US 10,763,451 B2 · Display device

Abstract

A display device including a substrate, a first transistor, a second transistor, and a first capacitor electrode is provided. The first transistor is disposed above the substrate and includes a first semiconductor layer, a first gate electrode, and a first gate insulator layer. The first semiconductor layer includes a silicon semiconductor layer. The first gate electrode overlaps the first semiconductor layer. The first gate insulator layer is disposed between the first semiconductor layer and the first gate electrode. The second transistor is disposed above the substrate and includes a second semiconductor layer and a second gate electrode. The second semiconductor layer includes an oxide semiconductor layer. The second gate electrode overlaps the second semiconductor layer. The first capacitor electrode overlaps the second gate electrode. The first gate insulator is disposed above the first capacitor electrode.

Claims19

Dependent claims

A display device, comprising:

a substrate having a surface;
a first transistor disposed above the surface of the substrate and comprising:
a first semiconductor layer comprising a silicon semiconductor layer;
a first gate electrode overlapping the first semiconductor layer;
and
a first gate insulator layer disposed between the first semiconductor layer and the first gate electrode;
a second transistor disposed above the surface of the substrate and comprising:
a second semiconductor layer comprising an oxide semiconductor layer;
and
a second gate electrode overlapping the second semiconductor layer in view of a normal direction of the surface;
and
a first capacitor electrode overlapping the second gate electrode in view of the normal direction of the surface,
wherein the first gate insulator layer is disposed above the first capacitor electrode.

10 more elements

Dependencies are inferred from the claim text.

Display device

Life of this patent

Display device

Life of this patent

Abstract

Claims19