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US 10,763,800 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeMagnaChip Semiconductor, Ltd.
InventorsHee Hwan Ji, Tae Ho Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate comprising a WELL region, a gate electrode comprising a gate length disposed on the WELL region, and first and second drift regions which overlap with the gate electrode. The first and second draft regions may overlap with the gate electrode at an overlapping length which is a percentage of the gate length.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a WELL region in a substrate;
- implanting conductive-type dopants in the WELL region to form a first drift region and a second drift region;
- forming a gate on the WELL region, the first drift region and the second drift region;
- forming a sidewall spacer adjacent to the gate;
- and
- forming a source region to extend from a boundary of the sidewall spacer,
- wherein a mask for forming the first drift region and the second drift region surrounds a mask for forming an active region, and the source region and a drain region are formed in the active region.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a WELL region in a substrate;
- implanting conductive-type dopants in the WELL region to form a first drift region and a second drift region;
- forming a gate on the WELL region, the first drift region and the second drift region;
- forming a sidewall spacer adjacent to the gate;
- and
- forming a source region to extend from a boundary of the sidewall spacer, wherein, in a top view of the substrate, a mask for forming the first drift region and the second drift region has a maximum vertical length greater than a maximum vertical length of a mask for forming the gate.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a WELL region in a substrate;
- implanting conductive-type dopants in the WELL region to form a drift region;
- forming a gate on the WELL region;
- forming a sidewall spacer adjacent to the gate;
- and
- forming a first region in the WELL region to extend from a boundary of the sidewall spacer;
- wherein the drift region partially encloses the first region, completely overlaps an entire length of the sidewall spacer, and partially overlaps a length of the gate,
- wherein a mask for forming the drift region surrounds a mask for forming an active region, and the first region is formed in the active region.
5 more elements
Dependencies are inferred from the claim text.