Main-auxiliary field-effect transistor configurations with interior parallel transistors

A radio-frequency (RF) module comprising:

• a packaging substrate configured to receive a plurality of devices;
• and
• a circuit assembly mounted on the packaging substrate, the circuit assembly including a branch including a main path in parallel with an auxiliary path, the main path including a plurality of main field-effect transistors (FETs) connected in series with an input FET having a source node coupled to an input signal node, an output FET having a drain node coupled to an output signal node, and an interior FET having a source node coupled to a drain node of the input FET and a drain node coupled to a source node of the output FET, the auxiliary path including an auxiliary FET that is coupled in parallel with the interior FET such that the auxiliary FET has a source node coupled to the source node of the interior FET and a drain node coupled to the drain node of the interior FET;
• the circuit assembly also including a gate bias network connected to one or more of the plurality of main FETs;
• and the circuit assembly also including an auxiliary bias network connected to the auxiliary FET.

A wireless device comprising:

• a transceiver configured to process radio-frequency (RF) signals;
• an RF module in communication with the transceiver, the RF module including a circuit assembly including a branch including a main path in parallel with an auxiliary path, the main path including a plurality of main field-effect transistors (FETs) connected in series with an input FET having a source node coupled to an input signal node, an output FET having a drain node coupled to an output signal node, and an interior FET having a source node coupled to a drain node of the input FET and a drain node coupled to a source node of the output FET, the auxiliary path including an auxiliary FET that is coupled in parallel with the interior FET such that the auxiliary FET has a source node coupled to the source node of the interior FET and a drain node coupled to the drain node of the interior FET;
• the circuit assembly also including a gate bias network connected to one or more of the plurality of main FETs;
• and the circuit assembly also including an auxiliary bias network connected to the auxiliary FET;
• and
• an antenna in communication with the RF module, the antenna configured to facilitate transmitting and/or receiving of the RF signals.