Piezoelectric layer and piezoelectric device comprising the piezoelectric layer
AssigneeAvago Technologies International Sales Pte. Limited
InventorsTakahiko Yanagitani, Masashi Suzuki
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Abstract
A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.
Claims20
A piezoelectric layer comprising:
- aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%.
A bulk acoustic wave (BAW) resonator, comprising:
- a substrate;
- a first electrode disposed over the substrate;
- a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN is greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%;
- and
- a second electrode disposed over the piezoelectric layer.
A surface acoustic wave (SAW) resonator, comprising:
- a piezoelectric layer comprising aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%;
- and
- a pair of interdigitated comb electrodes disposed over the piezoelectric layer.
Dependencies are inferred from the claim text.