Semiconductor device
AssigneeHitachi Automotive Systems, Ltd.
InventorsShinichirou Wada, Masahito Sonehara
Life of this patent
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Abstract
A semiconductor device capable of enhancing uniformity of temperatures of transistors in an active clamp state while maintaining current performance is provided. A power transistor is connected to a power transistor in parallel. An active clamp circuit is provided in a path from a connection point between the power transistors to a gate of the power transistor and is conducted in a case where a voltage of the connection point exceeds a first threshold. An active clamp cutoff circuit is provided in a path from the active clamp circuit to a gate of the power transistor and cuts off or suppresses a current flowing into the path.
Claims11
A semiconductor device comprising:
- a first transistor including a first control electrode;
- a second transistor connected to the first transistor in parallel and including a second control electrode;
- an active clamp circuit configured to be provided in a first path from a first connection point between the first transistor and the second transistor to the first control electrode and to be conducted in a case where a voltage of the first connection point exceeds a first threshold;
- and
- an active clamp cutoff circuit configured to be provided in a second path from the active clamp circuit to the second control electrode and to cut off or suppress a current flowing into the second path, wherein
- the first control electrode and the second control electrode are gates.
Dependencies are inferred from the claim text.