# US 10,763,818 B2 · Acoustic wave device

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- Number: US 10,763,818 B2
- Document ID: US10763818B2
- Status: Granted
- Kind: B2
- Application number: 15/694,069
- Filed: 2017-09-01
- Published: 2018-03-22
- Granted: 2020-09-01
- Earliest claimed: 2016-09-21
- Assignees: Taiyo Yuden Co., Ltd.
- Applicants: Taiyo Yuden Co., Ltd.
- Inventors: Takeshi Sakashita; Jun Tsutsumi
- Web page: https://patentgrep.com/patent/US10763818B2

## CPC

- H03H 9/02937: {of chemical damage, e.g. corrosion}
- H03H 3/08: for the manufacture of resonators or networks using surface acoustic waves
- H03H 3/10: for obtaining desired frequency or temperature coefficient
- H03H 9/02559: {of lithium niobate or lithium-tantalate substrates}
- H03H 9/02779: {Continuous surface reflective arrays}
- H03H 9/02834: {of temperature influence (cut angles H03H9/02543)}
- H03H 9/145: for networks using surface acoustic waves
- H03H 9/25: Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)}
- H03H 9/6483: {Ladder SAW filters}
- H10N 30/8542: {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates}
- H10N 30/875: {Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins}
- H10N 30/877: {Conductive materials}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode located on the piezoelectric substrate; a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode; a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode; a second insulating film covering an upper surface of the first insulating film and at least a part of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and a pad being in contact with the wiring layer exposed by the aperture.

## Claims

### Claim 1

An acoustic wave device comprising:
a piezoelectric substrate;
a comb-shaped electrode located on the piezoelectric substrate;
a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode;
a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode;
a second insulating film covering an upper surface of the first insulating film and an entirety of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and
a pad being in contact with the wiring layer exposed by the aperture and covering at least a part of a portion of the second insulating film that covers the entirety of the side surface of the first insulating film in the aperture.

### Claim 2 (depends on 1)

The acoustic wave device according to claim 1, wherein the pad covers an entirety of the portion of the second insulating film that covers the entirety of the side surface of the first insulating film.

### Claim 3 (depends on 1)

The acoustic wave device according to claim 1, wherein the second insulating film has a higher density than the first insulating film.

### Claim 4 (depends on 1)

The acoustic wave device according to claim 1, wherein
the first insulating film is a silicon oxide film or a silicon oxide film to which another element is added, and
the second insulating film is an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, or a diamond-like carbon film.

### Claim 5 (depends on 1)

The acoustic wave device according to claim 1, wherein the pad includes a gold layer.

### Claim 6 (depends on 4)

The acoustic wave device according to claim 4, wherein the another element is fluorine.

### Claim 7

An acoustic wave device comprising:
piezoelectric substrate;
a comb-shaped electrode located on the piezoelectric substrate;
a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode;
a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode;
a second insulating film covering an upper surface of the first insulating film and at least a part of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and
a pad being in contact with the wiring layer exposed by the aperture,
wherein a width of a part being in contact with the wiring layer of the second insulating film is greater than a thickness of the second insulating film located on an upper part of the side surface of the first insulating film.

### Claim 8 (depends on 7)

The acoustic wave device according to claim 7, wherein the pad covers an entirety of the portion covering the side surface of the first insulating film of the second insulating film.

### Claim 9 (depends on 7)

The acoustic wave device according to claim 7, wherein the second insulating film has a higher density than the first insulating film.

### Claim 10 (depends on 7)

The acoustic wave device according to claim 7, wherein:
the first insulating film is a silicon oxide film or a silicon oxide film to which another element is added, and
the second insulating film is an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, or a diamond-like carbon film.

### Claim 11 (depends on 7)

The acoustic wave device according to claim 7, wherein the pad includes a gold layer.

### Claim 12 (depends on 10)

The acoustic wave device according to claim 10, wherein the another element is fluorine.

### Claim 13

An acoustic wave device comprising:
a piezoelectric substrate;
a comb-shaped electrode located on the piezoelectric substrate;
a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode;
a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode;
a second insulating film covering an upper surface of the first insulating film and a part of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and
a pad being in contact with the wiring layer exposed by the aperture, covering at least a part of a portion of the second insulating film that covers the part of the side surface of the first insulating film in the aperture and covering another part of the side surface of the first insulating film that is not covered by the second insulating film.

### Claim 14 (depends on 13)

The acoustic wave device according to claim 13, wherein the pad covers an entirety of the portion of the second insulating film that covers the part of the side surface of the first insulating film.

### Claim 15 (depends on 13)

The acoustic wave device according to claim 13, wherein the second insulating film has a higher density than the first insulating film.

### Claim 16 (depends on 13)

The acoustic wave device according to claim 13, wherein:
the first insulating film is a silicon oxide film or a silicon oxide film to which another element is added, and
the second insulating film is an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, or a diamond-like carbon film.

### Claim 17 (depends on 13)

The acoustic wave device according to claim 13, wherein the pad includes a gold layer.

### Claim 18 (depends on 16)

The acoustic wave device according to claim 16, wherein the another element is fluorine.
