Asymmetric correlated electron switch operation

A method comprising:

• applying a first programming signal to first and second terminals of a correlated electron switch (CES) device to meet a first voltage condition or a first current condition, or a combination thereof, for placement of the CES device in a first impedance state, wherein the CES device comprises one or more layers of a correlated electron material (CEM) disposed between the first and second terminals;
• applying a second programming signal to first and second terminals of the CES device to place the CES device in a second impedance state;
• and
• applying a third programming signal to first and second terminals of the CES device to meet a second voltage condition or a second current condition, or a combination thereof, for placement of the CES device in the first impedance state,
• wherein a polarity of the first voltage condition is opposite a polarity of the second voltage condition, and a polarity of the first current condition is opposite a polarity of the second current condition, and
• wherein a difference in a magnitude of the first voltage condition and a magnitude of the second voltage condition or a difference in a magnitude of the first current condition and a magnitude of the second current condition, or any combination thereof, is responsive at least in part to a non-uniform application of a dopant to the one or more layers of the CEM disposed between the first and second terminals.