Claims20

Dependent claims

A gate control circuit comprising:

a first gate controller that controls a gate voltage of a first transistor connected between a first reference voltage node and an output node on the basis of a potential difference between the first reference voltage node and a second reference voltage node having a voltage lower than a voltage of the first reference voltage node;
a second gate controller that controls a gate voltage of a second transistor connected between the output node and a fourth reference voltage node on the basis of a potential difference between a third reference voltage node having a voltage lower than the voltage of the first reference voltage node and the fourth reference voltage node having a voltage lower than the voltage of the third reference voltage node;
and
a voltage adjustment circuit that temporarily increases the potential difference between the first reference voltage node and the second reference voltage node in a first period in which the voltage of the first reference voltage node is rising from an initial voltage and a second period in which the voltage of the first reference voltage node is falling from a normal voltage.

1 more element

A transistor drive circuit comprising:

a first transistor that is connected between a first reference voltage node and an output node;
a first gate controller that controls a gate voltage of the first transistor on the basis of a potential difference between the first reference voltage node and a second reference voltage node having a voltage lower than a voltage of the first reference voltage node;
a second transistor that is connected between the output node and a fourth reference voltage node having a voltage lower than a voltage of a third reference voltage node;
a second gate controller that controls a gate voltage of the second transistor on the basis of a potential difference between the third reference voltage node having a voltage lower than the voltage of the first reference voltage node and the fourth reference voltage node having a voltage lower than the voltage of the third reference voltage node;
and
a voltage adjustment circuit that temporarily increases the potential difference between the first reference voltage node and the second reference voltage node in a first period in which the voltage of the first reference voltage node is rising and a second period in which the voltage of the first reference voltage node is falling.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/559,106Filed 3 Sep 2019
Priority: JP 2019-0002834 Jan 2019
Published: US 2020/0220539 A19 Jul 2020
Granted: 1 Sep 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H03K 17/567
By the use, as active elements, of semiconductor devices: circuits characterised by the use of more than one type of semiconductor device, e.g.…
H03K 17/60
By the use, as active elements, of semiconductor devices: the devices being bipolar transistors
H03K 17/6872
The output circuit comprising more than one controlled field-effect transistor: using complementary field-effect transistors
H03K 17/6877
The devices being field-effect transistors: the control circuit comprising active elements different from those used in the output circuit