Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

A method for fabricating an electro-optical device, the method comprising:

• forming a pair of structured doped layers of III-V semiconductor materials on a slab, the pair of structured doped layers are arranged side-by-side in the slab, the pair of structure doped layers comprising an n-doped layer and a p-doped layer, wherein each of the p-doped layer and the n-doped layer comprises a two-dimensional photonic crystal, the n-doped layer is further structured to form an output waveguide core comprising a tapered portion protruding from an edge of the n-doped layer and extending parallel to an extraction portion of the output waveguide core formed as a line defect in a lattice of holes of the n-doped layer, wherein one or more rows of holes in the lattice of holes are missing at a level of the line defect;
• and
• forming a separation section extending between the pair of structured doped layers, the separation section separates the pair of structured doped layers, wherein the separation section comprises:
• current blocking trenches, and
• an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.