Multiple-stage power amplifiers implemented with multiple semiconductor technologies

A multiple-stage amplifier comprising:

• a first die that includes a first type of semiconductor substrate, a first radio frequency, RF, signal input terminal, a first RF signal output terminal, and a first amplification path between the first RF signal input terminal and the first RF signal output terminal, wherein the first amplification path includes a first transistor, wherein the first transistor has a control terminal and a current-carrying terminal, the control terminal of the first transistor is electrically coupled to the first RF signal input terminal, and the current-carrying terminal of the first transistor is electrically coupled to the first RF signal output terminal;
• a second die that is distinct from the first die and that includes a second type of semiconductor substrate that is different from the first type of semiconductor substrate, wherein the second type of semiconductor substrate is a III-V semiconductor substrate, and wherein the second die also includes a second RF signal input terminal, a second RF signal output terminal, and a second transistor, wherein the second transistor has a control terminal electrically coupled to the second RF signal input terminal, and a current-carrying terminal electrically coupled to the second RF signal output terminal;
• a substrate to which bottom surfaces of the first and second die are connected;
• and
• an interstage impedance matching circuit electrically coupled between the current-carrying terminal of the first transistor and the control terminal of the second transistor, wherein the interstage impedance matching circuit includes an integrated portion that is integrated with the first die and electrically coupled between the current-carrying terminal of the first transistor and the first RF signal output terminal, and an inductance which comprises a wire bond array consisting of a plurality of wirebonds electrically coupled between the first RF signal output terminal and the second RF signal input terminal, wherein each wirebond of the plurality of wirebonds has a first end connected to the first RF signal output terminal of the first die, and a second end connected to the second RF signal input terminal of the III-V die.